United Microelectronics Corp.

Min-Chi Fan

Hung-Lin Shih

Hsiang-Ying Wang

Huan-Shun Lin

Jih-Shun Chiang

A semiconductor device is provided. The semiconductor device comprises a substrate, a gate structure, a spacer, a SiGelayer and a SiGeprotection layer. The gate structure is deposited on the substrate and the spacer is deposited on the sidewalls of the gate structure. The SiGelayer is deposited in the substrate on both sides of the spacer and extended to a portion beneath part of the spacer. In addition, the top level of the SiGelayer is higher than the surface of the substrate. Moreover, the SiGeprotection layer is deposited on the SiGelayer and the SiGeprotection layer comprises SiGe, where 0&#x2266;y1&#x3c;y.

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Hsinchu, Taiwan

Min-Chi Fan