Intel Corporation

Milan Keser

Boyd L Coomer

Kevin M Lenio

A porous aluminum anode is used in a capacitor. The porous anode is constructed by a solid freeform fabrication (SFF) process and has a plurality of pores. Each of the plurality of pores has a pore size. An electrolyte is infiltrated in the plurality of pores. An oxide layer is formed on the aluminum surface to provide a dielectric for the capacitor.

High surface area porous aluminum electrode in electrolytic capacitors using solid freeform fabrication

A method and apparatus for making an imprinted conductive circuit using semi-additive plating. A plurality of indented channels is formed on the substrate. The surface is coated with a conductive layer. Portions of the surface other than the indented channels are coated with a non-conductive layer, and metal is plated on the conductive layer in the channels. The non-conductive layer and the first conductive layer are removed from portions of the surface other than the indented channels. In some embodiments, a first set of channels has a first depth and a second set of channels has a second depth. The plating adds a first amount of metal in the first set of channels and the second set of channels. The first set of channels is coated with a non-conductive layer, and a second amount of additional conductive material is plated in the second set of channels.

Method and apparatus for making an imprinted conductive circuit using semi-additive plating

Apparatus and systems, as well as fabrication methods therefor, may include a component having a plurality of contacts substantially equally spaced apart from each other by a first distance along a first line coupled to an angled parallel conductor group having a plurality of conductors substantially equally spaced apart from each other by a second distance less than the first distance along a second line.

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Chandler, AZ, United States of America

Milan Keser