Taiwan Semiconductor Manufacturing Comp. Ltd.

Min-Hung Cheng

Hua-Tai Lin

Cheng-Cheng Kuo

Jeng-Shiun Ho

Kuei-Shun Chen

Chia-Chu Liu

Tzu-Chun Lo

Ching-Che Tsai

Hsiao-Wei Su

Ru-Gun Liu

Tsai-Sheng Gau

Shang-Yu Huang

Yu-Hsiang Lin

Luke Lo

Wen-Han Chu

Ting-Chun Liu

Jing-Wei Shih

A mask set and method for forming FinFET semiconductor devices provides a complementary set of fin-cut masks that are used in DPT (double patterning technology) to remove fins from non-active areas of a semiconductor device, after the fins are formed. Adjacent fins, or adjacent groups of fins, are removed using pattern features from different ones of the multiple fin-cut masks.

Method for removing semiconductor fins using alternating masks

The present disclosure provides a photomask. The photomask includes a first integrated circuit (IC) feature formed on a substrate; and a second IC feature formed on the substrate and configured proximate to the first IC feature. The first and second IC features define a dense pattern having a first pattern density. The second IC feature is further extended from the dense pattern, forming an isolated pattern having a second pattern density less than the first pattern density. A transition region is defined from the dense pattern to the isolated pattern. The photomask further includes a sub-resolution rod (SRR) formed on the substrate, disposed in the transition region, and connected with the first IC feature.

Sub-resolution rod in the transition region

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Taipei, Taiwan

Min-Hung Cheng