Shin-Etsu Chemical Co., Ltd.

Toppan Printing Co., Ltd.

Mikio Takagi

Yukio Inazuki

Hiroki Yoshikawa

Satoshi Okazaki

Takashi Haraguchi

Yuichi Fukushima

Tadashi Saga

Masahide Iwakata

Toshinobu Ishihara

Yoshinori Kinase

Kimihiro Okada

Yoshinori c/o Shin-Etsu Chemical Co Ltd Kinase

Satoshi c/o Shin-Etsu Chemical Co Ltd Okazaki

Yukio c/o Shin-Etsu Chemical Co Ltd Inazuki

Hiroki c/o Shin-Etsu Chemical Co Ltd Yoshikawa

A photomask blank to be used as a material for a photomask is provided with a mask pattern having a transparent area and an effectively opaque area to exposure light on a transparent substrate. On the transparent board, one or more layers of light shielding films are formed with or without other film (A) in between, at least one layer (B) which constitutes the light shielding film includes silicon and a transition metal as main component, and a molar ratio of silicon to the transition metal is silicon:metal=4-15:1 (atomic ratio). The photomask provided with the mask pattern having the transparent area and the effectively opaque area to exposure light on the transparent board is also provided.

Photomask blank and photomask

A metal film is provided as a light shielding layer on one principle surface of a photomask substrate. The metal film cannot be substantially etched by chlorine-based dry etching containing oxygen ((Cl+O)-based dry etching) and can be etched by chlorine-based dry etching not containing oxygen (Cl-based dry etching) and fluorine-based dry etching (F-based dry etching). On the light shielding layer, a metal compound film as an antireflective layer. The metal compound film cannot be substantially etched by chlorine-based dry etching not containing oxygen (Cl based) and can be etched by at least one of chlorine-based dry etching containing oxygen ((Cl+O) based) and fluorine-based dry etching (F based).

Photomask blank, photomask and method for producing those

In a halftone phase shift mask blank comprising a substrate, a light absorbing film, and a phase shifter film, the light absorbing film contains a metal element of Group 4A in a distribution having a higher metal element content in an upper region than in a lower region. Also provided is a halftone phase shift mask blank comprising a transparent substrate and a halftone phase shift film of a single layer or multiple layers having a preselected phase difference and transmittance, wherein at least one layer of the halftone phase shift film contains at least 90 atom % of silicon and a plurality of metal elements, typically Mo and Zr or Hf.

Halftone phase shift mask blank, halftone phase shift mask, and pattern transfer method

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Tokyo, Japan

Mikio Takagi