Toyoda Gosei Co., Ltd.

Kobe Steel, Ltd.

Kanagawa Academy of Science and Technology

Sumita Optical Glass, Inc.

Toyota Gosei Co., Ltd.

Acrorad Co., Ltd.

Miki Moriyama

Koichi Goshonoo

Shiro Yamazaki

Masanori Murakami

Satoshi Wada

Naoki Shibata

Seiji Nagai

Yasuhide Yakushi

Shohei Kumegawa

Kazuhiro Ito

Susumu Tsukimoto

Mikako Takeda

Takashi Onishi

Masao Mizuno

Taro Hitosugi

Tetsuya Hasegawa

Junpei Kasai

Tatsuya Kabe

Toshifumi Morita

Jun Ito

Hiroyuki Tajima

Shingo Totani

Koji Tasumi

Seiji Yamaguchi

Hiroki Watanabe

Kazuya Aida

Masashi Deguchi

Kosuke Yahata

Takayuki Sato

Masato Aoki

Masateru Yamazaki

Masaki Murakami

Yutaka Furubayashi

Tomohiro Sakai

Teppei Watanabe

Ippei Fujimoto

Tsutomu Sekine

Masahiro Shimada

Atsushi Kyan

Ryoichi Ohno

Yasushi Hirose

The present invention suppresses anomalous growth of a Group III nitride semiconductor at the periphery of a seed substrate. The invention is directed to a method for producing a Group III nitride semiconductor including feeding a nitrogen-containing gas into a molten mixture of a Group III metal and a flux placed in a furnace, to thereby grow a Group III nitride semiconductor on a seed substrate. The oxygen concentration of the furnace internal atmosphere is elevated after the growth initiation temperature of the Group III nitride semiconductor has been achieved. In a period from the initiation of the growth to a certain timing, the oxygen concentration of the furnace internal atmosphere is controlled to 0.02 ppm or less, and thereafter, to greater than 0.02 ppm and 0.1 ppm or less.

Method for producing a group III nitride semiconductor by controlling the oxygen concentration of the furnace internal atmosphere

The seed substrate comprises a base substrate and a base layer comprising a Group III nitride semiconductor formed on the base substrate, which has a high dislocation density region and a low dislocation density region. The planar pattern of the high dislocation density region is a honeycomb pattern. A hollow exists between the base substrate and the low dislocation density region. The object layer is grown through a flux method using the seed substrate. The high dislocation density region is melted back at an initial stage of crystal growth, and thereafter, the object layer is grown on the top surface of the low dislocation density region. A cavity remains between the high dislocation density region and the object layer. The presence of the cavity and the hollow makes easy to peel the object layer from the seed substrate.

Method for producing Group III nitride semiconductor, seed substrate and Group III nitride semiconductor crystal

To reduce ungrown region or abnormal grain growth region in growing a Group III nitride semiconductor through a flux method. A seed substrate has a structure in which a Group III nitride semiconductor layer is formed on a ground substrate as a base, and a mask is formed on the Group III nitride semiconductor layer. The mask has a plurality of dotted windows in an equilateral triangular lattice pattern. A Group III nitride semiconductor is grown through flux method on the seed substrate. Carbon is placed on a lid of a crucible holing the seed substrate and a molten mixture so that carbon is not contact with the molten mixture at the start of crystal growth. Thereby, carbon is gradually added to the molten mixture as time passes. Thus, ungrown region or abnormal grain growth region is reduced in the Group III nitride semiconductor crystal grown on the seed substrate.

Method for producing Group III nitride semiconductor including growing Group III nitride semiconductor through flux method

The present techniques provide a method for producing a Group III nitride semiconductor single crystal that is designed to grow a semiconductor single crystal with high reproducibility. The method for producing a Group III nitride semiconductor single crystal comprises adding a seed crystal substrate, Ga, and Na into a crucible, and growing a Group III nitride semiconductor single crystal. In the growth of the Group III nitride semiconductor single crystal, a measuring device is used to detect the reaction of Ga with Na. Ga is reacted with Na with the temperature of the crucible adjusted within a first temperature range of 80&#xb0; C. to 200&#xb0; C. After the measuring device detected the reaction of Ga with Na, the temperature of the crucible is elevated up to a growth temperature of the Group III nitride semiconductor single crystal.

Method for producing group III nitride semiconductor single crystal

An object of the present invention is to suppress macro step growth in the growth of GaN crystal through a flux method. As a crucible for holding a melt when growing a GaN crystal through the Na flux method, the crucible is made of alumina and produced by plaster mold casting. The crucible is used, in which there are alumina grains abnormally grown on the inner walls thereof, and the maximum grain size of the abnormally grown alumina grains is not less than 10 &#x3bc;m. When such a crucible is selected and used, the macro step growth can be suppressed, thereby improving the GaN crystal quality.

Method for producing group III nitride semiconductor using a crucible

The present invention provides a method for producing a Group III nitride semiconductor crystal and a GaN substrate, in which the transfer of dislocation density or the occurrence of cracks can be certainly reduced on a growth substrate, and the Group III nitride semiconductor crystal can be easily separated from a seed crystal. A mask layer is formed on a GaN substrate, to thereby form an exposed portion of the GaN substrate, and an unexposed portion of the GaN substrate. Through a flux method, a GaN layer is formed on the exposed portions of the GaN substrate in a molten mixture containing at least Group III metal and Na. At that time, non-crystal portions containing the components of the molten mixture are formed on the mask layer so as to be covered with the GaN layer grown on the GaN substrate and the mask layer.

Method for producing a group III nitride semiconductor crystal and method for producing a GaN substrate

The present invention provides a method for producing a Group III nitride semiconductor single crystal having excellent crystallinity, and a method for producing a GaN substrate having excellent crystallinity, the method including controlling melting back. Specifically, a mask layer is formed on a GaN substrate serving as a growth substrate. Then, a plurality of trenches which penetrate the mask layer and reach the GaN substrate are formed through photolithography. The obtained seed crystal and raw materials of a single crystal are fed to a crucible and subjected to treatment under pressurized and high temperature conditions. Portions of the GaN substrate exposed to the trenches undergo melting back with a flux. Through dissolution of the GaN substrate, the dimensions of the trenches increase, to provide large trenches. The GaN layer is grown from the surface of the mask layer as a starting point.

Method for producing a group III nitride semiconductor single crystal and method for producing a GaN substrate

The present invention provides a semiconductor crystal removal apparatus which realizes effective removal of a semiconductor crystal from a crucible through rapid melting of a solidified flux, and a method for producing a semiconductor crystal. The semiconductor crystal removal apparatus includes a crucible support for supporting a crucible so that the opening of the crucible is directed downward; a heater for heating the crucible supported on the crucible support; and a semiconductor crystal receiving net for receiving a semiconductor crystal falling from the opening of the crucible. The semiconductor crystal removal apparatus further includes a determination portion for determining removal of the semiconductor crystal on the basis of a change in weight through falling of the semiconductor crystal.

Semiconductor crystal removal apparatus and production method for semiconductor crystal

A method of manufacturing a light-emitting device including a light-emitting element mounted on a substrate and sealed with a glass. The method includes heating the glass by a first mold that is heated to a temperature higher than a yield point of the glass, the glass contacting the first mold, and pressing the glass against the light-emitting element mounted on the substrate supported by a second mold to seal the light-emitting element with the glass.

Method of manufacturing light-emitting device

A mask layer is formed on a Ga polarity surface of the GaN substrate as a growth substrate. Subsequently, a protective film PF is formed on a N polarity surface of the GaN substrate. Then, a plurality of concave portions is formed from the mask layer extending to the GaN substrate, to thereby form a seed crystal. The seed crystal is etched in a Na melt, and a plurality of concave portions having a facet plane exposed. The seed crystal and the raw materials are placed in a crucible, and the pressure and temperature inside the crucible are increased. Thus, a target GaN layer is grown in the upward direction on the surface of the mask layer and the lateral direction over the concave portions.

Method for etching a group III nitride semiconductor, method for producing a group III nitride semiconductor crystal, and method for producing a GaN substrate

Sample A is produced by sequentially forming a first insulating film of SiOand a reflective film on a sapphire substrate. Sample B is produced by sequentially forming a first insulating film of SiO, a reflective film, and a second insulating film of SiOon a sapphire substrate. In both samples A and B, the reflectance of the reflective film was measured at a wavelength of 450 nm before and after heat treatment. Heat treatment was performed at 600&#xb0; C. for three minutes. As shown in FIG., in Al/Ag/Al where Al has a thickness of 1 &#x212b; to 30 &#x212b;, Ag/Al where Al has a thickness of 20 &#x212b;, and Al/Ag/Al/Ag/Al where Al has a thickness of 20 &#x212b;, the reflectance was 95% or more, which is equivalent to or higher than that of Ag even after the heat treatment.

Method for producing group III nitride semiconductor light-emitting device

A light-emitting device includes a substrate, a light-emitting element mounted on a first flat surface of the substrate, and a glass sealing member for sealing the light-emitting element, wherein the sealing member is in contact with the first flat surface and a side surface of the substrate and a second flat surface of the surface opposite to the first flat surface is exposed.

Light-emitting device

Objects of the present invention are to provide a method for producing a Group III nitride semiconductor single crystal, which method enables production of a Group III nitride semiconductor single crystal having a flat surface by means of a crucible having any inside diameter; to provide a self-standing substrate obtained from the Group III nitride semiconductor single crystal; and to provide a semiconductor device employing the self-standing substrate. The production method includes adding the template, a flux, and semiconductor raw materials to a crucible and growing a Group III nitride semiconductor single crystal while the crucible is rotated. In the growth of the semiconductor single crystal, the crucible having an inside diameter R (mm) is rotated at a maximum rotation speed &#x3c9; (rpm) satisfying the following conditions:&#x3c9;1&#x2212;4&#x2266;&#x3c9;&#x2266;&#x3c9;1+4;&#x3c9;1=10; andlog()+3.1.

Group III nitride semiconductor single crystal, method for producing the same, self-standing substrate, and semiconductor device

The present invention provides a glass-sealed LED lamp which includes a mounting substrate, an LED chip mounted on the mounting substrate, a glass sealing body, and a glass bonding portion bonding the LED chip to a portion of a lower surface side of the glass sealing body. A clearance between a lower surface of the glass sealing body and an upper surface of the mounting substrate side, which causes total reflection at an interface between the glass sealing body and the clearance, is formed outward of the portion of the lower surface side of the glass sealing body.

Glass-sealed LED lamp and manufacturing method of the same

A method of manufacturing a LED lamp that is formed by sealing a LED element mounted on a substrate with glass, includes a mounting process for mounting the LED element on the substrate, a sealing member preparation process for preparing a glass sealing member that includes a concave portion being capable of housing the LED element, and a sealing process wherein the sealing member is arranged so that a forming surface of the concave portion faces the LED element, the sealing member is bonded to the substrate by thermal compression bonding, and the forming surface of the concave portion is made along the LED element.

Method of manufacturing LED lamp

Growing community of inventors

Kiyosu, Japan

Miki Moriyama