Tokyo Electron Limited

Hisamitsu Pharmaceutical Company, Inc.

Mikio Nakashima

Yuji Kamikawa

Hiroaki Inadomi

Hideki Nishimura

Akinori Tanaka

Osamu Tsuda

Takayuki Toshima

Mitsuaki Iwashita

Nobuhiro Ogata

Kanji Noda

Satoshi Morita

Kazuyoshi Shinohara

Hiroshi Komiya

Satoshi Okamura

Masaru Saita

Ikuo Sunaka

Shota Umezaki

Isamu Miyamoto

Kenji Nakamizo

Yasuaki Taniguchi

Terumi Hachiya

Masayoshi Tsuji

Hisataka Inoue

Yoshiki Deguchi

Hiroyuki Higashi

Ryoji Ando

Shoji Hamanaka

Shigenori Yahiro

Shozou Maeda

Kazuhiko Kobayashi

Kousuke Fukuda

Katsuya Koga

Youichi Masaki

Yuusuke Takamatsu

Nobutaka Kuroda

Kosuke Fukuda

A substrate processing apparatus includes a processing vessel; and a processing fluid supply configured to supply a processing fluid in a supercritical state into the processing vessel. The processing fluid supply includes a fluid supply line; a cooling device provided in the fluid supply line, and configured to cool the processing fluid in a gas state to produce the processing fluid in a liquid state; a pump positioned downstream of the cooling device; a heating device positioned downstream of the pump, and configured to heat the processing fluid in the liquid state to generate the processing fluid in the supercritical state; a first flow rate adjuster positioned between the pump and the heating device, and configured to adjust a supply flow rate of the processing fluid supplied to the processing vessel; and a controller configured to control the first flow rate adjuster.

Substrate processing apparatus and substrate processing method

A substrate liquid processing apparatus includes: at least one liquid pipe through which a processing liquid flows; a discharge nozzle configured to discharge the processing liquid supplied via the at least one liquid pipe; a valve mechanism configured to regulate a flow of the processing liquid in the at least one liquid pipe; and a liquid detection sensor configured to detect presence or absence of the processing liquid in the at least one liquid pipe, wherein in a state in which the valve mechanism is operating so that the processing liquid in the at least one liquid pipe is located at an upstream of a first pipe measurement site of the at least one liquid pipe, the liquid detection sensor detects the presence or absence of the processing liquid at the first pipe measurement site located at a first measurement point.

Substrate liquid processing apparatus and substrate liquid processing method

A processing apparatus includes a chamber configured to accommodate a substrate to be processed, a nozzle provided in the chamber and configured to supply a processing solution to the substrate, a flow rate measuring part configured to measure a flow rate of the processing solution supplied to the nozzle, a flow path opening/closing part configured to open and close a supply flow path of the processing solution to the nozzle, and a controller configured to output a close signal causing the flow path opening/closing part to perform a closing operation that closes the supply flow path. The controller is configured to detect an operation abnormality of the flow path opening/closing part based on an accumulated amount of the flow rate measured by the flow rate measuring part after outputting the close signal.

Processing apparatus, abnormality detection method, and storage medium

A substrate processing system includes multiple assemblies framed and including such that each of the assemblies includes a substrate processing apparatus which supplies a processing fluid to a substrate and processes the substrate, a fluid supply control apparatus including a fluid control device which controls flow of the processing fluid supplied to the substrate processing apparatus, and a drive equipment apparatus including a drive device which drives movement of the fluid control device in the fluid supply control apparatus.

Substrate processing apparatus and substrate processing apparatus assembling method

A substrate solution-treatment apparatus includes: a substrate holding part for holding a substrate; a nozzle for supplying a treatment solution onto the substrate; a supply line; a flow rate control mechanism including a flow rate meter and a flow rate control valve installed in the supply line; an opening/closing valve installed in the supply line; and a control part for controlling operations of the flow rate control mechanism and the opening/closing valve. The flow rate control mechanism controls the flow rate control valve such that a detection value of the flow rate meter coincides with a flow rate target value provided from the control part. The control part controls the nozzle to supply the treatment solution onto the substrate with the opening/closing valve opened, and provides a first flow rate as the flow rate target value to the flow rate control mechanism.

Substrate solution-treatment apparatus, treatment solution supplying method and storage medium

Provided is a processing apparatus for performing a processing of a substrate to be processed using a high-pressure fluid to prevent the generation of particles and ensure airtightness in the processing container. A sealing member is installed to surround a carrying port of the processing chamber, the carrying port is closed by the cover, and the cover is restricted from retreating by the pressure in the processing chamber by a lock plate, thereby processing the wafer in the processing chamber using the high-pressure fluid. Since the sealing member is pressurized by the internal atmosphere of the processing chamber to be pressed toward the cover during the drying process, a gap between the cover and the processing chamber may be airtightly closed. Since the sealing member does not slide with respect to the processing chamber or the cover, the generation of particles is suppressed.

Processing apparatus

A liquid processing apparatus includes a first line to which a processing liquid pressurized by a pump is sent from a processing liquid supply source; a plurality of second lines into which the pressurized processing liquid flowing through the first line flows; a branch line connected to a branch point on each of the second lines; a liquid processing unit configured to process a substrate with the processing liquid; an orifice provided at an upstream side of the branch point; and a first control valve provided at a downstream side of the branch point. The first control valve changes an amount of the processing liquid flowing to a downstream side of the first control valve to control a pressure of the processing liquid in a section between the orifice of the second line and the first control valve, and to control a flow rate of the processing liquid.

Liquid processing apparatus

Disclosed is a substrate processing apparatus including a processing vessel in which a target substrate W is processed by using a high-pressure fluid in a supercritical state or a subcritical state, and pipes that are divided into a first pipe member and a second pipe member in a flowing direction of the fluid and circulate the fluid are connected to processing vessel. A connecting/disconnecting mechanism moves at least one of first and second pipe members between a connection position and a separation position of first pipe member and the second pipe member, and opening/closing valves are installed in each of first and second pipe members and are closed at the time of separating pipe members.

Substrate processing apparatus, substrate processing method, and storage medium

Disclosed are an evaporator, an evaporation method, and a substrate processing apparatus, which can increase the concentration of generated vapor of an organic solvent and efficiently heat the organic solvent. The evaporator includes a fluid tube, a liquid organic solvent supply device for supplying the organic solvent liquid to one end of the fluid tube, and heating units for heating the fluid tube. The fluid tube has a cross section that increases from the one end to the other end. When the organic solvent liquid supplied to one end of the fluid tube is heated, the organic solvent vapor is discharged from the other end of the fluid tube. The substrate processing apparatus includes the above-described evaporator.

Evaporator, evaporation method and substrate processing apparatus

Provided is substrate processing apparatus including processing chamber that dries substrate W using high temperature and high pressure fluid, raw material accommodating unit that accommodates raw material in liquid state, and supplying unit that supplies the high temperature and high pressure fluid to the processing chamber. The supplying unit includes sealable outer vessel connected to the processing chamber and the raw material accommodating unit, and inner vessel provided within the outer vessel and configured to receive the raw material. The inner vessel is provided with opened holes portions configured to drop down the raw material toward a portion of the outer vessel to be heated. After the raw material is accommodated in the inner vessel, the raw material is contacted with the portion to be heated and then heated. A high temperature and high pressure fluid is then obtained and supplied to the processing chamber.

Substrate processing apparatus

Disclosed is a substrate processing apparatus which can inhibit the occurrence of spots, such as watermarks, by reducing the remaining of the liquid that has been used for liquid treatment, inhibit the turn-over of the wafer, and improve throughput. In the disclosed substrate processing apparatus including a carrying means for carrying a semiconductor wafer W while vertically holding the wafer, a wafer boat (a carrying means) includes lower holders holding the bottom portion of the wafer, and a couple of left/right upper holders for holding the bottom outer edges of the wafer when the wafer is turned over. The lower holder includes a holding groove part and a turn-over prevention groove part, which are integrally formed with each other. The holding groove part includes holding grooves directly holding the bottom portion of the wafer, and the turn-over prevention groove part is disposed adjacent to the holding groove part and includes turn-over prevention grooves for holding the wafer when the holding of the wafer by the holding grooves has been released.

A substrate processing method which can reduce the number of particles to be left on each substrate is provided. In the substrate processing method, substrates W to be processed are dried, by using a fluid heated by a heating apparatus having one or more heating mechanisms. The substrate processing method comprises a first step of supplying a mixed fluid containing a gas and a processing liquid and heated by the heating apparatus, into a processing chamber in which the substrates to be processed are placed, and a second step of supplying the heated gas into the processing chamber. The output of at least one of the heating mechanisms is kept at a preset constant value for a period of time during which a predetermined time passes after the start of the first step. In the second step, the output of the heating mechanism is determined under a feed back control.

Substrate processing method, and program storage medium therefor

Substrate processing method, substrate processing apparatus, and program storage medium

Growing community of inventors

Tosu, Japan

Mikio Nakashima