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Ishikawajima-Harima Heavy Industries Co., Ltd.

Mikito Ishii

Koichiro Tanaka

Atsushi Yoshinouchi

Norihito Kawaguchi

Miyuki Masaki

Kenichiro Nishida

Takehito Yagi

Setsuo Nakajima

An object of the present invention is to provide a laser annealing method and apparatus capable of performing uniform beam emission. By means of the present invention, uniform beam application to a sample can be achieved because a linear cross-sectional configuration can be created in an optical system with a beam having a Gaussian distribution while areas of strong light intensity are avoided by rotating the beam from a laser light source at a prescribed angle by means of rotating means even when the beam pattern of the beam from the laser light source has a non-uniform intensity distribution.

Method and apparatus for laser annealing configurations of a beam

A laser irradiation apparatus having a low running cost compared to the conventional, and a laser irradiation method using the laser irradiation apparatus, are provided. Crystal grains having a size in the same order as, or greater than, conventional grains are formed. The cooling speed of a semiconductor film is made slower, and it becomes possible to form crystal grains having a grain size in the same order as, or greater than, the size of grains formed in the case of irradiating laser light having a long output time to the semiconductor film. This is achieved by delaying one laser light with respect to another laser light, combining the laser lights, and performing irradiation to the semiconductor film in the case of irradiating laser light using a solid state laser as a light source, which has a short output time.

Laser irradiation apparatus and method of laser irradiation

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Yokohama, Japan

Mikito Ishii