Sanyo Electric Co., Ltd.

Panasonic Intellectual Property Management Co., Ltd.

Mikio Taguchi

Akira Terakawa

Noboru Nakamura

Toshio Asaumi

Satoru Shimada

Shoji Sato

Naoki Yoshimura

Kunihiro Kawamoto

A plurality of finger electrodes are disposed on a surface of a photoelectric conversion layerand extend in a first direction. The plurality of finger electrodes are arranged in a second direction in which an inter-cell wiring member adapted to be disposed on the surface of the photoelectric conversion layer extends. A height of each of those of the plurality of finger electrodes disposed toward ends in the second direction from a part of the photoelectric conversion layer where the inter-cell wiring member is adapted to be disposed is larger than a height of the finger electrode disposed at a center in the second direction from the part of the photoelectric conversion layer where the inter-cell wiring member is adapted to be disposed.

Solar cell, solar cell module, and solar cell manufacturing method in which wiring member is connected to surface

In a photovoltaic device comprising a thin intrinsic amorphous semiconductor film inserted in a junction portion of a crystalline semiconductor substrate and an amorphous semiconductor film which have conductive types reverse to each other, an optical band gap of the intrinsic amorphous semiconductor film is expanded on a side in contact with the amorphous semiconductor film.

Photovoltaic device with intrinsic amorphous film at junction, having varied optical band gap through thickness thereof

A photovoltaic device having a crystalline semiconductor and an amorphous semiconductor thin film so that junction characteristics can be upgraded. The photovoltaic device includes an i-type amorphous silicon thin film and a p-type amorphous silicon thin layer laminated in this order on a front surface of an n-type single crystalline silicon substrate, and an i-type amorphous silicon layer and an n-type amorphous silicon layer laminated in this order on a rear surface of the single crystalline silicon substrate, wherein an i-type amorphous silicon film is formed after the front surface of the single crystalline silicon substrate is exposed to a plasma discharge using mixed gas of hydrogen gas and a gas containing boron so that atoms of boron may be interposed on an interface between the single crystalline silicon substrate and the i-type amorphous silicon layer.

Photovoltaic device and manufacturing method thereof

Growing community of inventors

Hirakata, Japan

Mikio Taguchi