Nippon Shokubai Co., Ltd.

Kelk Ltd.

Japan Advanced Institute of Science and Technology

Ishikawa Prefecture

Hakusan Corporation

Mikio Koyano

Tatsuya Shimoda

Hironobu Ono

Takeo Akatsuka

Toshiharu Minamikawa

Akinari Matoba

Shigeyuki Tsurumi

Shinya Maenosono

Kazumasa Yasuda

Katsushi Fukuda

Tetsushi Tanaka

Takeshi Sotome

Takeshi Toyoda

A method for manufacturing a thermoelectric conversion element includes forming a thermoelectric film containing a thermoelectric material on a surface of a substrate, pressing the thermoelectric film with a mold to form a pattern of the thermoelectric film on the surface of the substrate, and heating the pattern of the thermoelectric film formed on the surface of the substrate to generate the thermoelectric conversion element.

Method for manufacturing thermoelectric conversion element and thermoelectric conversion element

A thermoelectric material of the present invention includes copper, tin, and sulfur, wherein a ratio A/B of the number A of copper atoms to the number B of tin atoms is 0.5 to 2.5 and a content of a metal element other than copper and tin is 5 mol % or less with respect to total metal elements. Additionally, the thermoelectric material of the present invention has a thermal conductivity less than 1.0 W/(m&#xb7;K) at 200 to 400&#xb0; C.

Thermoelectric material, thermoelectric device, powder for thermoelectric material, and method for producing thermoelectric material

A thermoelectric material includes a parent phase in which an MgSiSn alloy is a main component, a void formed in the parent phase, and a silicon layer that is formed on at least a wall surface of the void and that includes silicon as a main component. The thermoelectric material further includes MgO in an amount of 1.0 wt. % or more and 20.0 wt. % or less. The silicon layer includes amorphous Si, or amorphous Si and nanosized Si crystals, and the parent phase includes a region in which the composition ratio of the Si of the chemical composition of the MgSiSn alloy is higher than in the other regions and a region in which the composition ratio of the Sn of the chemical composition of the MgSiSn alloy is higher than in the other regions. With these configurations, the thermoelectric material realizes both lower thermal conductivity and lower electrical resistivity.

Thermoelectric material and thermoelectric module

Growing community of inventors

Ishikawa, Japan

Mikio Koyano