Hitachi Energy Ltd

Ansaldo Energia Switzerland Ag

Abb Power Grids Switzerland Ag

Hitachi Energy Switzerland Ag

Milad Maleki

Dominik Truessel

Harald Beyer

Fabian Fischer

Lluis Santolaria

Thomas Gradinger

Daniele Torresin

Samuel Hartmann

Dominik Trüssel

David Guillon

Daniel Schneider

Robert Przybyl

Niko Pavlicek

Thomas Huber

Remi-Alain Guillemin

Robert Gade

Athanasios Mesemanolis

Antoni Ruiz

Remi Alain Guillemin

A power semiconductor component with power semiconductor modules connected to a cooling structure, and a cooling chamber having an inlet and outlet port, and adapted for a flow direction of a coolant substance from the inlet port to the outlet port, each of the cooling structures provided within the cooling chamber consecutively in the flow direction forming a flow resistance region in the cooling chamber, the cooling chamber comprises a bypass region connected in parallel to at least one of the flow resistance regions being closer to the inlet port, and is adapted for a flow rate of the at least one flow resistance region, which is connected in parallel to the bypass region, closer to the inlet port being smaller than a flow rate of one of the at least two flow resistance regions closer to the outlet port.

Power semiconductor component

In one embodiment, a pre-product is configured for an electronic device intended to be loaded with a maximum current of at least 10 A, and comprises: an electronic component, a plurality of power terminals for external electrical contacting the electronic device, and a slide rail at an end of the at least one assigned power terminal remote from the electronic component. The power terminals are electrically connected to the electronic component and extend in a direction away from the electronic component. The slide rail is integrated in a metallic first leadframe together with at least one of the power terminals. A weight of the pre-product is at least 0.1 kg.

Pre-product, method and electronic device

A power module having an alignment part fixed on a lateral top surface (10T) of a semiconductor module component. The semiconductor module component has at least one terminal which—at least in places—is orientated vertically with respect to the lateral top surface of the semiconductor module component and for the purpose of alignment along lateral directions, is located at least partly within the at least one recessed portion. Along a vertical direction, the at least one terminalprotrudes beyond the at least one recessed portion. The at least one recessed portion is located on a side surface of the alignment part, wherein the at least one recessed portion is a vertical slot being an open recess on the side surface of the alignment part, and wherein the slot is not a through-hole being completely surrounded by inner walls of the at least one recessed portion in lateral directions.

Power module comprising a semiconductor module component and an alignment part, and method for forming the power module

An apparatus includes a baseplate and a cooler providing a cooling channel adapted for providing a coolant flow. An electronic circuit includes a power semiconductor device disposed at the first side of baseplate. A footprint of the power semiconductor device defines a device area on the first side. A cooling area at the second side of the baseplate opposite the device area is adapted for dissipating heat from the baseplate by bringing the cooling area into thermal contact with the coolant flow in the cooling channel. An auxiliary area is located on the second side of the baseplate adjacent to the cooling area. The auxiliary area includes a flow guide for reducing a flow rate of the coolant flow in the auxiliary area and the cooling channel is adapted to receive the cooling area and the flow guide.

Arrangement comprising a baseplate for a power semiconductor module and a cooler

A power semiconductor module includes a baseplate that has a first region at a first side located adjacent to an edge of the baseplate and proceeding in a first plane. An encapsulation material covers portions of the baseplate so that the first region of the baseplate is free of the encapsulation material and the baseplate at the edge side adjacent to the first region is at least partly covered by the encapsulation material. The baseplate at its first side is configured for being provided with an electric circuit and the baseplate at its second side is configured for being brought into contact to a heat dissipating element by applying a clamping force with a clamping part to the first region.

Power semiconductor module with baseplate and heat dissipating element

A power semiconductor module includes an insulating substrate with a top metallization layer; a semiconductor chip bonded to the top metallization layer; and a terminal welded with a foot to the top metallization layer and electrically interconnected to the semiconductor chip. At least one of the top metallization layer and a bottom metallization layer of the substrate provided opposite to the top metallization layer comprises a plurality of dimples, which are distributed in a connection region below and/or around the welded foot.

Power semiconductor module with dimples in metallization layer below foot of terminal

A gas turbine membrane seal is disclosed. The gas turbine membrane seal includes a membrane, the membrane configured and arranged to extend from a first gas turbine component to a second gas turbine component and to separate two volumes, and an anti-fretting part configured and arranged to be attached to the first gas turbine component. A face of the anti-fretting part is adjacent to the membrane, and the face of the anti-fretting part is convex. Further embodiments of the gas turbine membrane seal are also described, along with a gas turbine having the gas turbine membrane seal and a retrofitting method.

Gas turbine membrane seal

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Baden, Switzerland

Milad Maleki