Applied Materials, Inc.

Milind Gadre

Deenesh Padhi

Praket Prakash Jha

Abhijit Basu Mallick

Kwangduk Douglas Lee

Prashant Kumar Kulshreshtha

Ziqing Duan

Paul Dennis Connors

Xiaoquan Min

Jiarui Wang

Prashanth Kumar

Rui Cheng

Tza-Jing Gung

Shaunak Mukherjee

Lei Guo

A system includes a processing device, operatively coupled to the memory device, to perform operations comprising obtaining a plurality of sensor values associated with a deposition process performed, according to a recipe, in a process chamber to deposit film on a surface of a substrate. A machine-learning model is applied to the plurality of sensor values. The machine-learning model is trained based on historical sensor data of a sub-system of the process chamber and task data associated with the recipe for depositing the film. An output of the machine-learning model is generated that is indicative of a suspected failure of the sub-system and a corrective action is generated based on the suspected failure of the sub-system.

Systems and methods for adaptive troubleshooting of semiconductor manufacturing equipment

A method includes determining a plurality of dependencies associated with a plurality of tasks of a substrate processing system. The method further includes generating, based on the plurality of dependencies, a dependency graph of the plurality of tasks. The method further includes topologically sorting the dependency graph to generate one or more outputs. A schedule associated with processing a plurality of substrates in the substrate processing system is based on the one or more outputs.

Dynamic scheduling based on task dependencies

A system includes a processing device, operatively coupled to the memory device, to perform operations comprising obtaining a plurality of sensor values associated with a deposition process performed, according to a recipe, in a process chamber to deposit film on a surface of a substrate; generating a manufacturing data graph based on the plurality of sensor values; receiving, via a user interface, a selection of a data point on the manufacturing graph; receiving failure data associated with the data point; and storing, in a data structure, the failure data to be accessible via the user interface presenting the manufacturing data graph.

A method and apparatus for detecting and correcting incoming substrate deformation is disclosed. Substrates are positioned in a first process chamber, where the presence and type of substrate bow is detected. Based upon the detection of substrate bow, and a determination of whether the substrate has a compressive bow or a tensile bow, a substrate processing program is selected for execution. The substrate processing program can be executed in the first process chamber or in a second process chamber to correct or alleviate the bow prior to or during further processing of the substrate.

Substrate deformation detection and correction

Embodiments disclosed herein relate to methods for forming memory devices, and more specifically to improved methods for forming a dielectric encapsulation layer over a memory material in a memory device. In one embodiment, the method includes thermally depositing a first material over a memory material at a temperature less than the temperature of the thermal budget of the memory material, exposing the first material to nitrogen plasma to incorporate nitrogen in the first material, and repeating the thermal deposition and nitrogen plasma operations to form a hermetic, conformal dielectric encapsulation layer over the memory material. Thus, a memory device having a hermetic, conformal dielectric encapsulation layer over the memory material is formed.

SiBN film for conformal hermetic dielectric encapsulation without direct RF exposure to underlying structure material

Embodiments of the present disclosure generally relate to methods and apparatus for depositing metal silicide layers on substrates and chamber components. In one embodiment, a method of forming a hardmask includes positioning the substrate having a target layer within a processing chamber, forming a seed layer comprising metal silicide on the target layer and depositing a tungsten-based bulk layer on the seed layer, wherein the metal silicide layer and the tungsten-based bulk layer form the hardmask. In another embodiment, a method of conditioning the components of a plasma processing chamber includes flowing an inert gas comprising argon or helium from a gas applicator into the plasma processing chamber, exposing a substrate support to a plasma within the plasma processing chamber and forming a seasoning layer including metal silicide on an aluminum-based surface of the substrate support.

Deposition of metal silicide layers on substrates and chamber components

Aspects disclosed herein relate to methods of depositing pure silicon oxide on a substrate using Octamethylcyclotetrasiloxane (OMCTS) precursor. In one aspect, the method generally includes positioning a substrate in a processing chamber, introducing an oxygen-containing gas into the processing chamber, introducing OMCTS precursor into the processing chamber, and reacting the oxygen-containing gas and the OMCTS precursor to remove carbon and deposit pure silicon oxide on the substrate.

Oxide with higher utilization and lower cost

Implementations described herein generally relate to the fabrication of integrated circuits and particularly to the deposition of a boron-doped amorphous silicon (a-Si) layers on a semiconductor substrate. In one implementation, a method is provided. The method comprises generating a pressure within a processing volume between 2 Torr and 60 Torr. The method further comprises heating a substrate in the processing volume to a temperature between 300 degrees Celsius and 550 degrees Celsius. The method further comprises flowing a silane-containing gas mixture into the processing volume having the substrate positioned therein. The method further comprises flowing a borane-containing gas mixture into the processing volume having the substrate positioned therein and depositing a boron-doped amorphous silicon layer on the substrate.

Method of depositing doped amorphous silicon films with enhanced defect control, reduced substrate sensitivity to in-film defects and bubble-free film growth

Implementations described herein generally relate to the fabrication of integrated circuits and particularly to the deposition of a boron-doped amorphous silicon layers on a semiconductor substrate. In one implementation, a method of forming a boron-doped amorphous silicon layer on a substrate is provided. The method comprises depositing a predetermined thickness of a sacrificial dielectric layer over a substrate, forming patterned features on the substrate by removing portions of the sacrificial dielectric layer to expose an upper surface of the substrate, depositing conformally a predetermined thickness of a boron-doped amorphous silicon layer on the patterned features and the exposed upper surface of the substrate and selectively removing the boron-doped amorphous silicon layer from an upper surface of the patterned features and the upper surface of the substrate using an anisotropic etching process to provide the patterned features filled within sidewall spacers formed from the boron-doped amorphous silicon layer.

Growing community of inventors

Los Altos, CA, United States of America

Milind Gadre