Elite Semiconductor Memory Technology, Inc

Elite Semiconductor Microelectronics Technology Inc.

Min-Chung Chou

Tse-Hua Yao

Shu-Fang Wu

A repairable semiconductor memory device includes an input/output bus, a plurality of stacked memory chips, and a redundant repair unit. Each of the memory chips compares a memory address information with an address information to be repaired to generate a first comparison result for determining whether to allow the input/output bus to access the data corresponding to the memory address information in the memory chips. The redundancy repair unit compares the memory address information with the address information to be repaired to generate a second comparison result for determining whether to allow a redundant memory cell corresponding to the memory address information to be coupled to the input/output bus. In this way, the semiconductor memory device can repair any layer of the memory chips to improve the yield to solve the problem of previously having a lower yield.

Repairable semiconductor memory device

A testing apparatus has first and second IOs, first and second comparators, a data combining module, and first and second data output circuits. The first and second comparators respectively receive first and second test data. The data combining module electrically connected to the first and second comparators receive compared first and second test data of the first and second comparators, and further receive a command code. The first and second data output circuits are respectively connected to the first and second IOs, and are further electrically connected to the data combining module. According to the command code, the data combining module outputs the compared first and second test data respectively to the first and second IOs through the first and second data output circuits, or respectively to the second and first IOs through the second and first data output circuits.

Testing apparatus and folded probe card testing system

Embodiments of the invention relate to a reference voltage pre-processing circuit and method for a reference voltage buffer. The embodiments include a filter to control/reduce the noise and/or interference attached to a reference voltage to be provided to a reference voltage buffer by passing the reference voltage via two transistor in series. Furthermore, the embodiments include an auxiliary voltage circuit which interfaces the filter and the reference voltage buffer to avoid that the reference voltage buffer get an invalid reference voltage.

Reference voltage pre-processing circuit and reference voltage pre-processing method for a reference voltage buffer

In exemplary embodiments of the present disclosure, a level shifting circuit and an integrated circuit using the level shifting circuit are provided. Compared to the conventional level shifting circuit, the level shifting circuit herein further has another pair of PMOS transistors and another pair of NMOS transistors, wherein the other pair of the PMOS transistors is connected to the pair of the PMOS transistors, and the other pair of the NMOS transistors is connected to the pair of the NMOS transistors. PMOS and NMOS transistors of the level shifting circuit are protected, the lifetime of the level shifting circuit is increased, and the damage probability of the level shifting circuit is decreased. The other pair of the PMOS transistors being turned on can be operated in the saturation region rather than in the linear region, such that the operation speed of the level shifting circuit is enhanced.

Level shifting circuit and integrated circuit

A control circuit applied in an e-fuse system selectively operates in a feeding mode and a reading mode. When the control circuit operates in the feeding mode, the control circuit is arranged to store a program code for indicating whether to connect a fuse of the e-fuse system thereto; and when the control circuit operates in the reading mode, the control circuit is arranged to read a state of the fuse of the e-fuse system coupled to the control circuit.

Control circuit applied in e-fuse system and related method

An exemplary embodiment of the present disclosure illustrates a memory test system comprising a memory device, a probe card, and a tester. The memory device comprises a memory die with a plurality of memory banks, a plurality of input circuits, and a plurality of output circuits, wherein each of the input circuits has a first input pin and a second pin, the first input pins of the input circuits are used to read a plurality of patches of data stored in memory cells of the memory banks, and the second input pins are used to receive a compressed result. The output circuits receive compressed signals output from the input circuits, and the probe card mixes the compressed output signals output from the output circuits to output a mixed compressed output signal to the tester.

Memory test system and method

An input buffer includes a first driving circuit, a second driving circuit, a pull up circuit, and a pull down circuit. The first driving circuit is arranged for driving a first input signal to generate an output signal. The second driving circuit is arranged for driving the output signal. The pull up circuit is arranged for selectively controlling the second driving circuit to pull up the output signal according to the first input signal and a second input signal. The pull down circuit is arranged for selectively controlling the second driving circuit to pull down the output signal according to the first input signal and the second input signal.

Input buffer with current control mechanism

A dynamic random-access memory (DRAM) and a method for testing the DRAM are provided. The DRAM includes a memory cell, a bit line associated with the memory cell, a local buffer, and a bit line sense amplifier (BLSA). The local buffer receives a first power voltage as power supply. The local buffer provides a ground voltage to the bit line when a data signal is de-asserted and provides the first power voltage to the bit line when the data signal is asserted. The BLSA receives a second power voltage as power supply. The BLSA provides the second power voltage to the bit line when the data signal and a wafer level burn-in test signal are both asserted. The second power voltage may be higher than the first power voltage. The wafer level burn-in test signal is asserted when the DRAM is in a wafer level burn-in test mode.

DRAM and method for testing the same in the wafer level burn-in test mode

The invention provides a delay lock loop circuit (DLL) for generating a locked signal, the DLL circuit includes: a phase detector, a first and a second voltage controlled delay chains, a charge pump and a duty cycle detection pump. The phase detector generates a phase detecting result by detecting a phase difference between the clock signal and the locked signal. The first and the second voltage controlled delay chains generate a first and a second delayed signals by delaying the clock signal according to the first and the second control signals, respectively. The charge pump is used for generating the first and the second control signal according to the phase detecting result. The duty cycle detection pump is used for controlling a voltage level of the second control signal according to the first and the second delayed signals.

Delay lock loop circuit

The invention provides a test circuit for n input/output arrays. Each of the n input/output arrays has M pairs of input/output. The test circuit includes M write drivers and M comparing circuits. The iwrite driver provides an itest signal to the iinputs of all of the n input/output arrays, and 1&#x2266;i&#x2266;M. The jcomparing circuit determines if joutput signals of all of the n input/output arrays are the same, and outputs a jcomparing result correspondingly, and 1&#x2266;j&#x2266;M. The invention also provides a method of testing n input/output arrays. The invention also provides a storage device.

Test circuit for input/output array and method and storage device thereof

A delay-locked loop (DLL) and a method of using the DLL are provided. The DLL receives an external clock signal and outputs an internal clock signal. The DLL includes a variable delay line and a phase detector. The variable delay line delays the external clock signal and outputs a delayed external clock signal. The phase detector compares the phase of the external clock signal and the phase of the internal clock signal. The method includes the following steps: providing the delayed external clock signal directly to the phase detector of the DLL as the internal clock signal in a high frequency mode; and inverting the delayed external clock signal and providing an inverted delayed external clock signal to the phase detector as the internal clock signal in a low frequency mode.

Delay-locked loop and method of using the same

A dynamic RAM which includes a first inverter, a second inverter, a sense amplifier, a first pair of switches, a pair of bit lines, and a dynamic RAM cell. The first inverter receives a first driving signal. A power end of the first inverter is coupled to a first voltage source. The second inverter receives a second driving signal output from the first inverter. A power end of the second inverter is coupled to a second voltage source. The sense amplifier senses and amplifies a voltage difference between a first sensing signal and a second sensing signal. A power end of the sense amplifier is coupled to a third voltage source, wherein a voltage value of the second voltage source is between a voltage value of the first voltage source and a voltage value of the third voltage source.

Dynamic random access memory and method of driving dynamic random access memory

A memory device is provided. The memory device includes a plurality of memory array banks, a bus, a data buffer, and four data paths. The data buffer provides data from the memory array banks to an external node. The first data path includes a first compression module for compressing the data from the memory array banks to the bus. The second data path transmits the data from the memory array banks to the bus. The third data path includes a second compression module for compressing data from the bus to the data buffer. The fourth data path transmits the data from the bus to the data buffer.

Memory device with data paths for outputting compressed data

A delay circuit has: an inverting receiver with a resistive element, the inverting receiver having an input node for receiving an input signal and an output node coupled to the resistive element; a capacitive element, coupled to the output node of the inverting receiver and the resistive element; a first transistor, having lower turned ON voltage at higher temperature; a second transistor, used for generating a rail to rail signals on a terminal of the first transistor; and an output inverter, having an input node coupled to the first transistor and an output node for outputting an output signal of the delay circuit. Further, a third transistor is used for enhancing pulling low of the output signal of the delay circuit.

Delay circuit with constant time delay independent of temperature variations

A voltage regulator in a semiconductor memory has: a comparing unit including first and second bias current sources, for comparing an output voltage with first and second reference voltages under control of a first signal, the second bias current source being ON under control of a second signal; and a driver active element, coupled to the comparing unit, for outputting the output voltage. Before sensing operations, the output voltage is reset to the second reference voltage. During the sensing operations, the output voltage is maintained at the first reference voltage and the second signal is asserted for turning ON the second bias current source for raising speed of the comparing unit. After the sensing operations, the output voltage is reset to the second reference voltage.

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Hsinchu, Taiwan

Min-Chung Chou