Hitachi, Ltd.

Mikio Ashikawa

Kikuo Douta

Takamitsu Kamiyama

Iwao Takemoto

Akira Sasano

Yasuo Wada

Norio Koike

Norikazu Hashimoto

Mitsumasa Koyanagi

Hiroshi Yanazawa

Hiroo Usui

A face-plate of an image pick-up tube having a plurality of electrodes formed thereon and a plurality of conductors provided for external connection extending from said plurality of electrodes across the outer periphery of the face plate to the outer surface thereof. At least one of the plurality of conductors for said external connection comprises a thin film which is electrically insolated from the other conductors by a thin insulating film formed thereon. This thin insulating film also serves to seal, in an air tight manner, a vacuum envelope together with the conductor or conductors for external connection extending to the outer surface of the face-plate.

Image pick-up tube having a plurality of electrodes on the face-plate

A polycrystalline silicon layer is deposited by chemical vapor deposition method at a predetermined location on an oxide film grown by thermal oxidation on a surface of a monocrystal silicon substrate. Nitrogen ions are implanted in the outer surface of the polycrystalline silicon layer and the exposed surface of the oxide film. The whole surfaces are oxidized by wet oxidation so as to form a thick oxide layer at the surface of the oxide film which is not covered by the polycrystalline silicon layer.

Method for fabricating a silicon device utilizing ion-implantation and

In a scanning circuit having a plurality of cascade-connected unit circuits driven only by direct current, each unit circuit consisting of at least a pair of polarity inverting circuits, a train of output pulses shifted by a constant delay one after another depending upon the delay time proper to the unit circuits, are derived from the unit circuits by applying an input pulse to the first stage of the scanning circuit.

Scanning circuit to deliver train of pulses shifted by a constant delay

A thin film mask having a predetermined pattern is formed directly on a thin, transparent, conductive SnO.sub.2 film formed on a dielectric substrate in order to form a fine pattern of the transparent, conductive film and that part of the transparent conductive film which is not covered by the mask is etched away through the bombardment with ions of gas accelerated under the influence of an RF electric field. Suitable masks include photoresists, aluminum, chromium, and manganese.

Method of forming fine pattern of thin, transparent, conductive film

In an image sensor having a large scale array of semiconductor photodetectors, only the noise component is delivered from a first photodetector subsequent to the readout of a stored signal, in synchronism with the readout of a signal of a second photodetector, so that the noise component may be utilized for the cancellation of the noise component in the output from the second photodetector.

Semiconductor image sensor

In selectively etching a solid oxide thin film which has chemisorbed water (surface hydroxyl groups) in its surface, the thin film is surface-treated with an organic compound which has within its molecule a functional group to react with the surface hydroxyl groups. Thereafter, photo-etching is performed by the conventional method by applying a thin film of a photosensitive organic polymer onto the treated thin film. Through selection of the sort of the organic compound, the degree of side-etch arising in the process of the selective etch can be controlled.

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Koganei, Japan

Mikio Ashikawa