Jusung Engineering Co., Ltd.

Min Ho Cheon

Chul Joo Hwang

Chul-Joo Hwang

Jong Sik Kim

Jin Hyuk Yoo

Seung Chul Shin

Won Woo Jung

Dong Seok Chun

Jeong Mi Kim

The present inventive concept relates to a substrate processing apparatus comprising: a chamber; a substrate support part which supports one or more substrates in the chamber; an upper electrode which is disposed above and arranged opposite to the substrate support part; and a lower electrode which is disposed below and spaced apart from the upper electrode, wherein the lower electrode includes a first electrode to which first RF power having a first frequency is applied and a second electrode to which second RF power having a second frequency different from the first frequency is applied.

Substrate processing apparatus

The present inventive concept relates to a gas distribution apparatus of a substrate processing apparatus including: a first gas distribution module distributing a processing gas to a first gas distribution space; and a second gas distribution module distributing a processing gas to a second gas distribution space which differs from the first gas distribution space, a substrate processing apparatus, and a substrate processing method.

Apparatus for distributing gas, and apparatus and method for processing substrate

One embodiment of a substrate supporting apparatus comprises: a support member for supporting a substrate; and a temperature compensating member disposed at the edge of the support member, and compensating the temperature of the substrate, wherein the support member may be made of a light-transmissive material, the temperature compensating member may be made of an opaque material, and the surface of the temperature compensating member may be made of a material having corrosion resistance against a cleaning gas.

Substrate supporting apparatus

Disclosed is a substrate processing method including gas injection including a source material containing silicon towards substrates received in a reaction chamber, depositing the source material on the substrates by generating plasma including oxygen radicals so as to form deposition films, and executing surface treatment of the deposition films by injecting plasma gas including oxygen radicals.

Growing community of inventors

Gwangju-si, South Korea

Min Ho Cheon