Mitsubishi Electric Corporation

The Furukawa Electric Co., Ltd.

Nippon Telegraph and Telephone Corporation

Mitsubishi Electric Cooperation

Mikio Ishihara

Tatsuya Kawase

Yuji Imoto

Junji Fujino

Noboru Miyamoto

Kazuaki Hiyama

Taishi Sasaki

Shohei Ogawa

Kenji Suzuki

Keisuke Tanaka

Koji Saito

Hiroyuki Yamada

Hajime Kato

Takashi Shigematsu

Naoki Yoshimatsu

Yosuke Nakata

Daisuke Oya

Tsuyoshi Osaga

Tatsuya Iwasa

Masayoshi Shinkai

Koichi Takagi

Yuki Wakabayashi

Tsuyoshi Takayama

Hiroyuki Harada

Yukio Yasuda

Shinji Nagasawa

Taketoshi Shikano

Yutaka Yoneda

Daisuke Murata

Shinsuke Asada

Nobuyoshi Kimoto

Jun Yamakawa

Yusuke Ishiyama

Soichi Sakamoto

Miho Nagai

In a semiconductor-mounting heat dissipation base plate including: an insulating substrate to which a metal circuit layer for mounting a semiconductor chip thereon is fixed; a heat dissipation base formed from the same metal material as the metal circuit layer at a side opposite to the metal circuit layer across the insulating substrate and fixed to the insulating substrate similar to the metal circuit layer; and a strengthening member provided in the heat dissipation base so as to be separated from the insulating substrate, the sizes of crystal grains of a metal structure at a part of the heat dissipation base or the metal circuit layer are reduced by a crystal size reducing material adhered to a mold, thereby preventing an adverse effect of a columnar crystal structure.

Semiconductor-mounting heat dissipation base plate and production method therefor

A base plate () includes a fixed surface and a radiating surface which is a surface opposite to the fixed surface. An insulating substrate () is bonded to the fixed surface of the base plate (). Conductive patterns () are provided on the insulating substrate (). Semiconductor chips () are bonded to the conductive pattern (). An Al wire () connects top surfaces of the semiconductor chip () to the conductive pattern (). The insulating substrate (), the conductive patterns (), the semiconductor chips (to) and the Al wires (to) are sealed with resin (). The base plate () includes a metal part () and a reinforcing member () provided in the metal part (). A Young's modulus of the reinforcing member () is higher than a Youngs modulus of the metal part ().

Semiconductor module, semiconductor device, and vehicle

An object is to provide a power module in which adhesion of a sealing resin is sufficient and which is highly reliable. The power module includes: an insulative board in which a pattern of a conductor layer is formed on a ceramic plate; power semiconductor elements placed on the insulative board; lead frames each in a plate shape connecting from electrodes of the power semiconductor elements to screw-fastening terminal portions; and a sealing resin portion that seals connection portions between the power semiconductor elements and the lead frames, and regions around the connection portions; wherein, in the lead frames, opening portions are formed at positions where each of the lead frames at least partly overlaps, in planar view, with a portion of the insulative board on which the conductor layer is not formed.

Power module having a hole in a lead frame for improved adhesion with a sealing resin, electric power conversion device, and method for producing power module

In semiconductor device, a substrate unit includes an insulating substrate, a first conductor substrate and a second conductor substrate which are disposed on one main surface of the insulating substrate and spaced apart from each other, and a third conductor substrate which is disposed on the other main surface opposite to the one main surface of the insulating substrate. A terminal is connected to a surface of a semiconductor element opposite to the first conductor substrate. The terminal extends from a region above the semiconductor element to a region above the second conductor substrate while being connected to the second conductor substrate. At least a part of the terminal, the substrate unit and the semiconductor element is sealed by a resin. The third conductor substrate is exposed from the resin.

Semiconductor device

A semiconductor device includes a semiconductor element having a front electrode, an electrode plate having an area larger than the front electrode of the semiconductor element in a two-dimensional view and made of aluminum or aluminum alloy, and a metal member having a joint surface joined to the front electrode of the semiconductor element with solder, having an area smaller than the front electrode of the semiconductor element in a two-dimensional view, made of a metal different from the electrode plate, and fastened to the electrode plate to electrically connect the front electrode of the semiconductor element to the electrode plate.

Herein provided are: a ceramic board; a semiconductor element for electric power, on one surface of which an electrode is formed, and the other surface of which is bonded to the ceramic board; a lead terminal, one end side of which is bonded to the electrode, and the other end side of which is to be electrically connected to an outside thereof; and a sealing member by which the semiconductor element for electric power is sealed together with a part, in the lead terminal, bonded to the electrode; wherein, near an end in said one end side of the lead terminal, an inclined surface is formed which becomes farther from the circuit board as it becomes closer to the end.

Shaped lead terminals for packaging a semiconductor device for electric power

The object is to provide a technology capable of enhancing a cooling performance of a semiconductor device. The semiconductor device includes a fin portion including a plurality of projecting portions that are connected to a lower surface of a heat-transfer base plate, a cooling member covering the fin portion and being connected to an inlet through which coolant to flow toward the fin portion flows in and an outlet through which coolant flowing from the fin portion flows out, and a header being a water storage chamber that is provided between the inlet and the fin portion and is partitioned from the fin portion so as to be capable of allowing coolant to flow through from the inlet to the fin portion.

Semiconductor device, inverter device, and vehicle

An object of the present invention is to provide a semiconductor module with high heat dissipation at a low cost. A semiconductor module according to the present invention includes: a case having a hollow portion; a base board made of an aluminum alloy having a first portion corresponding to the hollow portion of the case, and a second portion corresponding to a main body portion of the case, the base board being attached to a bottom face of the case via the second portion; a ceramic insulating substrate disposed on the first portion of the base board; a wiring pattern disposed on the ceramic insulating substrate; semiconductor elements disposed on the wiring pattern; metal wiring boards connected to the semiconductor elements; and a sealing resin that seals the hollow portion of the case.

Semiconductor module including a case and base board

A semiconductor device according to the present invention includes a ceramic substrate, a plurality of circuit patterns arranged on a surface of the ceramic substrate, a semiconductor element arranged on an upper surface of at least one circuit pattern, and a sealing resin for sealing the ceramic substrate, the plurality of circuit patterns, and the semiconductor element, in which an undercut part is formed in opposed side surfaces of the circuit patterns adjacent to one another, the undercut part is configured such that an end of an upper surface of the circuit pattern protrudes outside the circuit pattern more than an end of a lower surface of the circuit pattern on the ceramic substrate, and the undercut part is also filled with the sealing resin.

Semiconductor device and method for manufacturing the same

A semiconductor device includes a semiconductor element having a lower surface bonded to an insulating substrate side, and a plate-shaped lead terminal bonded to an upper surface of the semiconductor element, and having a horizontally extending portion. The horizontally extending portion in the lead terminal is bonded to the semiconductor element and includes a linearly extending portion in a planar view. The semiconductor device further includes a sealing resin that seals the semiconductor element together with the linearly extending portion in the lead terminal. A linear expansion coefficient of the sealing resin shows a value intermediate between a linear expansion coefficient of the lead terminal and a linear expansion coefficient of the semiconductor element, and the lead terminal includes a recess or a projection to horizontally and partially separate the linearly extending portion into parts.

Semiconductor device with a plate-shaped lead terminal

An electrode terminal includes: a first drawn-out part to be bonded to a main electrode; and a second drawn-out part that is formed of a plate member in a continuous fashion from one end portion to be positioned opposite to the main electrode with a gap therebetween until another end portion to be connected to an external circuit, so that a portion in the first drawn-out part that is adjacent to a portion therein to be bonded to the main electrode, is bonded to an opposing surface to the main electrode in said one end portion; wherein the first drawn-out part is formed so that the portion to be bonded to the main electrode is away from the opposing surface; and wherein an opening portion corresponding to the main electrode is formed in the second drawn-out part.

Electrode terminal, semiconductor device for electrical power, and method for manufacturing semiconductor device for electrical power

A ground working tool comprising a tubular base body with an inner receiving space for receiving a cylindrical core of solid ground material, connector mechanism for connecting the tubular base body with a rotary drive and locking mechanism for locking the core in the receiving space of the tubular base body. The locking mechanism involves at least one locking unit having a guide rail being disposed at an inner side of the tubular base body and arranged with a deviation angle relative to a tangential direction of the tubular base body and the locking unit further comprises at least one locking element, which is moveably mounted on the guide rail between a radially outer releasing position and a radially inner locking position, in which the core is clamped within the receiving space by means of the at least one locking element.

Semiconductor device comprising a conductive film joining a diode and switching element

A transistor () is provided on a semiconductor substrate (). A temperature detection diode () for monitoring temperature of an upper surface of the semiconductor substrate () is provided on the semiconductor substrate (). An external electrode () is connected in common to an emitter (E) of the transistor () and a cathode (K) of the temperature detection diode (). Therefore, an external electrode for the cathode (K) of the temperature detection diode () can be removed, and thus the device can be reduced in size and improved in terms of ease of assembly.

Growing community of inventors

Tokyo, Japan

Mikio Ishihara