Samsung Electronics Co., Ltd.

Samsung Display Co., Ltd.

Min-Ho Yoon

Jong-Seong Kim

Nam-Seok Roh

Woo-Jae Lee

Sang-Il Kim

Seung-Hwan Cho

Jung-Han Shin

Jung-Hun Noh

Seon-Pil Jang

Seung-Jae Lee

Bo-Sung Kim

Hye Jin Kim

Keun-Kyu Song

Tae-Young Choi

Jong Hwan Lee

Dong Hyun Yu

Young Sik Yoon

Seung-Ju Lee

Suk Heung Oh

Jin Ju Yu

Young Tak Song

Tae Jin Kang

Seok-Joon Hong

Kyu-Young Kim

Yong-Uk Lee

Seong-Sik Shin

Myung-Hwan Kim

Disclosed herein is a novelstrain having cellulose producing activity. Specifically, the present invention relates to a novelstrain producing nano-structured cellulose in a highly efficient manner. The cellulose produced by the strain, due to its superb thermodynamic properties, can be characterized as nano-structured bacterial cellulose and therefore utilized as a bio-nano-fiber. Particularly, the cellulose can be impregnated with a resin to form a cellulose-based resin which can be effectively adapted for a substrate for a liquid crystal display (LCD).

Gluconacetobacter strain having cellulose producing activity

A polarizer includes a polarizer main body, a first barrier layer disposed above the polarizer main body and/or a second barrier layer disposed below the polarizer main body. The first barrier layer and the second barrier layer include silicon nitride (SiNx).

Polarizer and liquid crystal display device having the same

A display device is provided that improves product yield thereof. The display device according to the present invention includes: an insulation substrate; a plurality of gate pad metal layers disposed in a first direction on the substrate; a plurality of data pad metal layers disposed in a second direction on the substrate; a gate fanout unit connecting the gate pad metal layers and gate lines of a display area; a data fanout unit connecting the data pad metal layers and data lines of the display area; and a first insulating layer pattern on the gate pad metal layers, the data pad metal layers, the gate fanout unit, and the data fanout unit, wherein the first insulating layer pattern is partially removed on at least a portion of a region between two neighboring gate pad metal layers, or two neighboring data pad metal layers, thereby forming a first opening.

Display apparatus

A manufacturing method for a thin film transistor array panel including forming a gate electrode, forming an insulating layer on the gate electrode, sequentially forming a lower conducting layer and a upper conducting layer on the insulating layer, etching the upper conducting layer to form a first source electrode and a first drain electrode, etching the lower conducting layer to form the second source electrode and the second drain electrode, over-etching the second source electrode and the second drain electrode, and forming an organic semiconductor between the second source electrode and the second drain electrode.

Thin film transistor array panel and manufacturing method thereof

A method of fabricating a flexible display device. The method includes forming an adhesive layer on a first carrier substrate; laminating a first flexible substrate on the adhesive layer, so that a first separation layer of the first flexible substrate is disposed on the adhesive layer; forming a thin film transistor array on the first flexible substrate; and separating the first carrier substrate from the flexible substrate by directing a laser beam onto the first separation layer. The first separation layer comprises silicon nitride (SiNx) with amounts of nitride A1 and amounts of silicon B1 satisfying 0.18&#x2266;{A1/B1}&#x2266;0.90.

Method of fabricating a flexible display device

In a substrate for a display apparatus, the substrate includes a base substrate and a shielding layer formed on a surface of the base substrate. The shielding layer has an energy bandgap corresponding to a reference wavelength of external light. Thus, the shielding layer blocks light having wavelength equal to or less than the reference wavelength, so that a wavelength band of light may be adjusted.

Substrate and display apparatus having the same

Disclosed are an organic thin film transistor and a method of manufacturing the same. The organic thin film transistor includes a gate electrode, an insulating layer, an organic semiconductor layer, a protective layer, and source and drain electrodes. The insulating layer is on the gate electrode, and the organic semiconductor layer is on the insulating layer. The protective layer is on the organic semiconductor layer, and includes an electrode pattern part to expose the organic semiconductor layer. The source and drain electrodes are in the electrode pattern part and connected to the organic semiconductor layer.

Organic thin film transistor and method of manufacturing the same

An organic thin film transistor substrate includes a substrate, a gate line on a surface of the substrate, a gate insulating layer insulating on the gate line, a data line on the gate insulating layer, an organic thin film transistor connected to the gate line and the data line, the organic thin film transistor including an organic semiconductor layer, a bank-insulating layer positioned at least in part on the data line, the bank-insulating layer including a wall portion which defines a pixel area, and a pixel electrode formed in the pixel area.

Organic thin film transistor substrate and method of manufacturing the same

The present invention provides a display device and a manufacturing method thereof. The display device includes a gate line, a data line that is insulated from and crosses the gate line, a thin film transistor including a semiconductor layer and connected to the gate line and the data line, a pixel electrode connected to the thin film transistor, and a dummy drain electrode adjacent to a channel region of the thin film transistor. The dummy drain electrode is not connected to the pixel electrode.

Display device and manufacturing method thereof

A display device includes an insulation substrate, a source electrode and a drain electrode disposed on the insulation substrate and distanced from each other and including a channel area interposed therebetween, a wall exposing portions of the source electrode and the drain electrode, and defining an opening area surrounding the channel area, and an organic semiconductor layer covering the channel area, and comprising a first sub layer and a second sub layer having different grain sizes.

Growing community of inventors

Suwon-si, South Korea

Min-Ho Yoon