Mitsubishi Electric Corporation

Miki Kagano

Tomokazu Ogomi

Kazuya Makabe

Toshiaki Shoji

Hideki Matsui

Hiroshi Araki

Hiroyuki Asano

Masaaki Okada

Kenji Shimohata

Tomoyuki Miyata

Takashi Ito

Takeshi Musha

Jin Inoue

Tadashi Minobe

Takahito Nakanishi

Takeshi Kishimoto

Masashi Hino

A bias current circuit includes: an N-type MOSFET in which a gate terminal and a drain terminal are connected to a current source, and N-type MOSFETs in which respective drain terminals are connected to respective bias current output terminals and source terminals are grounded. The bias current circuit further includes: an N-type MOSFET in which one terminal type, either a drain terminal or a source terminal, is connected to the gate terminal of the N-type MOSFET, and the other terminal type is connected to the gate terminals of the N-type MOSFETs, and an N-type MOSFET in which a drain terminal is connected to the gate terminals of the N-type MOSFETs and a source terminal is grounded. A control signal, that is LOW when the bias current is supplied and is HIGH when the bias current is not supplied, is input to the gate terminal of the N-type MOSFET, and an inverse signal of the control signal is input to the gate terminal of the N-type MOSFET.

Bias current circuit, signal processing device, and bias current control method

A capacitance detection device includes a first electrode and a second electrode that at least partially face each other on opposite sides of a transfer path. An oscillator circuit forms an electric field between the first electrode and the second electrode. A detection circuit detects a change in capacitance between the first electrode and the second electrode. At least one of the oscillator circuit and the detection circuit is included in each of a first board and a second board. The first board is disposed such that a side surface of the first board faces the first electrode in an electric field direction, and the second board is disposed such that a side surface of the second board faces the second electrode in the electric field direction.

Capacitance detection device and image reading device

A magnetic field generator disposed on one surface side of a sheet-shaped object-to-be-detected contains a magnetic component. The magnetic field generator includes a first magnetic pole part that forms a first magnetic pole, and a second magnetic pole part that forms a second magnetic pole with reverse polarity of the first magnetic pole. The magnetic field generator generates a cross magnetic field that crosses the object-to-be-detected. An MR element is disposed between the first magnetic pole part and the object-to-be-detected. The resistance value of the MR element changes according to a change in a component of the cross magnetic field in a conveying direction. The position of the MR element in the conveying direction is position shifted along the conveying direction from the center position of the first magnetic pole part in the conveying direction, and located between both ends of the first magnetic pole part in the conveying direction.

Magnetic sensor device

When a switch is set to off, and a switch is set to on, the voltage of a SigOut terminal is stabilized with a reference voltage, and a bias voltage is applied to a capacitor. Changing the switch from on to off, with the bias voltage retained in the capacitor, a detection signal which is input via a SigIn terminal is amplified with the reference voltage as a reference, and an amplified signal is output from the SigOut terminal.

Amplifier and signal processing device

A magnetic sensor device includes a first magnet and a second magnet that are disposed on mutually opposing sides of a conveyance path, and one of poles of the first magnet faces an opposite pole of the second magnet. The first magnet and the second magnet generate a cross magnetic field whose strength in a spacing direction, which is orthogonal to a conveying direction, is within a predetermined range. An AMR element is located in a magnetic field in which the strength of the cross magnetic field in the spacing direction is within a predetermined range, and detects, as change in a resistance value, change in the cross magnetic field caused by an object to be detected. A multilayer board outputs the change in the resistance value detected by the AMR element to a processing circuit.

Growing community of inventors

Chiyoda-ku, Japan

Miki Kagano