United Microelectronics Corp.

United Semiconductor (xiamen) Co., Ltd.

Min-Hsien Chen

Chun-Hsien Lin

Chin-Fu Lin

Chi-Mao Hsu

Hsin-Fu Huang

Chien-Hao Chen

Min-Chuan Tsai

Wei-Yu Chen

Jing-Gang Li

Jian-Hong Su

Wen Yi Tan

Jianhua Chen

Xijun Guo

Xianlei Zhang

Ching-Ning Yang

Haipeng Zhu

A method for depositing a metal layer on a wafer is disclosed. A PVD chamber is provide having therein a wafer chuck for holding a wafer to be processed, a target situated above the wafer chuck, a magnet positioned on a backside of the target, and a DC power supply for supplying a DC voltage to the target. The target is a metal or a metal alloy having ferromagnetism property. A paste process is performed to the PVD chamber. The paste process includes sequential steps of: admitting a working gas into the PVD chamber; and igniting the working gas in cascade stages. The wafer is then loaded into the PVD chamber and positioned onto the wafer chuck. A deposition process is then performed to deposit a metal layer sputtered from the target onto the wafer.

Method for depositing a metal layer on a wafer

A method of forming a semiconductor device is disclosed. A substrate having a dielectric layer thereon is provided. The dielectric layer has a gate trench therein and a gate dielectric layer is formed on a bottom of the gate trench. A work function metal layer and a top barrier layer are sequentially formed in the gate trench. A treatment is performed to the top barrier layer so as to form a silicon-containing top barrier layer. A low-resistivity metal layer is formed in the gate trench.

Method of forming a semiconductor structure

A method for filling a trench with a metal layer is disclosed. A deposition apparatus having a plurality of supporting pins is provided. A substrate and a dielectric layer disposed thereon are provided. The dielectric layer has a trench. A first deposition process is performed immediately after the substrate is placed on the supporting pins to form a metal layer in the trench, wherein during the first deposition process a temperature of the substrate is gradually increased to reach a predetermined temperature. When the temperature of the substrate reaches the predetermined temperature, a second deposition process is performed to completely fill the trench with the metal layer. The present invention further provides a semiconductor device having an aluminum layer with a reflectivity greater than 1, wherein the semiconductor device is formed by using the method.

Method for filling trench with metal layer and semiconductor structure formed by using the same

Semiconductor structure and method of forming the same

Semiconductor structure having aluminum layer with high reflectivity

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Taichung, Taiwan

Min-Hsien Chen