Canon Kabushiki Kaisha

Fuji Chemical Company, Limited

Kyoto University

University of Yamanashi

Mikio Shimada

Tatsuya Suzuki

Makoto Kubota

Jumpei Hayashi

Takanori Matsuda

Toshihiro Ifuku

Tatsuo Furuta

Hisato Yabuta

Toshiaki Aiba

Kenji Maeda

Kazuhiro Yamauchi

Yasushi Shimizu

Masahiro Watanabe

Kenji Takashima

Yuichi Kikuchi

Tetsuo Hino

Chiemi Shimizu

Soichiro Kawakami

Kenichi Takeda

Akio Kashiwazaki

Satoshi Wada

Ryo Hayashi

Hideaki Takahashi

Satoru Nishioka

Kanako Oshima

Masami Tsukamoto

Fumio Uchida

Norifumi Muranaka

Takayuki Watanabe

Hidenori Tanaka

Hideya Kumomi

Shinya Koyama

Akira Uebayashi

Masatoshi Watanabe

Takashi Noma

Nobuhiro Kumada

Rie Ueno

Yoshitaka Nakamura

Masaki Azuma

Norishige Kakegawa

Yuichi Shimakawa

Masanori Kawai

Ichiro Fujii

Ryuta Mitsui

Kaoru Ojima

Chiaki Arii

Provided is a piezoelectric ceramics including crystal grains each including: a first region that is formed of a perovskite-type metal oxide having a crystal structure in which a central element of a unit cell is located at an asymmetrical position; and a second region that is formed of a perovskite-type metal oxide having a crystal structure in which a central element of a unit cell is located at a symmetrical position, and that is present inside the first region, wherein a ratio of a cross-sectional area of the second region to a cross-sectional area of the piezoelectric ceramics is 0.1% or less.

Piezoelectric ceramics, piezoelectric element, and electronic apparatus

Provided are a barium titanate-based piezoelectric ceramics having satisfactory piezoelectric performance and a satisfactory mechanical quality factor (Q), and a piezoelectric element using the same. Specifically provided are a piezoelectric ceramics, including: crystal particles; and a grain boundary between the crystal particles, in which the crystal particles each include barium titanate having a perovskite-type structure and manganese at 0.04% by mass or more and 0.20% by mass or less in terms of a metal with respect to the barium titanate, and the grain boundary includes at least one compound selected from the group consisting of BaTiOand BaTiO, and a piezoelectric element using the same.

Manufacturing method for piezoelectric ceramics

A piezoelectric element having an improved piezoelectric constant is provided, and a liquid discharge head, an ultrasonic motor, and a dust removing device, each of which uses the above piezoelectric element, are also provided. A piezoelectric element at least includes a pair of electrodes and a piezoelectric material provided in contact with the pair of electrodes, the piezoelectric material is formed of an aggregate of crystal grains containing barium titanate as a primary component, and among the crystal grains of the aggregate, crystal grains at least in contact with the electrodes have dislocation layers in the grains. A liquid discharge head, an ultrasonic motor, and a dust removing device each use the above piezoelectric element.

Piezoelectric element, liquid discharge head, ultrasonic motor, and dust removing device

A piezoelectric ceramic includes: a metal oxide represented by General Formula (1); and 0.04 parts by weight or more and 0.36 parts by weight or less of Mn and 0.042 parts by weight or more and 0.850 parts by weight or less of Bi on a metal basis relative to 100 parts by weight of the metal oxide, wherein the piezoelectric ceramic includes a plurality of first crystal grains having a perovskite structure, and a plurality of second crystal grains provided at a grain boundary between the first crystal grains and having a crystal structure different from that of the first crystal grain, and the second crystal grain mainly contains at least one metal oxide selected from BaTiOand BaTiO.(BaCa)(TiZr)O&#x2003;&#x2003;(1)

Piezoelectric ceramic, piezoelectric element, and electronic appliance

Provided is an electroconductive member configured to suppress a void image caused by abnormal discharge and a horizontal streak-like image caused by downstream discharge without depending on the thickness of a photosensitive layer of a photosensitive drum over a long period of time. The electroconductive member for electrophotography comprises at least an electroconductive support and a surface layer formed on an outer side of the electroconductive support. The surface layer includes a porous body and satisfies the predetermined (1), (2), and (3).

Electroconductive member for electrophotography, process cartridge, and electrophotographic apparatus

Provided are a piezoelectric thin film having good piezoelectricity in which a rhombohedral structure and a tetragonal structure are mixed, and a piezoelectric element using the piezoelectric thin film. The piezoelectric thin film includes a perovskite type metal oxide, in which the perovskite type metal oxide is a mixed crystal system of at least a rhombohedral structure and a tetragonal structure, and a ratio between an a-axis lattice parameter and a c-axis lattice parameter of the tetragonal structure satisfies 1.15&#x2266;c/a&#x2266;1.30. The piezoelectric element includes on a substrate: the above-mentioned piezoelectric thin film; and a pair of electrodes provided in contact with the piezoelectric thin film.

Piezoelectric thin film, piezoelectric element, and manufacturing method thereof

Provided is a lead-free piezoelectric ceramics having enhanced mechanical quality factor (Qm) and mechanical strength. The piezoelectric ceramics, includes at least a first crystal grain and a second crystal grain. The first crystal grain has an average equivalent circle diameter of 2 &#x3bc;m or more and 30 &#x3bc;m or less. The first crystal grain includes a perovskite-type metal oxide represented by the following general formula (1) as a main component, and the second crystal grain includes a perovskite-type metal oxide represented by the following general formula (2) as a main component: (1) xBaTiO-yCaTiO-zCaZrO; and (2) x'BaTiO-y&#x2032;CaTiO-z&#x2032;CaZrO, provided that x, y, z, x&#x2032;, y&#x2032;, and z&#x2032; satisfy x+y+z=1, x&#x2032;+y&#x2032;+z&#x2032;=1, 0&#x2266;x&#x2032;&#x2266;0.15, 0.85&#x2266;y&#x2032;&#x2266;1, 0&#x2266;z&#x2266;0.05, x&#x3e;x&#x2032;, 0&#x3c;y&#x3c;y&#x2032;, and z&#x3e;0.

Piezoelectric ceramics, piezoelectric element, liquid ejection head, ultrasonic motor, and dust removing device

Provided is a piezoelectric material that achieves both high piezoelectric performance and high Curie temperature. In addition, provided are a piezoelectric element, a liquid discharge head, an ultrasonic motor, and a dust removing device, which use the piezoelectric material. The piezoelectric material includes a perovskite-type metal oxide that is expressed by the following general formula (1): xBaTiO-yBiFeO-zBi(MTi)O(1), where M represents at least one type of element selected from the group consisting of Mg and Ni, x satisfies 0.25&#x2266;x&#x2266;0.75, y satisfies 0.15&#x2266;y&#x2266;0.70, z satisfies 0.05&#x2266;z&#x2266;0.60, and x+y+z=1 is satisfied.

Piezoelectric material, piezoelectric element, liquid discharge head, ultrasonic motor, and dust removing device

Piezoelectric ceramics, manufacturing method therefor, piezoelectric element, liquid discharge head, ultrasonic motor, and dust removal device

It is an object of the present invention to provide an electroconductive member for electrophotography capable of suppressing image density unevenness caused by the adhesion of foreign matter. Provided is an electroconductive member for electrophotography, including at least: an electroconductive support, and a surface layer formed on an outer side of the electroconductive support, in which the surface layer includes a porous body, and in which the porous body satisfies the following conditions (1) to (3): (1) the porous body has a co-continuous structure including at least a skeleton that is three-dimensionally continuous and a pore that is three-dimensionally continuous; (2) the porous body has electroconductivity; and (3) an average diameter of a maximum inscribed circle of an opening of the pore on a surface of the porous body is 3 &#x3bc;m or more and 8 &#x3bc;m or less.

Provided is a lead-free dielectric ceramics having a low leakage current value, and a bismuth iron oxide powder as a raw material thereof. The bismuth iron oxide powder includes at least: (A) grains including a bismuth iron oxide having a perovskite-type crystal structure; (B) grains including a bismuth iron oxide having a crystal structure classified to a space group Pbam; and (C) grains including a bismuth iron oxide or a bismuth oxide having a crystal structure that is classified to a space group I23. The dielectric ceramics are made of bismuth iron oxide in which the bismuth iron oxide crystals having the crystal structure classified to the space group Pbam are distributed at a grain boundary of crystal grains of the bismuth iron oxide crystals having the perovskite-type crystal structure.

Bismuth iron oxide powder, manufacturing method for the bismuth iron oxide powder, dielectric ceramics, piezoelectric element, liquid discharge head, and ultrasonic motor

A method of producing a material capable of electrochemically storing and releasing a large amount of lithium ions is provided. The material is used as an electrode material for a negative electrode, and includes silicon or tin primary particles composed of crystal particles each having a specific diameter and an amorphous surface layer formed of at least a metal oxide, having a specific thickness. Gibbs free energy when the metal oxide is produced by oxidation of a metal is smaller than Gibbs free energy when silicon or tin is oxidized, and the metal oxide has higher thermodynamic stability than silicon oxide or tin oxide. The method of producing the electrode material includes reacting silicon or tin with a metal oxide, reacting a silicon oxide or a tin oxide with a metal, or reacting a silicon compound or a tin compound with a metal compound to react with each other.

Method of producing lithium ion-storing/releasing material, lithium ion-storing/releasing material, and electrode structure and energy storage device using the material

A transistor is constituted of a gate electrode, a gate insulation layer, a semiconductor layerformed of an amorphous oxide, a source electrode, a drain electrodeand a protective layer. The protective layeris provided on the semiconductor layerin contact with the semiconductor layer, and the semiconductor layerincludes a first layer at least functioning as a channel layer and a second layer having higher resistance than the first layer. The first layer is provided on the gate electrodeside of the semiconductor layerand the second layer is provided on the protective layerside of the semiconductor layer

Thin film transistor having a two-layer semiconductor with columnar structures, manufacturing method therefor, and display apparatus using the same

A transistor includes a gate electrode, a gate insulating layer, a semiconductor layer including an amorphous oxide, source-drain electrodes, and a protective layer on a substrate. The semiconductor layer includes a first region corresponding to a region in which the source-drain electrodes are formed, and a second region not corresponding to the region in which the source-drain electrodes are formed. At least the first region includes a crystalline component having a composition different from the composition of the amorphous oxide in the second region.

Oxide semiconductor thin-film transistor

Growing community of inventors

Tokyo, Japan

Mikio Shimada