Kioxia Corporation

Mikiya Sakashita

Yukiteru Matsui

Akifumi Gawase

Yumiko Kataoka

A polishing solution according to an embodiment includes an exothermic agent that generates heat through application of an alternating magnetic field thereto, and a viscosity modifier that undergoes a reversible phase transition between a gel state and a sol state depending on temperature.

Polishing solution, polishing apparatus, and polishing method

According to one embodiment, a polishing method includes supplying a polishing agent to be between a polishing pad and to-be-polished surface, then polishing the to-be-polished surface with the polishing agent while rotating at least one of the to-be-polished surface and the polishing pad. The polishing agent includes abrasive grains and an organic polymer. The organic polymer makes a reversible phase transition between a gel state and a sol state depending on temperature.

Polishing method, polishing agent and cleaning agent for polishing

According to one embodiment, a polishing apparatus includes a holder for holding a polishing pad for polishing a surface of a substrate. A plurality of pressing members are configured to press a back surface side of the polishing pad while held by the holder. A driving unit is configured to selectively move pressing members in a direction towards the surface of the substrate so as to press the back surface side of the polishing pad.

Polishing device, polishing head, polishing method, and method of manufacturing semiconductor device

A method for manufacturing a semiconductor device according to an embodiment includes: forming a first layer on a semiconductor substrate, a surface of the first layer having a first plane of which distance from the semiconductor substrate is a first distance and a second plane of which distance from the semiconductor substrate is a second distance smaller than the first distance, and a difference between the first distance and the second distance being 30 nm or more; performing planarization processing on the first layer to have the difference of less than 30 nm; forming a second layer directly on the first layer after performing the planarization processing; supplying a resist to the second layer; bringing a template having a pattern into contact with the resist to form a resist layer to which the pattern has been transferred; and etching the second layer using the resist layer as a mask.

Growing community of inventors

Nagoya, Japan

Mikiya Sakashita