Oki Electric Industry Co., Ltd.

Mikio Mohri

Hiroaki Kakinuma

A photodiode () and resistors () are formed on a semi-insulating InP substrate (). The photodiode () is formed by subjecting a layered structure formed by successively depositing an n-type InP cladding layer (), an n-type InGaAsP core layer (), a nondoped InGaAs active layer (), a p-type InGaAsP core layer (), and a p-type InP cladding layeron the InP substrate () to a selective etching process. The resistors () have the same layered structure as the photodiode (). Photodiode () is connected to n-type wiring lines () and a p-type wiring line (). Resistors () are connected to the n-type wiring lines () and the p-type wiring line () in parallel to the photodiode (). A side surface on the side of the photodiode () of the InP substrate () is a cleavage plane, and the cleavage plane is coated with an antireflection film (). Since the resistors () have a p-type semiconductor layer having a high resistivity, the resistors () can be formed in a big width. Consequently, change of resistance corresponding to change of the width of the resistor is small and hence matching can be easily achieved.

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Tokyo, Japan

Mikio Mohri