Ricoh Company, Ltd.

Mikiko Takada

Yuki Nakamura

Shinji Matsumoto

Naoyuki Ueda

Yuji Sone

Yukiko Abe

Ryoichi Saotome

Sadanori Arae

Masaki Kato

Hiroshi Deguchi

Hiroyoshi Sekiguchi

Kazunori Ito

Tsutomu Sato

Masaomi Sasaki

Hiroshi Miura

Tatsuya Tomura

Hajime Yuzurihara

Hiroko Ohkura

Takeshi Miki

Yukio Fujiwara

Eiko Hibino

Yuuma Usui

Hisamitsu Kamezaki

Katsuyuki; Yamada

Hiroshi; Deguchi

Shinya; Narumi

A printed matter producing method includes forming an intermediate layer over a base material; applying an ink receiving layer forming liquid to the intermediate layer to form an ink receiving layer; and applying an ink to the ink receiving layer by an inkjet method to form an image. The viscosity of the ink receiving layer forming liquid at 25 degrees C. is 40 mPa·s or higher.

Printed matter producing method and printed matter producing apparatus, and printed matter

To provide a field-effect transistor, containing: a substrate; a protective layer; a gate insulating layer formed between the substrate and the protective layer; a source electrode and a drain electrode, which are formed to be in contact with the gate insulating layer; a semiconductor layer, which is formed at least between the source electrode and the drain electrode, and is in contact with the gate insulating layer, the source electrode, and the drain electrode; and a gate electrode, which is formed at an opposite side to the side where the semiconductor layer is provided, with the gate insulating layer being between the gate electrode and the semiconductor layer, and is in contact with the gate insulating layer, wherein the protective layer contains a metal oxide composite, which contains at least Si and alkaline earth metal.

Field-effect transistor including a metal oxide composite protective layer, and display element, image display device, and system including the field-effect transistor

A p-type oxide which is amorphous and is represented by the following compositional formula: xAO.yCuO where x denotes a proportion by mole of AO and y denotes a proportion by mole of CuO and x and y satisfy the following expressions: 0&#x2264;x&#x3c;100 and x+y=100, and A is any one of Mg, Ca, Sr and Ba, or a mixture containing at least one selected from the group consisting of Mg, Ca, Sr and Ba.

P-type oxide, p-type oxide-producing composition, method for producing p-type oxide, semiconductor device, display device, image display apparatus, and system

To provide a field-effect transistor, containing: a gate electrode configured to apply gate voltage; a source electrode and a drain electrode, both of which are configured to take out electric current; an active layer formed of a n-type oxide semiconductor, provided in contact with the source electrode and the drain electrode; and a gate insulating layer provided between the gate electrode and the active layer, wherein work function of the source electrode and drain electrode is 4.90 eV or greater, and wherein an electron carrier density of the n-type oxide semiconductor is 4.0&#xd7;10cmor greater.

Field-effect transistor and method for producing field-effect transistor

To provide an electroconductive thin film, containing: a metal oxide containing indium and tin; and gold.

Electroconductive thin film, coating liquid for forming electroconductive thin film, field-effect transistor, and method for producing field-effect transistor

A p-type oxide which is amorphous and is represented by the following compositional formula: xAO.yCuO where x denotes a proportion by mole of AO and y denotes a proportion by mole of CuO and x and y satisfy the following expressions: 0&#x2266;x&#x3c;100 and x+y=100, and A is any one of Mg, Ca, Sr and Ba, or a mixture containing at least one selected from the group consisting of Mg, Ca, Sr and Ba.

Amorphous p-type oxide for a semiconductor device

To provide a coating liquid for forming a metal oxide film, containing: an indium compound; at least one selected from the group consisting of a magnesium compound, a calcium compound, a strontium compound, and a barium compound; at least one selected from the group consisting of a compound containing a metal a maximum positive value of an oxidation number of which is IV, a compound containing a metal a maximum positive value of an oxidation number of which is V, and a compound containing a metal a maximum positive value of an oxidation number of which is VI; and an organic solvent.

Coating liquid for forming metal oxide film, metal oxide film, field-effect transistor, and method for producing field-effect transistor

To provide is a p-type oxide, including an oxide, wherein the oxide includes: Cu; and an element M, which is selected from p-block elements, and which can be in an equilibrium state, as being present as an ion, wherein the equilibrium state is a state in which there are both a state where all of electrons of p-orbital of an outermost shell are lost, and a state where all of electrons of an outermost shell are lost, and wherein the p-type oxide is amorphous.

P-type oxide, composition for producing p-type oxide, method for producing p-type oxide, semiconductor element, display element, image display device, and system

A nozzle plate having a nozzle hole that penetrates through the nozzle plate in a thickness direction is disclosed. The nozzle plate includes a discharge outlet that is formed at the nozzle hole, and provided curvatures of four corner portions of an opening shape of the discharge outlet are denoted as R1, R2, R3, and R4, the opening shape of the discharge outlet is configured to approximate the equation R1=R2&#x2267;R3=R4&#x2248;0.

Nozzle plate, method of manufacturing nozzle plate, inkjet head, and inkjet printing apparatus

A coating liquid for forming a metal oxide thin film includes: an inorganic indium compound; an inorganic calcium compound or an inorganic strontium compound, or both thereof; and an organic solvent.

Coating liquid for forming metal oxide thin film, metal oxide thin film, field-effect transistor, and method for manufacturing field-effect transistor

A field-effect transistor, which contains: a gate electrode configured to apply gate voltage; a source electrode and a drain electrode, which are configured to extract electric current; an active layer formed of a n-type oxide semiconductor, provided in contact with the source electrode and the drain electrode; and a gate insulating layer provided between the gate electrode and the active layer, wherein the n-type oxide semiconductor is a triclinic crystal compound, a monoclinic crystal compound, or a trigonal crystal compound, each of which is substitutionally doped with at least one dopant selected from the group consisting of a divalent cation, a trivalent cation, a tetravalent cation, a pentavalent cation, and a hexavalent cation, and wherein a valence of the dopant is greater than a valence of a metal ion constituting the n-type oxide semiconductor, excluding the dopant.

Field-effect transistor, display element, image display device, and system

A two-photon absorption material represented by the following General Formula (I): 

Two-photon absorption material and application thereof

A photosensitized composite material and a material, an element, a device, and the like, which employ the photosensitized composite material, are provided. In the photosensitized composite material, multiphoton absorption compounds are highly sensitized for practical use by utilizing an enhanced plasmon field. The photosensitized composite material has a structure where the multiphoton absorption compounds are linked to the surface of a fine metal particle through linking groups. The fine metal particle generates an enhanced surface plasmon field in resonance with a multiphoton excitation wavelength. The multiphoton absorption compounds have a molecular structure enabling multiphoton absorption. The photosensitized composite material is contained in or used for, for example, a three-dimensional memory material and a three-dimensional recording medium, an optical power limiting material and an optical power limiting element, a photocuring material and a stereolithography system, and a fluorescent material for a multiphoton fluorescence microscope and a multiphoton fluorescence microscope.

Growing community of inventors

Kanagawa, Japan

Mikiko Takada