Mitsubishi Denki Kabushiki Kaisha

Nissan Motor Company Limited

Mitsubishi Denki K.k.

Mikio Bessho

Tateki Mitani

Masahiro Tsugai

Yuji Hase

Kohji Tanimoto

Toshio Iwata

Masahiko Akamatsu

Koichi Murakami

Katsumi Satoh

Atsushi Ueda

Yasuyoshi Hatazawa

Yasuo Tada

Koji Tanimoto

Yukitsugu Hirota

Seiki Kodama

Motomi Ichihashi

Fumio Mizohata

Takashi Sesekura

Toshinobu Kawamura

In a GCT device which controls large current at the operating frequency of 1 kHz or more, a ring-shaped gate terminal (,) is made of a magnetic material with the maximum permeability of 15,000 or less in the CGS Gaussian system of units. Further, in the outer end portion of an outer plane portion (,O) of the ring-shaped gate terminal (,), a plurality of slits extending diametrically are provided along the circumference to be coupled to mounting holes (,).

Pressure contact type semiconductor device with ringshaped gate terminal

A power semiconductor switching device comprises a mounting board (110) on which a reverse bias driving circuit (20) for applying a reverse bias between the control electrode and one of two main electrodes of a GTO element (11) housed in a flat package is contained. The mounting board (110) has a through hole through which the main electrode of the GTO element (11) penetrates so that the flat package is located in the proximity of the through hole and the perimeter of the through hole partially surrounds the flat package, and a conducting member formed on one surface of the mounting board (110) and electrically connected to the control electrode of the GTO element (11).

Power semiconductor switching device

A pressure sensor is capable of detecting a certain pressure and an atmospheric pressure individually and independently in real time, with miniaturization and light weight. This is attained by providing a pressure sensor comprising a first pressure sensor; and an atmospheric pressure sensor. Each sensor includes a pressure-sensitive element and a circuit for amplifying an output signal from the pressure-sensitive element. The amplifying circuit for the first pressure sensor, and the pressure-sensitive element and the amplifying circuit for the atmospheric pressure sensor are provided on the same chip. The amplifying circuit compensates for nonuniformity in characteristics of the pressure-sensitive element due to temperatures.

Pressure sensor and chip therefor

A method for compensating an offset voltage temperature drift in a semiconductor strain gage sensor in which a temperature-sensitive power supply is modeled as the one for providing the output voltage V.sub.0 =KV.sub.S (1+.alpha.T), and, under the condition that the resistance of the compensating resistor and the coefficient .alpha. are within practical ranges, respectively, the parameter K is determined so as to minimize the compensating error, thereby both of the primary order term and the secondary order term with respect to the temperature in the offset voltage of the strain gage can be compensated so that the offset temperature drift can be reduced.

Method for compensating an offset voltage temperature drift in a

A pressure sensor includes an electrically insulating material covering wires for transmitting an electrical signal generated by a semiconductor pressure-sensing unit, the joints between the wires and the pressure-sensing unit, and the joints between the wires and leads connected to the wires for leading the electrical signal to the outside of the body casing of the sensor. Thus, detection of pressure is possible even in an intense-vibration environment, and it is also possible to reduce influences by changes in temperature.

Pressure sensor for high temperature vibration intense environment

A pressure sensor comprising a hollow main body (11) defining a bore (14) extending therethrough and having a detection end and an output end. A pressure sensing assembly is disposed within said bore (14) to divide it into a detection cavity (17) and an output cavity (18) through which output signal lines from said pressure sensing assembly extend. A flexible diaphragm (19) is attached to the detection end of the bore to define a sealed detection cavity (17) in which a pressure transmitting liquid is filled. The pressure sensing assembly comprises support plate (24) welded to said main body (11) and supporting a pressure sensing element (26) within said detection cavity (17) through a mounting bed (4). The signal lines sealingly extend through said support plate (24) from said detection cavity (17) to said output cavity (18).

Pressure sensor

A thermal flow sensor of a switching control type for measuring the flow rate of intake air of an internal combustion engine comprises a bridge circuit including temperature sensing resistors, a differential amplification circuit, a pulse generating circuit, a power supply control circuit and a resonance preventing circuit. The amplification circuit amplifying the output from the bridge circuit. The pulse generating circuit receives the output from the amplification circuit and generates a pulse train which has a time ratio corresponding to the output level of the amplification circuit. The power supply control means comprises a switching transistor which is turned on and off by the pulse train from the pulse generating circuit and a smoothing circuit which makes the output from the transistor continuous and supplies the continuous voltage to the bridge circuit. The resonance preventing circuit comprises a phase lag compensation circuit including a resistor and a capacitor connected in series between a differential amplifier of the amplification circuit, or a variable DC unbalanced voltage generator including a V/I converter which converts the voltage received from the bridge circuit to a current corresponding to the level of the received voltage and a resistor which converts the current output from the V/I converter to a voltage and outputs a variable DC unbalanced voltage thereacross, whereby the resonance phenomenon in the full range of the flow rate is prevented.

Switching control type thermal flow sensor

A semiconductor acceleration sensor, including a semiconductor substrate, in which a mounting portion is formed in the substrate, and first and second cantilevered beams are formed in the substrate in opposite sides of the mounting portion so that these three members are aligned along a straight line, and in which a weight is formed at an end of the first cantilevered beam, and first and second strain sensing devices are formed in approximately the same layout in surface portions of the first and second cantilevered beams, respectively.

Semiconductor acceleration sensor

A temperature sensing type flow sensor including a control pulse generating circuit for generating a pulse signal having a time ratio which corresponds to the output from a bridge circuit which contains temperature sensing elements, an intermittent control circuit for controlling a time in which an current is conducted in accordance with the time ratio, and a smoothing circuit for making an noncontinuous output from the intermittent control circuit continuous as supplied to the bridge circuit. The responsiveness of this temperature sensing type flow sensor is improved, and the change of the temperature sensing type elements due to time elapse and power source loss can be reduced. Furthermore, a switching control type temperature sensing flow sensor exhibits the most suitable frequency response throughout a significantly wide frequency region.

Temperature sensing flow sensor

A temperature sensing type flow sensor including a control pulse generating circuit for generating a pulse signal having a time ratio which corresponds to the output from a bridge circuit which contains temperature sensing elements, an intermittent control circuit for controlling a time in which a current is conducted in accordance with the time ratio, and a smoothing circuit for making an noncontinuous output from the intermittent control circuit continuous as supplied to the bridge circuit. The responsiveness of this temperature sensing type flow sensor is improved, and the change of the temperature sensing type elements due to time elapse and power source loss can be reduced. Furthermore, a switching control type temperature sensing flow sensor exhibits the most suitable frequency response throughout a significantly wide frequency region.

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Amagasaki, Japan

Mikio Bessho