United Microelectronics Corp.

Asia Optical Co., Ltd.

Min-Hung Wang

Yu-Chih Chuang

Tsong-Lin Shen

Sheng-Wei Hung

Chin-Tsai Chang

Chien-Chung Su

Chih-Cheng Wang

Akira Mao

A method for fabricating a semiconductor device is disclosed. A semiconductor substrate comprising a MOS transistor is provided. A MEMS device is formed over the MOS transistor. The MEMS device includes a bottom electrode in a second topmost metal layer, a diaphragm in a pad metal layer, and a cavity between the bottom electrode and the diaphragm.

Method for fabricating MEMS device integrated with a semiconductor integrated circuit

A semiconductor device includes a semiconductor substrate comprising a MOS transistor. A MEMS device is integrally constructed above the MOS transistor. The MEMS device includes a bottom electrode in a second topmost metal layer, a diaphragm in a pad metal layer, and a cavity between the bottom electrode and the diaphragm.

MEMS device integrated with a semiconductor integrated circuit and manufacturing method thereof

An aiming device is provided. The aiming device includes an erector tube assembly, a moving plate and a crosshair. The moving plate, disposed on the erector tube assembly, is movable along a direction. The crosshair is disposed on the moving plate. When the moving plate moves, the crosshair moves with the moving plate along the direction.

Aiming device

A fabrication of a damascene structure is described. A substrate having a first conductive layer formed thereon is provided. A silicon nitride type of first dielectric layer is formed on the substrate, followed by patterning the first dielectric layer to form a trench like structure. A silicon oxide type of second dielectric layer is then formed on the first dielectric layer and in the trench like structure and an air-gap is concurrently formed in the second dielectric layer that is in the trench like structure. Thereafter, the second dielectric layer is planarized until a surface of the first dielectric layer is exposed. The first dielectric layer is then removed to form a trench, followed by filling the trench with a second conductive layer.

Growing community of inventors

Taichung, Taiwan

Min-Hung Wang