Kyocera Corporation

Mikio Fujii

Kenji Kitazawa

Shinichi Koriyama

Takeshi Takenoshita

A beam scanning antenna has the following structure: A primary radiator and a flat wave collector are disposed between metal plates, and input and output portions are provided on one of the metal plates. In the wave collector, a plurality of strip-shaped electrodes substantially parallel to one another in the direction of travel of electromagnetic waves is disposed on one principal surface of a substrate made of a material whose dielectric constant can be changed by an electrostatic field, and on the other principal surface, an counter electrode being strip-shaped or formed on a substantially entire area of the surface is disposed so as to be opposed to the strip-shaped electrodes.

Beam scanning antenna

A high-frequency package comprising a dielectric substrate, a high-frequency element that operates in a high-frequency region and is mounted in a cavity formed on said dielectric substrate, and a microstrip line formed on the surface or in an inner portion of said dielectric substrate and electrically connected to said high-frequency element, wherein a signal transmission passage of a waveguide is connected to a linear conducting passage or to a ground layer constituting the microstrip line. In the junction portion of the waveguide, for example, an end of the linear conducting passage is electromagnetically opened, so that the end portion works as a monopole antenna inside the waveguide that is connected. The high-frequency package makes it possible to connect the waveguide without adversely affecting the sealing of the high-frequency element and to transmit high-frequency signals with a low loss.

High frequency package

A high-frequency semiconductor device contains a semiconductor element in a cavity formed by a dielectric board and a cap. A first high-frequency transmission line connected to the semiconductor element is formed on the surface of said dielectric board in said cavity and a second high-frequency transmission line is formed on the bottom surface of said dielectric board, so that said first high-frequency transmission line and said second high-frequency transmission line are electromagnetically coupled together. In this semiconductor devise in which the first transmission line and the second transmission line are electromagnetically coupled together, the transmission lines need not be passed over the side wall of the cap, and neigther reflection loss or radiation loss takes place on the side wall. Besides, transmission loss of high-frequency signals is caused by neigther through-holes or via-holes, and is effectively suppressed.

Growing community of inventors

Kyoto, Japan

Mikio Fujii