Samsung Electronics Co., Ltd.

Min Cheol Kwon

Dong Jun Shin

Shine Kim

Sun-Mi Yoo

Shin-Ho Choi

Seong Jun Ahn

Mi Kyeong Kang

Woon Hyug Jee

Jong-Chul Park

Sang Won Jung

Sung Kyun Lee

Hye Jeong Jang

Young Rae Jo

Eun Joo Oh

A memory storage device is capable of improving reliability of a memory system. The memory storage device comprises a memory controller, and a non-volatile memory connected to the memory controller. A method includes receiving, by the memory controller, a command from a host device, the command requesting lost LBA (logical block address) information resulting from a system shutdown of the memory storage device, in response to the command, providing, by the memory controller, the lost LBA information, and receiving, by the memory controller, recovered data corresponding to the lost LBA information, wherein the lost LBA information includes at least one of the number of LBAs lost by system shutdown, an LBA list lost by system shutdown, and deletion of a previous LBA list lost by system shutdown.

Memory storage device, method for operating the storage device and method for operating a host device

A nonvolatile memory system comprises a temporary power supply that supplies power in the event of an unexpected power interruption. The temporary power supply provides power while metadata stored in one or more buffers is compressed and transferred to a nonvolatile memory device.

Nonvolatile memory system and related method of preserving stored data during power interruption

The method of operating the data storage device includes performing channel distribution non-sequentially based on a logical address included in a data signal and outputting a channel address, and at least one of writing data to and reading stored data from a memory connected to one of a plurality of channels based on the channel address.

Method of operating data storage device and device thereof

A data storage device includes a flash memory including a plurality of data blocks and a flash translation layer that divides the plurality of data blocks into a data block of a first group and a data block of a second group, and that records the data signal to a data block of the first group or a data block of the second group which is extended from a data block of the first group.

Data storage device and data storage system including the same

The non-volatile random access memory (RAM) includes a non-volatile RAM array, a buffer configured to buffer data to be programmed in the non-volatile RAM array and configured to buffer data read from the non-volatile RAM array, and a control block configured to read data from at least one of the non-volatile RAM array and the buffer based on whether the data to be read has been stored in the buffer, a temperature when the data was programmed, and a time lapse since the programming of the data.

Non-volatile random access memory with a control circuit for preventing an initial resistance failure, a solid state drive, and a computer system including the same

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Seoul, South Korea

Min Cheol Kwon