Korea Institute of Science and Technology

Seoul National University

Snu Rdb Foundation

Min Ah Seo

Jae Hun Kim

Deok Ha Woo

Seok Pil Lee

Young Min Jhon

Taik Jin Lee

Chul Ki Kim

Sun Ho Kim

Joon Kui Ahn

Yong Soo Kim

Young Tae Byun

Min Chul Park

Chulki Kim

Taikjin Lee

Jong Chang Yi

Dae-sik Kim

Seok Hwan Kim

Dong Kyu Lee

Seong Chan Jun

Ju Yeong Oh

Woon Jo Cho

Byeong Ho Park

Hyo Suk Kim

Myung Suk Chun

Hyeong Ryeol Park

Youngchul Chung

Dae-Sik Kim

Min-Chul Park

Sae Chae Jeoung

Joon Mo Ahn

Jae Bin Choi

Yeong Jun Kim

Joong Wook Lee

Geun Chang Choi

Young Mo Jung

Kyungsun Moon

Dai Sik Kim

Provided is a cell-level retinal disease detection apparatus including a light imaging means configured to emit light to an eyeball and a light processing means which receives light reflected by the eyeball and processes and compensates light for an astigmatism aberration thereof which occurs at the eyeball to compensate. Here, the light processing means includes a wavefront sensor which senses the astigmatism aberration of the reflected light which occurs due to the eyeball and a light compensation mirror which compensates the light based on the sensed astigmatism aberration, and compensates for a difference in the astigmatism aberration to detect a disease of a retina of the eyeball.

Cell-level retinal disease detection apparatus

Disclosed is a terahertz trapping device including a substrate, and a film disposed on the substrate, wherein the film has a slot in a particular shape patterned to be engraved or a structure in a particular shape patterned by embossing the film to control motion of a particle using terahertz electromagnetic waves.

Terahertz trapping device

Provided is an extreme ultra-violet (EUV) beam generation apparatus using multi-gas cell modules in which a gas is prevented from directly flowing into a vacuum chamber by adding an auxiliary gas cell serving as a buffer chamber to a main gas cell, a diffusion rate of the gas is decreased, a high vacuum state is maintained, and a higher power EUV beam is continuously generated.

Apparatus for generating extreme ultra-violet beam using multi-gas cell modules

A method for forming a PN junction in graphene includes: forming a graphene layer, and forming a DNA molecule layer on a partial region of the graphene layer, the DNA molecule layer having a nucleotide sequence structure designed to provide the graphene layer with a predetermined doping property upon adsorption on the graphene layer. The DNA molecule has a nucleotide sequence structure designed for doping of graphene so that doped graphene has a specific semiconductor property. The DNA molecule is coated on the surface of the graphene layer of which the partial region is exposed by micro patterning, and thereby, PN junctions of various structures may be formed by a region coated with the DNA molecule and a non-coated region in the graphene layer.

Method for forming PN junction in graphene with application of DNA and PN junction structure formed using the same

Provided is a single pulse laser apparatus. The apparatus including a resonator having a first mirror, a second mirror, a gain medium, and electro-optic modulators (EOMs) which perform each mode-locking and Q-switching, the apparatus includes a photodiode which measures laser light that oscillates from the resonator, a synchronizer which converts an electrical signal generated by measuring the laser light into a transistor-transistor logic (TTL) signal, a delay unit which sets a latency determined in order to synchronize a mode-locked pulse with a Q-switched pulse to the TTL signal, and outputs a trigger TTL signal according to the latency, and a Q-driver which inputs the trigger TTL signal to the EOM which performs Q-switching, and causes the EOM to operates.

Single pulse laser apparatus

Disclosed herein is a single pulse laser apparatus that includes: a resonator having a first mirror, a second mirror, a gain medium, an electro-optic modulator (EOM) configured to perform single pulse switching, and an acousto-optic modulator (AOM) configured to perform mode-locking; a photodiode configured to measure a laser beam oscillated in the resonator; a synchronizer configured to convert an electrical signal, which is generated by measuring the laser beam, into a transistor-transistor logic (TTL) signal; a delay unit configured to set a delay time for the TTL signal to synchronize the EOM and the AOM and output a trigger TTL signal according to the delay time; an AOM driver configured to input the trigger TTL signal to the AOM that performs mode-locking and drive the AOM; and an EOM driver configured to input the trigger TTL signal to the EOM that performs single pulse switching and drive the EOM.

A plasmonic all-optical switch includes a graphene layer, a first dielectric layer located on the graphene layer, a nano-antenna located on the first dielectric layer, and a second dielectric layer located on the nano-antenna. An incident beam is propagated by means of a surface plasmon wave generated at an interface between the graphene layer and the first dielectric layer. Further, localized surface plasmon resonance is selectively generated at an interface between the nano-antenna and the second dielectric layer by means of a pump beam incident to the nano-antenna to decrease an intensity of the incident beam. The plasmonic all-optical switch may operate at an ultrahigh speed just with a small light energy without any electric method, greatly reduce power consumption of an IT device by applying to an all-optical transistor or the like, and increase a processing rate.

Plasmonic all-optical switch and light control method using the same

Provided are an apparatus and method for calibrating an extreme ultraviolet (EUV) spectrometer in which a wavelength of a spectrum of EUV light used for EUV lithography and mask inspection technology can be measured accurately.

Apparatus and method for calibrating extreme ultraviolet spectrometer

Disclosed are herein an apparatus and method for extreme ultraviolet (EUV) spectroscope calibration. The apparatus for EUV spectroscope calibration includes an EUV generating module, an Al filter, a diffraction grating, a CCD camera, a spectrum conversion module, and a control module that compares a wavelength value corresponding to a maximum peak among peaks of the spectrum depending on the order of the EUV light converted from the spectrum conversion module with a predetermined reference wavelength value depending on an order of high-order harmonics to calculate a difference value with the closest reference wavelength value, and controls the spectrum depending on the order of the EUV light converted from the spectrum conversion module to be moved in a direction of wavelength axis by the calculated difference value. Thus, it is possible to accurately measure a wavelength of a spectrum of EUV light used in EUV exposure technology and mask inspection technology.

Apparatus and method for extreme ultraviolet spectrometer calibration

A nanogap device for field enhancement is described, which includes: a film made of an electrically conductive material; and a nanogap formed on the film and having a gap-width between a Thomas-Fermi screening length and a skin depth, the Thomas-Fermi screening length and the skin depth being determined by an electromagnetic wave and the electrically conductive material, and system for nanoparticle detection using the device.

Nanogap device for field enhancement and a system for nanoparticle detection using the same

A filter having a high transmittance. The filter includes a substrate having a first surface and a second surface, and a periodic or random array of through-holes formed so as to pass through the first surface and the second surface. The through-hole has a size of subwavelength at a range of infrared and terahertz wave. Here, transmission resonance characteristic of incident light on the first surface is controlled by a shape of the through-hole.

Terahertz or infrared filter using shape resonance

Growing community of inventors

Seoul, South Korea

Min Ah Seo