Semiconductor Energy Laboratory Co., Ltd.

Miki Suzuki

Naoto Yamade

Junichi Koezuka

Shunpei Yamazaki

Hidekazu Miyairi

Kosei Nei

Yoshinori Ieda

Yoshinori Ando

Yasutaka Suzuki

Asako Higa

Hideto Ohnuma

Yuichi Sato

Kazuya Hanaoka

Satoshi Shinohara

Hajime Kimura

A semiconductor device capable of retaining data for a long time is provided. A leakage current path between adjacent memory cells in a memory cell array included in the semiconductor device is blocked without increasing the number of manufacturing steps, so that memory retention characteristics can be improved.

Semiconductor device

To improve the electrical characteristics of a semiconductor device including an oxide semiconductor, and to provide a highly reliable semiconductor device with a small variation in electrical characteristics. The semiconductor device includes a first insulating film, a first barrier film over the first insulating film, a second insulating film over the first barrier film, and a first transistor including a first oxide semiconductor film over the second insulating film. The amount of hydrogen molecules released from the first insulating film at a given temperature higher than or equal to 400&#xb0; C., which is measured by thermal desorption spectroscopy, is less than or equal to 130% of the amount of released hydrogen molecules at 300&#xb0; C. The second insulating film includes a region containing oxygen at a higher proportion than oxygen in the stoichiometric composition.

Semiconductor device and manufacturing method of the same

A semiconductor device is provided, which includes a single crystal semiconductor layer formed over an insulating surface and having a source region, a drain region, and a channel formation region, a gate insulating film covering the single crystal semiconductor layer and a gate electrode overlapping with the channel formation region with the gate insulating film interposed therebetween. In the semiconductor device, at least the drain region of the source and drain regions includes a first impurity region adjacent to the channel formation region and a second impurity region adjacent to the first impurity region. A maximum of an impurity concentration distribution in the first impurity region in a depth direction is closer to the insulating surface than a maximum of an impurity concentration distribution in the second impurity region in a depth direction.

Semiconductor device and method for manufacturing semiconductor device

To provide a semiconductor device including an oxide semiconductor which is capable of having stable electric characteristics and achieving high reliability, by a dehydration or dehydrogenation treatment performed on a base insulating layer provided in contact with an oxide semiconductor layer, the water and hydrogen contents of the base insulating layer can be decreased, and by an oxygen doping treatment subsequently performed, oxygen which can be eliminated together with the water and hydrogen is supplied to the base insulating layer. By formation of the oxide semiconductor layer in contact with the base insulating layer whose water and hydrogen contents are decreased and whose oxygen content is increased, oxygen can be supplied to the oxide semiconductor layer while entry of the water and hydrogen into the oxide semiconductor layer is suppressed.

Method for manufacturing semiconductor device

Semiconductor device and electronic device

It is an object to form a conductive region in an insulating film without forming contact holes in the insulating film. A method is provided, in which an insulating film is formed over a first electrode over a substrate, a first region having many defects is formed at a first depth in the insulating film by adding first ions into the insulating film at a first accelerating voltage; a second region having many defects is formed at a second depth which is different from the first depth in the insulating film by adding second ions into the insulating film at a second accelerating voltage, a conductive material containing a metal element is formed over the first and second regions; and a conductive region which electrically connects the first electrode and the conductive material is formed in the insulating film by diffusing the metal element into the first and second regions.

It is an object to form a conductive region between a front surface and a rear surface of an insulating film without forming contact holes in the insulating film. A method for manufacturing a semiconductor device is provided, in which an insulating film is formed over a semiconductor element and a first electrode electrically connected to the semiconductor element which are over a substrate, a first region having many defects is formed at a first depth in the insulating film by adding first ions into the insulating film at a first accelerating voltage; a second region having many defects is formed at a second depth which is different from the first depth in the insulating film by adding second ions into the insulating film at a second accelerating voltage which is different from the first accelerating voltage, a conductive material containing a metal element is formed over the first and second regions having many defects; and a conductive region which electrically connects the first electrode and the conductive material containing the metal element is formed in the insulating film by diffusing the metal element from the upper region to the lower region of the first and second regions having many defects.

Growing community of inventors

Kanagawa, Japan

Miki Suzuki