Electronics and Telecommunications Research Institute

Korea Advanced Institute of Science and Technology

Gwangju Institute of Science and Technology

Korea Institute of Science and Technology

Min Cheol Shin

Seong Jae Lee

Kyoung Wan Park

Jong Dae Kim

Hye Jin Kim

Kang Ho Park

Jae Hyun Lee

Jeong Il Seo

Kyeong Ok Kang

Seung Young Park

Sung Q Lee

Sang Kyun Lee

Jae Hyoun Yoo

Chul Soon Park

Suk Hee Han

Doo Hyung Kang

Sang Chul Oh

Philip Arthur Nelson

Byoung Chul Min

Filippo Fazi

Moon Ho Park

Woo Jin Jeong

Jun Beom Seo

Inn Yeal Oh

Se Myung Wang

Dae Sung Kim

A negative capacitance logic device includes a first field effect transistor (FET) and a second FET. The first FET is coupled between a power supply voltage and an output node, and the first FET includes a ferroelectric having a negative capacitance. The second FET is coupled between the output node and a ground voltage, and the second FET includes a ferroelectric having a negative capacitance. The negative capacitance logic differentiates an input voltage applied to an input node to provide an output voltage at the output node.

Negative capacitance logic device, clock generator including the same and method of operating clock generator

Example embodiments are related to a high power spin torque oscillator that is integrated by combining a transistor. The high power spin torque oscillator according to example embodiments may include a spin torque oscillator and a transistor. The spin torque oscillator may perform an oscillation function and a transistor may perform an amplification function by integrating the spin torque oscillator and a transistor in one chip. The transistor may amplify an amplification signal of the spin torque oscillator. The high power spin torque oscillator may be integrated on FET or BJT.

High power spin torque oscillator integrated on a transistor

Provided is a method and apparatus for reproducing a three-dimensional (3D) sound field. A method of reproducing a 3D sound field may determine a control region based on a wavelength of an excitation frequency, set, based on a loudspeaker array, at least one candidate control point in the control region, and determine a non-uniform control point corresponding to a non-uniform loudspeaker.

Method and apparatus for reproducing three-dimensional sound field

A piezoelectric speaker and a method of manufacturing the same that can obtain a high sound pressure using a piezoelectric thin film are provided. The piezoelectric speaker includes a piezoelectric thin film, electrodes formed on an upper surface or upper and lower surfaces of the piezoelectric thin film, a damping material layer formed on the lower surface of the piezoelectric thin film, and a frame attached around at least one of the piezoelectric thin film and the damping material layer using an adhesive.

Piezoelectric speaker and method of manufacturing the same

Sound can be listened to only in a listening area by maximizing a sound energy difference between a listening area and a non-listening area while maximizing sound radiation efficiency of each sound source. Accordingly, realistic sound can be provided to listeners without causing auditory disturbance to third parties, and maximal sound effects can be obtained with only minimal control.

Method and apparatus for controlling directional sound sources based on listening area

Provided is a forced acoustic dipole capable of regulating phases and acoustic pressures of first and second acoustic signals output from first and second pole speakers to freely steer the direction of an acoustic lobe. In addition, a forced acoustic multipole array is constituted by a plurality of forced acoustic dipoles. When the phases and acoustic pressures of the first and second acoustic signals output from the forced acoustic dipoles are regulated to steer an acoustic lobe in a specific direction, sound can be heard from a desired direction only without disturbing others.

Forced acoustic dipole and forced acoustic multipole array using the same

A single-electron memory device using the electron-hole Coulomb blockade is provided. A single-electron memory device in accordance with an embodiment of the present invention includes a plurality of quantum dot tunnel-junction arrays, a gate electrode, and source and drain electrodes. The plurality of quantum dot tunnel-junction arrays include at least two tunnel-junctions, are parallelly coupled to each other, and are well separated from each other to prevent single-electron tunneling between them. One of the plurality of quantum dot tunnel-junction arrays includes the gate electrode, and the voltage applied to the gate electrode can vary the number of electron-hole pairs. Each of the above-mentioned plurality of quantum dot tunnel-junction arrays includes separate source and drain electrodes where voltages are applied

Single-electron memory device using an electron-hole coulomb blockade

The present invention is to fabricate SOI wafer whose the silicon layer is very uniform and the impurity concentration is low. The insulating layer, that is, a composite layer of SiO2 and silicon, is grown on oxide substrate by means of a molecular beam epitaxy fabricating method using silicon as an original material in the oxygen atmosphere. The composite layer of the oxide and silicon is grown according to gradual decreasing the pressure of oxygen atmosphere. A top silicon layer of uniform thickness is grown by means of a molecular beam epitaxy fabricating method using only silicon material consecutively on the composite layer.

Method of fabricating SOI wafer

The present invention discloses a technique for applying diffraction characteristic of electrons to a two-dimensional electronic device to manufacture multi-functional transistor having various ON/OFF states. A quantum diffraction transistor according to the present invention is capable of adjusting the amplitude of drain current and having various ON/OFF states utilizing diffraction characteristic of electrons by interposing a reflection-type diffraction grating in an electron path. The inventive multi-functional quantum diffraction transistor uses a two dimensional electron gas in formed at a different species junction in a semiconductor heterostructure, and has a bent electron path between the source electrode and the drain electrode with a reflection-type diffraction grating. The quantum diffraction effect of the electrons is used for the control of the diffracted drain current.

Quantum diffraction transistor

The present invention discloses a technique for applying diffraction characteristics of electrons to a two-dimensional electronic device to manufacture multi-functional transistor having various ON/OFF states. Method of manufacturing a quantum diffraction transistor according to the present invention is capable of adjusting the amplitude of drain current and having various ON/OFF states utilizing diffraction characteristics of electrons by interposing a reflection-type diffraction grating in a bent electron path. In the inventive multi-functional quantum diffraction transistor using a two dimensional electron gas in quantum well structure formed at a different species junction in a heterostructure semiconductor device and having a bent electron path between the source electrode and the drain electrode with a reflection-type diffraction grating, the quantum diffraction effect of the electrons is used for the control of the diffracted drain current.

Method of manufacturing a quantum diffraction transistor

Growing community of inventors

Daejeon, South Korea

Min Cheol Shin