Nxp B.v.

Mikhail Yurievich Semenov

Gijs Jan De Raad

Yury Vladimirovich Alymov

Elena Valentinovna Somova

Electrostatic discharge protection circuitry includes a transistor pass-gate coupled between potential source of electrostatic discharge-driven current ('ESD current') and an input node of a circuit block is configured provide a sufficiently resistive current path between a first current terminal and a second current terminal of the pass gate such that, when an amount of charge sufficient to cause an ESD event accumulates at the potential ESD current source, a sufficient voltage drop occurs across the pass gate such that devices coupled to the input node of the circuit block are protected from experiencing a voltage drop across them that is above a predetermined threshold voltage.

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Zelenograd, Russia

Mikhail Yurievich Semenov