Sumitomo Electric Industries, Limited

Mitsui Minings & Melting Co., Ltd.

Sumitomo Electric Hardmetal Corp.

A.l.m.t. Corporation

Miki Miyanaga

Kenichi Watatani

Hideaki Awata

Koichi Sogabe

Hideki Moriguchi

Makoto Setoyama

Junya Okida

Shin-ichi Yamagata

Kenichi Kurisu

Sachiko Koike

Daiji Tabayashi

Kazuya Tokuda

Daisuke Kondo

Kei Hirai

Aiko Tominaga

Toru Maeda

Masayuki Ito

A composite material has a plate shape and has a first surface and a second surface. The second surface is opposite to the first surface. The composite material includes a plurality of first layers and at least one second layer. The first layers and the second layer are alternately layered along a thickness direction of the composite material such that the first layers are located at the first surface and the second surface. Each of the first layers is a layer including copper. The second layer is a layer of a molybdenum powder compact impregnated with copper. A compressive residual stress of 50 MPa or less acts on each of the first layer located at the first surface and the first layer located at the second surface.

Composite material, semiconductor package, and method of manufacturing composite material

The present invention relates to an oxide sintered material that can be used suitably as a sputtering target for forming an oxide semiconductor film using a sputtering method, a method of producing the oxide sintered material, a sputtering target including the oxide sintered material, and a method of producing a semiconductor deviceincluding an oxide semiconductor filmformed using the oxide sintered material.

Oxide sintered material, method of producing oxide sintered material, sputtering target, and method of producing semiconductor device

Provided is a semiconductor device including: a gate electrode; a channel layer arranged in a region directly below or directly above the gate electrode; a source and a drain electrodes arranged to be in contact with the channel layer; and a first insulating layer arranged between the gate electrode and the channel layer, the channel layer including a first oxide semiconductor, the source electrode and/or the drain electrode including a second oxide semiconductor, the first and second oxide semiconductors containing In, W and Zn, a content rate of W/(In+W+Zn) being higher than 0.001 atomic % and not higher than 8.0 atomic %, a content rate of Zn/(In+W+Zn) being from 1.2 atomic % to 40 atomic %, an atomic ratio of Zn to W being higher than 1.0 and lower than 20000. Also provided is a method for manufacturing the device.

Semiconductor device and method for manufacturing the same

Provided are: an oxide sintered material including an InOcrystal phase, a ZnInOcrystal phase and a ZnWOcrystal phase, wherein the roundness of crystal particles composed of the ZnWOcrystal phase is 0.01 or more and less than 0.7; a method for producing the oxide sintered material; and a method for manufacturing a semiconductor device including an oxide semiconductor film that is formed by using the oxide sintered material as a sputter target.

Oxide sintered material and method for manufacturing the same, sputtering target, and method for manufacturing semiconductor device

There are provided an oxide sintered material containing an InOcrystal phase, a ZnInOcrystal phase and a ZnWOcrystal phase, and a method of producing the oxide sintered material. The method includes forming the oxide sintered material by sintering a molded body containing In, W and Zn, and forming the oxide sintered material including placing the molded body at a first constant temperature selected from a temperature range of 500&#xb0; C. or more and 1000&#xb0; C. or less for 30 minutes or longer.

Oxide sintered material and method of manufacturing the same, sputtering target, and method of manufacturing semiconductor device

There is provided an oxide sintered body including indium, tungsten and zinc, wherein the oxide sintered body includes a bixbite type crystal phase as a main component and has an apparent density of higher than 6.6 g/cmand equal to or lower than 7.5 g/cm, a content rate of tungsten to a total of indium, tungsten and zinc in the oxide sintered body is higher than 0.5 atomic % and equal to or lower than 5.0 atomic %, a content rate of zinc to the total of indium, tungsten and zinc in the oxide sintered body is equal to or higher than 1.2 atomic % and equal to or lower than 19 atomic %, and an atomic ratio of zinc to tungsten is higher than 1.0 and lower than 60. There are also provided a sputtering target including this oxide sintered body, and a semiconductor device.

Oxide sintered body and method for manufacturing the same, sputtering target, and semiconductor device

There is provided an oxide sintered material containing indium, tungsten, and zinc, the oxide sintered material including: a first crystal phase that is a main component of the oxide sintered material and includes a bixbyite type crystal phase; and a second crystal phase having a content of the zinc higher than a content of the zinc in the first crystal phase, the second crystal phase including particles having an average major axis size of not less than 3 &#x3bc;m and not more than 50 &#x3bc;m and having an average aspect ratio of not less than 4 and not more than 50.

There is provided an oxide sintered body including indium, tungsten and zinc, wherein the oxide sintered body includes a bixbite type crystal phase as a main component and has an apparent density of higher than 6.5 g/cmand equal to or lower than 7.1 g/cm, a content rate of tungsten to a total of indium, tungsten and zinc is higher than 1.2 atomic % and lower than 30 atomic %, and a content rate of zinc to the total of indium, tungsten and zinc is higher than 1.2 atomic % and lower than 30 atomic %. There are also provided a sputtering target including this oxide sintered body, and a semiconductor device including an oxide semiconductor film formed by a sputtering method by using the sputtering target.

There is provided an oxide semiconductor film composed of nanocrystalline oxide or amorphous oxide, wherein the oxide semiconductor film includes indium, tungsten and zinc, a content rate of tungsten to a total of indium, tungsten and zinc in the oxide semiconductor film is higher than 0.5 atomic % and equal to or lower than 5 atomic %, and an electric resistivity is equal to or higher than 10&#x3a9;cm. There is also provided a semiconductor device including the oxide semiconductor film.

Oxide semiconductor film including indium, tungsten and zinc and thin film transistor device

There is provided an oxide sintered body including indium, tungsten, and at least one of zinc and tin, wherein the oxide sintered body includes, as a crystal phase, a complex oxide crystal phase including tungsten and at least one of zinc and tin. There is also provided a semiconductor device including an oxide semiconductor film formed by a sputtering method by using the oxide sintered body as a target.

Oxide sintered body and semiconductor device

A surface-coated cutting tool of the present invention includes a substrate and a coated layer formed on the substrate, and the coated layer is a physical-vapor-deposition layer having a thickness of 10 &#x3bc;m or more. A surface region having a thickness of 1 &#x3bc;m from a surface of the coated layer includes a first region whose integrated residual stress is a compressive stress and a second region whose integrated residual stress is a tensile stress, and the integrated residual stress of the surface region falls within the range of &#x2212;1.5 to 1.5 GPa in any region included in the surface region.

Growing community of inventors

Itami, Japan

Miki Miyanaga