Sony Corporation

Sony Semiconductor Solutions Corporation

Sony Group Corporation

Miki Kimijima

Toshio Nishi

Yosuke Murakami

Takahiro Ohe

Masato Kanno

Sae Miyaji

Naoki Uchino

Yosuke Saito

Hideaki Mogi

Yuta Hasegawa

Takashi Kawashima

Hajime Kobayashi

Yu Kato

Shinnosuke Hattori

Yuta Inaba

A photoelectric conversion element according to an embodiment of the present disclosure includes: a first electrode; a second electrode disposed to be opposed to the first electrode; and an organic photoelectric conversion layer provided between the first electrode and the second electrode. The organic photoelectric conversion layer has a domain of one organic semiconductor material therein. The domain of the one organic semiconductor material has a percolation structure in which the domain vertically extends in the organic photoelectric conversion layer in a film-thickness direction, and has a smaller domain length in a plane direction of the organic photoelectric conversion layer than a domain length in the film-thickness direction of the organic photoelectric conversion layer.

Photoelectric conversion element and solid-state imaging device

To provide a photoelectric conversion element capable of further improving performance in a photoelectric conversion element using an organic semiconductor material. The photoelectric conversion element includes a first electrode and a second electrode arranged to face each other, and a photoelectric conversion layerprovided between the first electrode and the second electrode, in which the photoelectric conversion layerincludes a first organic semiconductor material and a second organic semiconductor material, and at least one of the first organic semiconductor material or the second organic semiconductor material is an organic molecule having a HOMO volume fraction of 0.15 or less or a LUMO volume fraction of 0.15 or less.

Photoelectric conversion element

[Problem] Provided are a photoelectric conversion device and an imaging apparatus capable of improving quantum efficiency and a response speed. [Solving means] A first photoelectric conversion device according to one embodiment of the present disclosure includes a first electrode, a second electrode opposed to the first electrode, and a photoelectric conversion layer. The photoelectric conversion layer is provided between the first electrode and the second electrode and includes at least one type of one organic semiconductor material having crystallinity. Variation in a ratio between horizontally-oriented crystal and vertically-oriented crystal in the photoelectric conversion layer is three times or less between a case where film formation of the one organic semiconductor material is performed at a first temperature and a case where the film formation of the one organic semiconductor material is performed at a second temperature. The second temperature is higher than the first temperature.

Photoelectric conversion device and imaging apparatus

The present invention provides a method for forming a semiconductor thin film, which is capable of suppressing decrease in mobility due to heating and characteristic deterioration due to the decrease in mobility and which is capable of forming a semiconductor thin film with improved heat resistance by more simple procedures. A solution in which a plurality of types of organic materials including an organic semiconductor material are mixed is applied or printed on a substrate to form a thin film, and the plurality of types of organic materials are phase-separated by a process of drying the thin film. As a result, a layered structure semiconductor thin film is obtained, in which an intermediate layer b composed of an organic insulating material is sandwiched between two semiconductor layers a and a'.

Method for forming semiconductor thin film and method for manufacturing thin-film semiconductor device

A semiconductor thin film () that is laminated on a gate electrode () with a gate insulation film () therebetween is included. The semiconductor thin film () has a layered structure and includes at least two semiconductor layers (a, a'). In the semiconductor thin film (), for example, an intermediate layer (b) composed of a material different from the two semiconductor layers (a, a&#x2032;) is sandwiched between the semiconductor layers (a, a&#x2032;). The two semiconductor layers (a, a&#x2032;) are composed of an identical material and the intermediate layer (b) is composed of an insulation material. A material constituting such a layered structure is composed of an organic material. Thus, a thin-film semiconductor device and a field-effect transistor in which a decrease in the mobility caused by heating and degradation of characteristics caused by the decrease can be suppressed and the heat resistance is enhanced are provided.

Thin-film semiconductor device and field-effect transistor

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Tokyo, Japan

Miki Kimijima