Micron Technology Incorporated

Miles S Wiscombe

Gary L Howe

Debra M Bell

James S Rehmeyer

Eric J Stave

Vaughn N Johnson

Kyle Alexander

Brian W Huber

Brian Thomas Pecha

Tony M Brewer

Scott Eugene Smith

Brian T Pecha

Timothy Mowry Hollis

Baekkyu Choi

Yogesh Sharma

Methods, apparatuses, and systems related to voltage management of memory apparatuses/systems are described. The memory device can include circuitry configured to determine an operating frequency of a clock signal for an ongoing or an upcoming memory operation. The memory device may generate a control indicator for increasing a system voltage for higher operating frequencies, for decreasing the system voltage for lower operating frequencies, or a combination thereof.

Apparatus with data-rate-based voltage control mechanism and methods for operating the same

Methods, systems, and devices for power management for a memory device are described. For example, a memory device may include one or more memory dies and may be configured to operate using a first supply voltage and a second supply voltage. The first supply voltage may be associated with a first defined voltage range, and the second supply voltage may be associated with a second defined voltage range. The memory device may include a power management integrated circuit (PMIC) that is coupled with the one or more memory dies and provides the supply voltages to the one or more memory dies. The PMIC may be configured to provide, to the one or more memory dies, a first voltage that is within the first defined voltage range as the first supply voltage and a second voltage that is outside the second defined voltage range as the second supply voltage.

Power management for a memory device

Memory devices and systems with programmable refresh order and stagger times are disclosed herein. In one embodiment, a memory device includes a first memory bank group and a second memory bank group. The memory device is configured, in response to a refresh command, to perform a first refresh operation on the first memory bank group at a first time and a second refresh operation on the second memory bank group at a second time after the first time. The memory device is further configured to perform, in response to a read or write command, a read or write operation on the first memory bank group, the second memory bank group, or both the first and second memory bank groups after beginning the first refresh operation and before completing the second refresh operation.

Memory with programmable refresh order and stagger time

Memory devices and systems with improved command/address bus utilization are disclosed herein. In one embodiment, a memory device comprises a plurality of external command/address terminals and a command decoder. The plurality of external command/address terminals are configured to receive a command as a corresponding plurality of command/address bits. A first set of the command/address bits indicate a read or write operation. A second set of the command/address bits indicate whether to execute a refresh operation. The memory device is configured to, in response to the first set of command/address bits, execute the read or write operation on a portion of a memory array. The memory device is further configured to, in response to the second set of command/address bits, execute the refresh operation to refresh at least one memory bank of the memory array when the second set of command/address bits indicate that the refresh operation should be executed.

Memory with improved command/address bus utilization

Memory devices, systems including memory devices, and methods of operating memory devices are described, in which memory devices are configured to provide row clear features. In some embodiments, the memory device may receive a command from a host device directed to a row of a memory array included in the memory device. The memory device may determine that the command is directed to two or more columns associated with the row, where each column is coupled with a group of memory cells. The memory device may activate the row to write the two or more columns using a set of predetermined data stored in a register of the memory device. Subsequently, the memory device may deactivate the word line based on writing the set of predetermined data to the two or more columns.

Row clear features for memory devices and associated methods and systems

Methods, systems, and devices for voltage adjustment based on, for example, pending refresh operations are described. A memory device may periodically perform refresh operations to refresh volatile memory cells and may at times postpone performing one or more refresh operations. A memory device may determine a quantity of pending (e.g., postponed) refresh operations, such as by determining a quantity of refresh intervals that have elapsed without receiving or executing a refresh command, among other methods. A memory device may pre-emptively adjust (or cause to be adjusted) a supply voltage associated with the memory device or memory device component based on the quantity of pending refresh operations to prepare for the current demand associated with the performing the one or more pending refresh operations. For example, the memory device may increase a supply voltage associated with one or more components to prepare for performing multiple pending refresh operations.

Voltage adjustment based on pending refresh operations

Memory devices, systems including memory devices, and methods of operating memory devices are described, in which memory devices are configured to conditionally activate certain rows during refresh operations such that the memory devices can execute operations directed to the activated rows concurrently with the refresh operations. In some embodiments, the memory device receives an activate (ACT) command directed to a section of a memory bank while performing refresh operations for the memory bank. The memory device may carry out the ACT command if certain conditions are satisfied not to corrupt the data being refreshed. Subsequently, the memory device generates a signal to indicate the ACT command has been accepted to activate a row identified by the ACT command. Further, the memory device can perform subsequent access commands directed to the row, in parallel with the refresh operations.

Growing community of inventors

Boise, ID, United States of America

Miles S Wiscombe