Fujitsu Corporation

Fujitsu Semiconductor Limited

Fujitsu Microelectronics Limited

Miki T Suzuki

Shuzo Fujimura

Hideo Nunokawa

Hiroyuki Abe

Jun Kikuchi

Tatsuo Kato

Nobuhiko Akasaka

Haruhisa Mori

Tomonari Morishita

Yuka Hayami

Shunichi Ko

Mitsuaki Nagasaka

Hiroki Ogawa

Yoshiko Okui

Shinichi Okamoto

Hiroshi Haibara

A microcontroller is disposed on a receiving part of a wireless system in order to process a demodulation signal generated by a receiver circuit, and includes a memory and a CPU. The memory stores a control program of the microcontroller. The control program thereof includes a dual loop routine for an operation in reception standby mode. The dual loop routine has a first loop and a second loop included in the first loop. The CPU has an instruction set consisting of a plurality of instructions, and executes the instructions according to the program stored in the memory. The CPU executes an instruction irrelevant to an operation when the microcontroller is in reception mode during the second loop a number of times. The number of times is at least such that noise caused by the repetition of the second loop is lowered below a desired level.

Microcontroller

Even when, for example, electric charge is injected into the output transistor due to external factor such as a noise from the outside, to prevent the step-down voltage from rising, the step-down circuit is comprised of an N channel type output transistor which controls the voltage at the control end, a booster, which is connected to the control end of the output transistor and raises the voltage at the control end and a discharge circuit, which discharges the electric charge at the control end of the output transistor so that the power supply voltage inputted from the input end is stepped down to a desired step-down voltage and outputted from the output end.

Linear regulator with discharging gate driver

A method of manufacturing a semiconductor device, including the steps of: cooling a semiconductor wafer to a predetermined temperature, the semiconductor wafer being mounted on a stage provided with cooling means and having a thin oxide film on a surface thereof; supplying energy to gas containing hydrogen and water vapor to excite the gas into a plasma state; adding nitrogen fluoride downstream into a flow of the gas in the plasma state; and introducing a flow of the gas, including the nitrogen fluoride, to the semiconductor wafer to etch the thin oxide film while maintaining the semiconductor wafer at the predetermined temperature.

Method of manufacturing semiconductor device including light etching

Semiconductor substrates are immersed in pure water having a lowered dissolved-oxygen concentration and heated to a temperature above 60.degree. C., in an atmosphere which keeps the dissolved oxygen concentration in pure water, in order to etch oxide films on surfaces of the semiconductor substrates for cleaning the surfaces of the semiconductor substrates. According to the present invention, contaminants and residual chemicals can be effectively removed without adding any chemical treating step. The cleaning can be effective without increasing the number of chemicals, and improved throughputs of the cleaning step can be obtained.

Semiconductor substrate cleaning method and semiconductor device

Growing community of inventors

Kawasaki, Japan

Miki T Suzuki