Kabushiki Kaisha Toshiba

Toshiba Matsushita Display Technology Co., Ltd.

Mikio Nakasuji

Shinya Nunoue

Shinji Saito

Kazuhiko Itaya

Kazushige Yamamoto

Hidetoshi Fujimoto

Genichi Hatakoshi

Masaaki Onomura

Masahiro Yamamoto

Katsunobu Sasanuma

Risa Sugiura

There is provided an organic EL element including an anode, a cathode, and an organic layer, wherein the cathode includes a protective conductor layer which faces the organic layer, a main conductor layer which is interposed between the protective conductor layer and the organic layer, and a barrier layer which is interposed between the protective conductor layer and the main conductor layer and made of an insulator or a semiconductor.

Organic EL element and organic EL display

A semiconductor laser is formed of gallium nitride series compound semiconductor and has a double hetero structure including an MQW (multiple quantum well) active layer held between p-type and n-type AlGaN clad layers. The double hetero structure is held between p-type and n-type contact layers. An InGaN optical absorption layer having an optical absorption coefficient larger than the clad layer which has the same conductivity type as the contact layer and is formed adjacent to the contact layer is formed in at least one of the contact layers and an InAlGaN optical guided mode control layer (layer of small refractive index) having an refractive index smaller than the clad layer is formed on the exterior of the optical absorption layer.

Semiconductor laser using gallium nitride series compound semiconductor

Growing community of inventors

Kawasaki, Japan

Mikio Nakasuji