Elite Semiconductor Memory Technology, Inc

Min Chung Chou

A main word line driving circuit for driving word lines in a memory device comprises first and second level shifting units and an inverting unit. The first level shifting unit is configured to convert a decode signal into a first operative signal, and the second level shifting unit is configured to convert the decode signal into a second operative signal. The inverting unit is configured to receive the first and second operative signals. A supply voltage of the first level shifting unit is selectively switched to a first bias voltage when the plurality of word lines are selected or partially selected and switched the output voltage to a second bias voltage when the plurality of word lines are deselected.

Memory device and associated main word line and word line driving circuit

A method for operating a memory device with pseudo double clock signals comprises the steps of: generating an even clock signal and an odd clock signal, wherein the clock rates of both the even clock signal and the odd clock signal are half that of the input clock signal, and the even clock signal is the inverse signal of the odd clock signal; if the logic level of the even clock signal is 1 when receiving a trigger of a control signal, applying the even clock signal to a memory device; and if the logic level of the odd clock signal is 1 when receiving another trigger of the control signal, applying the odd clock signal to the memory device.

Memory device with pseudo double clock signals and the method using the same

A semiconductor memory device comprises a plurality of memory cells, a bit line sense amplifier, a local sense amplifier, and a sense amplifier. The memory cells are connected between a word line and a bit line pair, and the bit line sense amplifier is configured to amplify voltages of data from the bit line pair and then transmits the data to a local data line pair. The local sense amplifier is configured to amplify voltages of the data from the local data line pair and transmit the data to a global data line pair in response to first and second control signals, and the sense amplifier is configured to amplify the voltages of the data from the global data line pair and transmit the data to an input/output line pair during a read operation. The local sense amplifier comprises a first read circuit, a second read circuit, and a write circuit, and when the memory device performs the read operation, the data is transmitted from the first read circuit to the write circuit via the second read circuit.

Semiconductor memory device and associated local sense amplifier

A duty cycle correction circuit comprises first and second pulse generators, a clock dividing unit, a detecting unit, and a pulse width control unit. The first pulse generator is configured to generate a first edge of a first pulse signal in synchronization with a first edge of a first clock signal, and the second pulse generator is configured to generate a first edge of a second pulse signal in synchronization with a second edge of the first pulse signal. The clock dividing unit is configured to generate a second clock signal by dividing the frequency of the first clock signal. The detecting unit is configured to generate a detecting signal according to the second clock signal and a time interval between the first edge of the first pulse signal and a second edge of the second pulse signal. In particular, pulse widths of the first and second pulse signals are the same and are adjustable according to a control signal from the pulse width control unit.

Growing community of inventors

Hsinchu, Taiwan

Min Chung Chou