Hyundai Electronics Industries Co. Ltd.

Hynix Semiconductor Inc.

Cj Cheiljedang Corporation

Korea Advanced Institute of Science and Technology

Min Ho Jung

Jae Chang Jung

Ki Ho Baik

Geun Su Lee

Cheol Kyu Bok

Cha Won Koh

Sung Eun Hong

Jin Soo Kim

Hyeong Soo Kim

Chi Hyeong Roh

Keun Kyu Kong

Jin Baek Kim

Hyung Gi Kim

Myoung Soo Kim

Sang Mok Lee

Da Eun Kim

Kyeong Ho Chang

Jung Min Kim

Sun Joo Moon

Jeung Yil Park

Jong Ho Cheong

Jin Hwa Chang

Ki Soo Shin

Young Rae Kim

Young Ran Kim

Chang Il Choi

Ki Ho Balk

A rigid polyurethane foam which is a polymerization product of a composition including a concentrated acid hydrolytic lignin, a polyol, and an isocyanate, and a method of preparing the rigid polyurethane foam.

Rigid polyurethane foam and preparation method thereof

A method of preparing a low-molecular lignin derivative comprises the step of: preparing lignin by hydrolyzing lignocellulosic biomass with an acid; preparing a first mixture by mixing 100 parts by weight of the lignin and 500 parts or more by weight of a phenolic compound; preparing a second mixture by mixing the first mixture with a solvent including the hydrophobic polar solvent; and recovering a low-molecular lignin derivative from the second mixture.

Method for preparing low-molecular lignin derivative

The present invention provides a process for using an amine contamination-protecting top-coating composition. Preferably, the amine contamination-protecting top-coating composition of the present invention comprises an amine contamination-protecting compound. Useful amine contamination-protecting compounds include amine derivatives; amino acid derivatives; amide derivatives; urethane derivatives; urea derivatives; salts thereof; and mixtures thereof. The amine contamination-protecting top-coating composition of the present invention reduces or eliminates problems such as T-topping due to a post exposure delay effect and/or difficulties in forming a fine pattern below 100 nm due to acid diffusion associated with conventional lithography processes involving a photoresist polymer containing an alicyclic main chain using a light source, such as KrF (248 nm), ArF (193 nm), F(157 nm), E-beam, ion beam and extremely ultraviolet (EUV).

Process for forming a fine pattern using a top-coating composition for a photoresist and product formed by same

The present invention discloses a cross-linking monomer represented by the following Chemical Formula 1, a process for preparing a photoresist polymer using the same, and said photoresist polymer: wherein, R' and R&#x2033; individually represent hydrogen or methyl; m represents a number of 1 to 10; and R is selected from the group consisting of straight or branched Calkyl, straight or branched Cester, straight or branched Cketone, straight or branched Ccarboxylic acid, straight or branched Cacetal, straight or branched Calkyl including at least one hydroxyl group, straight or branched Cester including at least one hydroxyl group, straight or branched Cketone including at least one hydroxyl group, straight or branched Ccarboxylic acid including at least one hydroxyl group, and straight or branched Cacetal including at least one hydroxyl group.

Cross-linking monomers for photoresist, and process for preparing photoresist polymers using the same

The present invention provides an additive for a photoresist composition for a resist flow process. A compound of following Formula 1 having low glass transition temperature is added to a photoresist composition containing a polymer which is not suitable for the resist flow process due to its high glass transition temperature, thus improving a flow property of the photoresist composition. As a result, the photoresist composition comprising an additive of Formula 1 can be used for the resist flow process. wherein, A, B, R and R' are as defined in the specification of the invention.

Additive for photoresist composition for resist flow process

The present invention provides an over-coating composition comprising a basic compound for coating a photoresist composition to provide a vertical photoresist pattern.

Top-coating composition for photoresist and process for forming fine pattern using the same

Photoresist monomers, photoresist polymers prepared thereof, and photoresist compositions using the polymer are disclosed. More specifically, photoresist polymers comprising maleimide monomer represented by Formula 1, and a composition comprising the polymer thereof are disclosed. The photoresist composition has excellent etching resistance, heat resistance and adhesiveness, and can be developed in an aqueous tetramethylammonium hydroxide (TMAH) solution. As the composition has low light absorbance at 193 nm and 157 nm wavelength, and it is suitable for a process using ultraviolet light source such as VUV (157 nm)wherein, X, X, R, Rand Rare defined in the specification.

Maleimide-photoresist monomers containing halogen, polymers thereof and photoresist compositions comprising the same

Photoresist composition for resist flow process

Partially crosslinked polymer for bilayer photoresist

Reflection-inhibiting resin used in process for forming photoresist pattern

A photoresist polymer for a top-surface imaging process by silylation (TIPS), and a photoresist composition comprising the same. The protecting group of the present photoresist polymer is selectively protected in an exposed region, and thus a hydroxyl group is generated. The hydroxyl group reacts with the silylation agent to cause a silylation process. Accordingly, when the photoresist film is dry-developed, the exposed region only remains to form a negative pattern. In addition, the present photoresist composition has excellent adhesiveness to a substrate, thus preventing a pattern collapse in forming a minute pattern. As a result, the present photoresist composition is suitable for a lithography process using light sources such as ArF (193 nm), VUV (157 nm) and EUV (13 nm).

Photoresist polymer for top-surface imaging process by silylation and photoresist composition containing the same

The present invention provides a method for reducing or eliminating a poor pattern formation on a photoresist film by contacting the photoresist film with an alkaline solution prior to its exposure to light. Methods of the present invention significantly reduce or prevent T-topping and top-loss.

Process for forming a photoresist pattern comprising alkaline treatment

The present invention relates to a photoresist composition containing a photo radical generator, more specifically, to a photoresist composition which comprises (a) photoresist resin, (b) a photoacid generator, (c) an organic solvent and (d) a photo radical generator. The present photoresist composition reduces or prevents a sloping pattern formation due to a higher concentration of acid in the upper portion of the photoresist relative to the lower portion of the photoresist.

Photoresist composition containing photo radical generator with photoacid generator

Photoresist monomer, polymer thereof and photoresist composition containing the same

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Kyoungki-do, South Korea

Min Ho Jung