Trecenti Technologies, Inc.

Mikio Shimizu

A technique capable of preventing breakage of a semiconductor wafer in a single-wafer RTP apparatus is provided. Open-loop control is made in a temperature rising process, in which the temperature of the semiconductor wafer is 500&#xb0; C. or lower, and a revolution speed of the semiconductor wafer is relatively reduced to 100 rpm or lower even if the bowing of the semiconductor wafer occurs. Therefore, a centrifugal force exerted on the semiconductor wafer is reduced, whereby it becomes possible to prevent the semiconductor wafer from dropping from a stage of the single-wafer RTP apparatus. Additionally, closed-loop control is made in the temperature rising process, in which the temperature of the semiconductor wafer is higher than 500&#xb0; C., and in a main treatment process, and further the revolution speed of the semiconductor wafer is relatively increased. By so doing, the almost uniform in-plane temperature of the semiconductor wafer can be achieved and the bowing of the semiconductor wafer can be prevented.

Method of manufacturing semiconductor device using thermal treatment that features lower speed wafer rotation at low temperatures and higher speed wafer rotation at high temperatures

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Higashiibaraki, Japan

Mikio Shimizu