Matsushita Electric Industrial Co., Ltd.

Advanced Lcd Technologies Development Center Co., Ltd.

Panasonic Corporation

Kabushiki Kaisha Ekisho Sentan Gijutsu Kaihatsu Center

Panasonic Holdings Corporation

Matsuhita Electric Co., Ltd.

Mikihiko Nishitani

Yoshinobu Kimura

Masakiyo Matsumura

Masayuki Jyumonji

Takahiro Wada

Yukio Taniguchi

Takayuki Negami

Masaharu Terauchi

Masato Hiramatsu

Hirotaka Yamaguchi

Susumu Tsujikawa

Masatoshi Kitagawa

Yoshitaka Yamamoto

Masashi Goto

Yukihiro Morita

Fumiki Nakano

Naoki Kohara

Yusuke Fukui

Shinichi Yamamoto

Michiko Okafuji

Shigemi Kohiki

Jun Hashimoto

Masahiro Sakai

Masumi Izuchi

Takuji Tsujita

Hikaru Nishitani

Hiroyuki Ogawa

Yasuhiro Yamauchi

Hiroshi Tsutsu

Keizaburo Kuramasu

Yoshinao Taketomi

Hiroshi Satani

Yosuke Honda

Kiichiro Oishi

Yoshiko Mino

Osamu Inoue

Hiroyuki Yamakita

Katsumi Adachi

Shinichiro Ishino

Kaname Mizokami

Yasuhiro Hashimoto

Hiroshi Asano

Satoshi Ikeda

Teppei Hosokawa

Hideo Koseki

Norimitsu Tohnai

Mitsusuke Ikeda

Yoshinori Yamada

The complex crystal of the present disclosure is a complex crystal having a structure in which supramolecular units each composed of two or more types of molecules are arrayed. Each of the supramolecular units contains a cyanoacrylic acid derivative and a trisubstituted methylamine as the molecules. The complex crystal has, between the supramolecular units, molecular cavities in each of which a guest molecule for which the supramolecular unit is a host is not disposed. The complex crystal of the present disclosure can have a property of incorporating a chemical substance therein and can exhibit a great change in a characteristic when incorporating the chemical substance therein.

Complex crystal and chemosensor provided with same

The present invention provides a zinc oxide-based ultraviolet light emitting material showing intense emission in the ultraviolet region. The present invention is an ultraviolet light emitting material containing: zinc and oxygen as main components; at least one element selected from the group consisting of aluminum, gallium, and indium, as a first sub-component; and phosphorus as a second sub-component. This material has n-type conductivity.

Ultraviolet light emitting material

The present invention improves discharge characteristics of a protective layer in order to provide a PDP that exhibits excellent display performance even if the PDP is of a fine-cell structure. The present invention also provides a manufacturing method for the PDP. In particular, a protective layeris composed of an MgO film layerand an MgO particle layerthat is made of MgO particles. The MgO particlesare formed by burning an MgO precursor and satisfy that a/b&#x2267;1.2, where a denotes a spectrum integral value in a wavelength region of a CL spectrum from 650 nm to 900 nm, exclusive of 900 nm, and b denotes a spectrum integral value in a wavelength region of the CL spectrum from 300 nm to 550 nm, exclusive of 550 nm.

Plasma display panel with exposed crystal particles and manufacturing method thereof

A first aim of the present invention is to provide a PDP capable of stably delivering favorable image display performance and being driven with low power, by improving the surface layer to improve secondary electron emission characteristics and charge retention characteristics. A second aim of the present invention is to provide a PDP, in addition to having the above-mentioned effects, capable of reducing an aging time. In order to achieve these aims, a crystalline film of a film thickness of approximately 1 &#x3bc;m is disposed as a surface layer (protective film)on a surface of the dielectric layerthat faces a discharge space. The surface layeris made by adding Sr to CeO, and a concentration of Sr in the surface layeris in a range of 11.8 mol % to 49.4 mol % inclusive. With this structure, an attempt is made to improve the secondary electron emission characteristics and aging characteristics in the surface layer

Plasma display panel

A PDP can be driven at low voltage while having a charge retention property in a protection layer, and has favorable image display properties. Additionally, the PDP prevents the occurrence of discharge delay and realizes high-quality image display by performing favorable high-speed driving in a high definition PDP. To achieve this, a surface layer () is formed to a film thickness of 1 &#x3bc;m in an oxygen atmosphere having an oxygen partial pressure of 0.025 Pa or more, the surface layer () is provided on a face of a dielectric layer () on a discharge space side. Furthermore, MgO particles () are dispersed on a surface of the surface layer (). The surface layer () has the effects of protecting the dielectric layer () from ion bombardment during discharge, reducing the firing voltage, and preventing excessive electron loss. Also, the MgO particles () have a high initial electron emission property.

Plasma display panel and its manufacturing method

The present invention improves discharge characteristics of a protective layer in order to provide a PDP that exhibits excellent display performance even if the PDP is of a fine-cell structure. The present invention also provides a manufacturing method for the PDP. In particular, a protective layeris composed of an MgO film layerand an MgO particle layerthat is made of MgO particles. The MgO particlesare formed by burning an MgO precursor and satisfy that a/b&#x2267;1, where a denotes a spectrum integral value in a wavelength region of a CL spectrum from 200 nm to 300 nm, exclusive of 300 nm, and b denotes a spectrum integral value in a wavelength region of the CL spectrum from 300 nm to 550 nm, exclusive of 550 nm.

Plasma display panel and method for manufacture of the same

A PDP () with a reduced discharge inception voltage and discharge sustaining voltage for improving luminous efficiency has at least a pair of substrates (and) that are disposed in opposition to sandwich a discharge space therebetween. At least a portion of at least one of the substrates has two or more display electrode pairs () that include narrow bus electrodes (and), a dielectric layer () formed so as to cover the display electrode pairs (), and a protective layer () formed so as to cover the dielectric layer (). The dielectric layer () has a dense film structure with a dielectric breakdown voltage of 1.0&#xd7;10[V/cm] to 1.0&#xd7;10[V/cm].

The present invention provides a plasma display panel (PDP) with a protective film improved so as to achieve a lower discharge starting voltage. A surface portion of the protective filmsubstantially is composed of magnesium (Mg), aluminum (Al), nitrogen (N), and oxygen (O). The protective filmis formed so that in the surface portion of the protective film, a ratio of the number of atoms of the aluminum to a total of the number of atoms of the magnesium and the number of atoms of the aluminum is at least 2.1% but not more than 66.5%, a ratio of the number of atoms of the nitrogen to a total of the number of atoms of the nitrogen and the number of atoms of the oxygen is at least 1.2% but not more than 17.2%, and a ratio of the total of the number of atoms of the nitrogen and the number of atoms of the oxygen to the total of the number of atoms of the magnesium and the number of atoms of the aluminum is at least 1.0 but not more than 1.35.

A plasma display panel in which a first substrate having a protective layer formed thereon opposes a second substrate across a discharge space, with the substrates being sealed around a perimeter thereof. At a surface of the protective layer, first and second materials of different electron emission properties are exposed to the discharge space, with at least one of the materials existing in a dispersed state. The first and second materials may be first and second crystals, and the second crystal may be dispersed throughout the first crystal.

Plasma display panel and manufacturing method for the same

A gas discharge display panel exhibits a favorable display performance by increasing a wall charge retaining property, controlling a discharge delay for optimal image display, and reducing the discharge starting voltage. A PDP can exhibit enhanced display quality by improving a secondary electron emission factor &#x3b3; compared to conventional cases and lowering the discharge starting voltage to widen the driving margin. A manufacturing method for a gas discharge display panel can reduce the exhaustion time in the sealing exhaustion process, and driving circuit component costs are reduced. In a gas discharge display panel, a protective layer includes a first and a second protective film, the second protective film is formed on at a least part of a surface of the first protective film. The first protective film has a larger impurity content than the second protective film.

Gas discharge display panel

A lighting rate is calculated from a video signal input in a plasma display device, and an output current of DC-DC converter, which is the same as a discharge current in a sustain period corresponding to the lighting rate, is synchronized with a generation timing of discharge current. With such a configuration, even if discharge current in the sustain period of each subfield is rapidly changed, a sustain pulse voltage can be kept constant.

Plasma display device

A crystallization method includes wavefront-dividing an incident light beam into a plurality of light beams, condensing the wavefront-divided light beams in a corresponding phase shift portion of a phase shift mask or in the vicinity of the phase shift portion to form a light beam having an light intensity distribution of an inverse peak pattern in which a light intensity is minimum in a point corresponding to the phase shift portion of the phase shift mask, and irradiating a polycrystalline semiconductor film or an amorphous semiconductor film with the light beam having the light intensity distribution to produce a crystallized semiconductor film.

Crystallization apparatus, optical member for use in crystallization apparatus, crystallization method, manufacturing method of thin film transistor, and manufacturing method of matrix circuit substrate of display

A thin film transistor includes a one conductive type semiconductor layer (); a source region () and a drain region () which are separately provided in the semiconductor layer; and a gate electrode () provided above or below the semiconductor layer with an insulating film interposed therebetween, wherein the width (W) of the junction face between the source region and the channel () which is provided between the source region and drain region, is different from the width (W) of the junction face between the above channel region and the drain region.

Thin film transistor, circuit apparatus and liquid crystal display

In the plasma display panel of the present invention, a protective layer covers a dielectric layer covering electrodes in discharge cells and faces a discharge space filled with a discharge gas. Here, the discharge gas includes at least one selected from the group consisting of Xe and Kr. In the protective layer, an electron band including at least electrons having energy level of 4 eV or less below a vacuum level is formed within a forbidden band in energy bands.

Plasma display panel having a protective layer preventing an increase in firing voltage

A crystallization apparatus includes an illumination system which illuminates a phase-shift mask and an image-forming optical system arranged in an optical path between the phase-shift mask and a semiconductor film. The semiconductor film is irradiated with a light beam having a light intensity distribution of inverted peak patterns whose light intensity is the lowest in portions corresponding to phase shift sections to form a crystallized semiconductor film. The image-forming optical system is located to optically conjugate the phase-shift mask and the semiconductor film and has an aberration corresponding to the given wavelength range to form a light intensity distribution of inverted peak patterns with no swell of intensity in the middle portion.

Crystallization apparatus and crystallization method

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Nara, Japan

Mikihiko Nishitani