Samsung Electronics Co., Ltd.

Electronics and Telecommunications Research Institute

Kt Corporation

Sk Telecom Company, Ltd.

Hanaro Telecom., Inc.

Ktfreetel Co., Ltd

Min-Hee Cho

Jaehyuk Jang

Hyun-Jeong Kang

Jung-Je Son

Sung-Jin Lee

Yeong-Moon Son

Ji-Young Kim

Kwang-Seop Eom

Jae-Hee Cho

Bong-Gee Song

Seung-Eun Hong

Hyeong-Jong Ju

Yoo-Sang Hwang

Yong-Il Kim

Nam-Gi Kim

Jeong-ho Park

Hyoung-Kyu Lim

Byung-Han Ryu

In-Seok Hwang

Geun-Hwi Lim

Chul-Sik Yoon

Jae-Heung Kim

Hong-Sung Chang

Yun-Sang Park

Byoung-Ha Yi

Hyon-Goo Kang

Seung-Ku Hwang

Kun-Min Yeo

Soon-Yong Lim

Byung-Hyun Lee

Jin-Kwan Jung

Kwang-Sik Kim

Jae-Hyuk Jang

Byung Hyun Lee

Jin-Hyun Youn

Kang-Gyu Lee

Seok-Joo Shin

Boong-Gee Song

Nam-Gi N° 842-1603 Byeokjeokgol 8Danji Apt Kim

Joong-Hoo Jeong

An Internet Protocol (IP) address acquisition in a broadband wireless communication system is disclosed. A terminal includes a driver for loading one of a plurality Media Access Control (MAC) addresses for a multi-Frequency Allocation (FA) connection when the terminal is initialized; an interface for registering the loaded MAC address to use in an upper layer of a MAC layer; and a manager for acquiring an IP address using the registered MAC address when a network entry for at least one FA is complete.

Apparatus and method for obtaining IP address of terminal using multiple frequency allocations in broadband wireless communication system

A semiconductor device includes a device isolation region defining an active region in a substrate, and gate structures buried in the active region of the substrate. At least one of the gate structures includes a gate trench, a gate insulating layer conformally formed on an inner wall of the gate trench, a gate barrier pattern conformally formed on the gate insulating layer disposed on a lower portion of the gate trench, a gate electrode pattern formed on the gate barrier pattern and filling the lower portion of the gate trench, an electrode protection layer conformally formed on the gate insulating layer disposed on an upper portion of the gate trench to be in contact with the gate barrier pattern and the gate electrode pattern, a buffer oxide layer conformally formed on the electrode protection layer, and a gate capping insulating layer formed on the buffer oxide layer to fill the upper portion of the gate trench.

Semiconductor device having buried gate structure and method of fabricating the same

An apparatus and method for dynamic channel allocation in a multiple channel wireless communication system are provided. The apparatus includes a scheduler for dividing resources to be used for a band Adaptive Modulation and Coding (AMC) channel and a diversity channel, a generator for generating a MAP heading field including physical distribution information on the band AMC channel and the diversity channel, and a mapper for mapping the MAP heading field to a predetermined physical resource region.

Apparatus and method for dynamic channel allocation in multiple channel wireless communication system

A semiconductor device having a recessed active edge is provided. The semiconductor devices include an isolation layer disposed in a substrate to define an active region. A gate electrode is disposed to cross over the active region. A source region and a drain region are disposed in the active region on both sides of the gate electrode. A recessed region is disposed under the gate electrode and on an edge of the active region adjacent to the isolation layer. A bottom of the recessed region may be sloped down toward the isolation layer. The gate electrode may further extend into and fill the recessed region. That is, a gate extension may be disposed in the recessed region. A method of fabricating the semiconductor device is also provided.

Semiconductor devices having a recessed active edge

Recessed gate transistor structures and methods for making the same prevent a short between a gate conductive layer formed on a non-active region and an active region by forming an insulation layer therebetween, even though a misalignment is generated in forming a gate. The method and structure reduce the capacitance between gates. The method includes forming a device isolation film for defining an active region and a non-active region, on a predetermined region of a semiconductor substrate. First and second insulation layers are formed on an entire face of the substrate. A recess is formed in a portion of the active region. A gate insulation layer is formed within the recess, and then a first gate conductive layer is formed within the recess. A second gate conductive layer is formed on the second insulation layer and the first gate conductive layer. Subsequently, source/drain regions are formed.

Recessed gate transistor structure and method of forming the same

Method of fabricating semiconductor devices having a recessed active edge

A method for performing a handover by a subscriber station (SS) in a broadband wireless communication system including a serving base station (BS) communicating with the SS, and at least one neighbor BS neighboring the serving BS. The SS receives downlink signals from the serving BS and the neighbor BS; measures an arrival time difference between the downlink signal received from the serving BS and the downlink signal received from the neighbor BS; and transmits the measured arrival time difference to the serving BS.

Method and apparatus for performing fast handover through fast ranging in a broadband wireless communication system

In a method of fabricating a semiconductor device having an alignment key and a semiconductor device fabricated thereby. The method of fabricating a semiconductor device includes providing a semiconductor substrate having a scribe lane region and a cell region. An etch barrier pattern and a gate pattern are formed on the scribe lane region and the cell region respectively. A first interlayer insulating layer is formed to cover the etch barrier pattern and the gate pattern. A preliminary alignment key pattern and a bit line pattern are formed on the first interlayer insulating layer of the scribe lane region and the cell region respectively. A second interlayer insulating layer is formed to cover the preliminary alignment key pattern and the bit line pattern. The second interlayer insulating layer and the first interlayer insulating layer are patterned to expose the etch barrier pattern, thereby forming an alignment key pattern in the scribe lane region, and concurrently, forming a storage node contact opening in the cell region.

Method of fabricating semiconductor device having alignment key and semiconductor device fabricated thereby

Information for different subscribers of a service with the same modulation and channel encoding method is transmitted by allocating radio resources in a wireless portable Internet system. Also, identifier information on the subscriber of a concurrently allocated radio resource is transmitted through common control information. Therefore, information for a plurality of subscribers coexists in a single radio resource block, and it can be easily transmitted. Since a subscriber station which has received downlink information can know to which radio resource block the information for the corresponding station is allocated through the subscriber identifier information transmitted as common control information, the subscriber station can access desired information by accessing a specific radio resource block to which information for the subscriber is allocated in the received frame.

Method and device for allocating radio resources in wireless portable network system

An apparatus and method for controlling operation states of a medium access control layer by a mobile subscriber station (MSS) in a broadband wireless access communication system. The method includes: state-transitioning into a sleep state or an idle state when there is no data transmitted between a base station and the MSS during a predetermined first time interval in an awake state; and performing a location change in the idle state when the mobile subscriber station moves from a first paging zone to a second paging zone, and state-transiting into the awake state when the mobile subscriber station in the idle state detects a paging to the mobile subscriber station. The method minimizes power consumption and maximizes efficiency in use of radio resources.

System and method for controlling operation states of a medium access control layer in a broadband wireless access communication system

A transistor includes a substrate and an isolation region disposed in the substrate. The isolation regions defines an active region comprising upper and lower active regions, the upper active region having a first width and the lower active region having a second width greater than the first width. An insulated gate electrode extends through the upper active region and into the lower active region. Source and drain regions are disposed in the active region on respective first and second sides of the insulated gate electrode. The insulated gate electrode may include an upper gate electrode disposed in the upper active region and a lower gate electrode disposed in the lower active region, wherein the lower gate electrode is wider than the upper gate electrode. Related fabrication methods are described.

Transistors including laterally extended active regions and methods of fabricating the same

A semiconductor device includes a dual gate dielectric layer that increases a performance of a semiconductor device. The semiconductor device includes a first dielectric layer having a predetermined thickness on a semiconductor substrate. The first dielectric layer is formed on a first region. The semiconductor device also includes a second dielectric layer having a dielectric constant higher than that of the first dielectric layer. The second dielectric layer is formed on both the first region and a second region.

Method of forming dual gate dielectric layer

There is provided a method for forming a gate using a gate layout of a semiconductor device. The layout includes an active region with a stepped side boundary, a plurality of gates crossing over the active region, and tabs attached to the gates on the side boundary of the active region, wherein two tabs adjacent by a topology of the stepped side boundary are disposed in an oblique direction. The gates can be patterned.

Method for forming gate of semiconductor device

A mobile communication system using an orthogonal frequency division multiplexing (OFDM)/orthogonal frequency division multiple access (OFDMA) scheme. The method for assigning ranging codes in the OFDM/OFDMA communication system includes classifying rangings between a base station and a mobile subscriber station (MSS) of the OFDM/OFDMA communication system into an initial ranging, a periodic ranging, a bandwidth request ranging, and a handover ranging. A first number of ranging codes used for the rangings are created and a second number of ranging codes selected from the first number of ranging codes are assigned as handover ranging codes used for the handover ranging.

System and method for ranging for a fast handover in a mobile communication system

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Gyeonggi-do, South Korea

Min-Hee Cho