Amkor Technology Singapore Holding Pte. Ltd.

Amkor Technology, Inc.

Kookmin University

Min Hwa Chang

Dong Hyun Kim

Won Chul Do

Young Rae Kim

Jae Yun Kim

Gi Tae Lim

Seok Geun Ahn

Ah Ra Jo

Won Bae Bang

Dong Joo Park

Jin Young Khim

Min Kyun Yoo

Shaun Bowers

Jae Hun Bae

Gyu Wan Han

Se Hwan Hong

Myung Jea Choi

Byoung Woo Cho

Seul Bee Lee

Seung Jae Yu

Ji Hun Lee

Ju Hyung Lee

Wang Gu Lee

Mi Kyeong Choi

Jin Ryang Hwang

Kyung Rok Park

SAng Hyeon Kang

Eun Jong Lee

Ju Young Lee

Youn Soo Kim

Mi Kyoung Choi

Sang Goo Kang

Myung Jae Choi

Jin Yeol Kim

Hyun Ah Cho

A semiconductor device includes a low-density substrate, a high-density patch positioned inside a cavity in the low-density substrate, a first semiconductor die, and a second semiconductor die. The first semiconductor dies includes high-density bumps and low-density bumps. The second semiconductor die includes high-density bumps and low-density bumps. The high-density bumps of the first semiconductor die and the high-density bumps of the second semiconductor die are electrically connected to the high-density patch. The low-density bumps of the first semiconductor die and the low-density bumps of the second semiconductor die are electrically connected to the low-density substrate.

Semiconductor device and manufacturing method thereof

In one example, a semiconductor structure comprises a frontside substrate comprising a conductive structure, a backside substrate comprising a base substrate and a cavity substrate contacting the base substrate, wherein the backside substrate is over a top side of the frontside substrate and has a cavity and an internal interconnect contacting the frontside substrate, and a first electronic component over the top side of the frontside substrate and in the cavity. The first electronic component is coupled with the conductive structure, and an encapsulant is in the cavity and on the top side of the frontside substrate, contacting a lateral side of the first electronic component, a lateral side of the cavity, and a lateral side of the internal interconnect. Other examples and related methods are also disclosed herein.

Semiconductor device and method of manufacturing semiconductor device

In one example, a semiconductor device can comprise a substrate, a device stack, first and second internal interconnects, and an encapsulant. The substrate can comprise a first and second substrate sides opposite each other, a substrate outer sidewall between the first substrate side and the second substrate side, and a substrate inner sidewall defining a cavity between the first substrate side and the second substrate side. The device stack can be in the cavity and can comprise a first electronic device, and a second electronic device stacked on the first electronic device. The first internal interconnect can be coupled to the substrate and the device stack. The encapsulant can cover the substrate inner sidewall and the device stack and can fill the cavity. Other examples and related methods are disclosed herein.

Semiconductor devices and related methods

In one example, a semiconductor device can comprise a substrate, a device stack, first and second internal interconnects, and an encapsulant. The substrate can comprise a first and second substrate sides opposite each other, a substrate outer sidewall between the first substrate side and the second substrate side, and a substrate inner sidewall defining a cavity between the first substrate side and the second substrate side. The device stack can be in the cavity and can comprise a first electronic device, and a second electronic device stacked on the first electronic device. The first internal interconnect can be coupled to the substrate and the device stack. The second internal interconnect can be coupled to the second electronic device and the first electronic device. The encapsulant can cover the substrate inner sidewall and the device stack, and can fill the cavity. Other examples and related methods are disclosed herein.

Semiconductor device

A semiconductor package and a manufacturing method thereof, which can reduce the size of the semiconductor package and improve product reliability. In a non-limiting example embodiment, the method may comprise forming an interposer on a wafer, forming at least one reinforcement member on the interposer, coupling and electrically connecting at least one semiconductor die to the interposer to the interposer, filling a region between the semiconductor die and the interposer with an underfill, and encapsulating the reinforcement member, the semiconductor die and the underfill on the interposer using an encapsulant.

Disclosed herein is a method for preparing ultrathin silver nanowires. It may comprise (a) dissolving a silver salt (Ag salt) and a capping agent in a reducing solvent to give a mixture solution; (b) adding a halide compound to the mixture solution to yield a silver seed; (c) heating the mixture solution and then allowing the heated mixture solution to grow ultrathin silver nanowires from the silver seed under a pressure in an inert gas atmosphere; and (d) cooling the mixture solution in which the ultrathin silver nanowires have grown, followed by purification and separation to obtain the ultrathin silver nanowires. The silver nanowires are restrained from growing in thickness under a certain pressure, so that they are 30 nm or less in thickness and have a narrow diameter distribution, which leads to an improvement in aspect ratio.

Method for preparing ultrathin silver nanowires, and transparent conductive electrode film product thereof

Growing community of inventors

Seoul, South Korea

Min Hwa Chang