Samsung Electronics Co., Ltd.

Seoul National University

International Business Machines Corporation

Snu Rdb Foundation

Chartered Semiconductor Manufacturing Ltd (corporation)

Min-Chul Sun

Byung-Gook Park

Myeong-Cheol Kim

Dae Won Ha

Kyoung-Sub Shin

Jae Young Park

Young Su Chung

Jong Min Jeon

Seung Mo Ha

Kwang Yong Yang

Dong Hoon Hwang

Sun-Pil Youn

Ja-hum Ku

Jong Hwa Baek

Min-Joo Kim

Chang-won Lee

Sug-Woo Jung

Seong-Jun Heo

Kwan-jong Roh

Thomas W Dyer

Chong Sup Chang

Jong In Baek

Oliver Desmond Patterson

Young Way Teh

Horatio Seymour Wildman

Ja-Hum Ku

Kwan-Jong Roh

Kyoung Woo Lee

Jong-Pyo Kim

Jun Jung Kim

Jong Ho Yang

Ja Hum Ku

In a method of manufacturing a semiconductor device, first to third active fins are formed on a substrate. Each of the first to third active fins extends in a first direction, and the second active fin, the first active fin, and the third active fin are disposed in this order in a second direction crossing the first direction. The second active fin is removed using a first etching mask covering the first and third active fins. The third active fin is removed using a second etching mask covering the first active fin and a portion of the substrate from which the second active fin is removed. A first gate structure is formed on the first active fin. A first source/drain layer is formed on a portion of the first active fin adjacent the first gate structure.

Methods of manufacturing semiconductor devices by etching active fins using etching masks and forming source/drain layers on the active fins

A semiconductor device including a device isolation region is provided. The semiconductor device includes first active regions disposed on a substrate, and an isolation region between the active regions. The isolation region includes a first portion formed of a first insulating material, and a second portion formed of a second insulating material, having different characteristics from those of the first insulating material. The first portion is closer to the first active regions than the second portion. The second portion has a bottom surface having a height different from that of a bottom surface of the first portion.

Semiconductor device including isolation regions

Methods of manufacturing semiconductor devices by etching active fins using etching masks

Methods of manufacturing finFET semiconductor devices

A semiconductor device includes a structure on a substrate and a plurality of gate-all-around devices on the structure. The structure includes a plurality of sacrificial layers and a plurality of active layers alternately stacked on one another. The sacrificial layers have different widths and the active layers have different widths to form multiple stepped layers on the substrate. The gate-all-around devices are on respective ones the multiple stepped layers.

Semiconductor device

A method for fabricating a semiconductor device includes forming a first mask on a substrate, forming a first side wall of a fin by performing a first etching of the substrate using the first mask, forming a second mask on the substrate, the second mask being different from the first mask, and forming a second side wall of the fin by performing a second etching of the substrate using the second mask.

Method for fabricating semiconductor device

A semiconductor device has gate-all-around devices formed in respective regions on a substrate. The gate-all-around devices have nanowires at different levels. The threshold voltage of a gate-all-around device in first region is based on a thickness of an active layer in an adjacent second region. The active layer in the second region may be at substantially a same level as the nanowire in the first region. Thus, the nanowire in the first region may have a thickness based on the thickness of the active layer in the second region, or the thicknesses may be different. When more than one active layer is included, nanowires in different ones of the regions may be disposed at different heights and/or may have different thicknesses.

Semiconductor device with nanowires in different regions at different heights

A semiconductor device comprises a substrate extending in a horizontal direction and a vertical transistor on the substrate. The vertical transistor comprises: a first diffusion region on the substrate; a channel region on the first diffusion region and extending in a vertical direction relative to the horizontal direction of the extension of the substrate; a second diffusion region on the channel region; and a gate electrode at a sidewall of, and insulated from, the channel region. A horizontal transistor is positioned on the substrate, the horizontal transistor comprising: a first diffusion region and a second diffusion region on the substrate and spaced apart from each other; a channel region on the substrate between the first diffusion region and the second diffusion region; and a gate electrode on the channel region and isolated from the channel region. A portion of a gate electrode of the vertical transistor and a portion of the gate electrode of the horizontal transistor are at a same vertical position in the vertical direction relative to the substrate.

Semiconductor devices having vertical device and non-vertical device and methods of forming the same

Semiconductor device and method for fabricating the same

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Seoul, South Korea

Min-Chul Sun