Taiwan Semiconductor Manufacturing Comp. Ltd.

Min-Chiang Chuang

Lin-Yu Huang

Liang-Yin Chen

Sung-Li Wang

Chia-Cheng Chen

Shuen-Shin Liang

Chun-Hung Wu

Po-Chin Chang

Hong-Mao Lee

Yan-Ming Tsai

Tsun-Jen Chan

Jhih-Rong Huang

Cheng-Wei Lian

Kuan-Kan Hu

Pinyen Lin

Yuting Cheng

Chuan-Hui Shen

Szu-Hsian Lee

A semiconductor device includes a source/drain portion, a metal silicide layer disposed over the source/drain portion, and a transition layer disposed between the source/drain portion and the metal silicide layer. The transition layer includes implantation elements, and an atomic concentration of the implantation elements in the transition layer is higher than that in each of the source/drain portion and the metal silicide layer so as to reduce a contact resistance between the source/drain portion and the metal silicide layer. Methods for manufacturing the semiconductor device are also disclosed.

Semiconductor device and method for manufacturing the same

Growing community of inventors

Hsinchu, Taiwan

Min-Chiang Chuang