Osaka University

Panasonic Holdings Corporation

Mikito Nozaki

Heiji Watanabe

Takayoshi Shimura

Takuji Hosoi

Takahiro Yamada

Yoshiharu Anda

Satoshi Nakazawa

Naohiro Tsurumi

Hong-An Shih

A semiconductor device including: a metal-insulator-semiconductor (MIS) structure that includes a nitride semiconductor layer, a gate insulator film, and a gate electrode stacked in stated order; and a source electrode and a drain electrode that are disposed to sandwich the gate electrode in a plan view and contact the nitride semiconductor layer. The gate insulator film includes a threshold value control layer that includes an oxynitride film.

Semiconductor device

A semiconductor device () includes a base layer (), an interface layer (), and a deposition layer (). The base layer () includes a nitride semiconductor that contains gallium. The interface layer () is adjacent to the base layer (). The interface layer () contains gallium oxide. The deposition layer () is adjacent to the interface layer (). The deposition layer () has a wider band gap than the interface layer (). The interface layer () preferably has crystallinity. The interface layer () preferably contains &#x3b1;-phase GaO.

Semiconductor device and method for manufacturing semiconductor device

Growing community of inventors

Osaka, Japan

Mikito Nozaki