Applied Materials, Inc.

Mikhail Taraboukhine

Kiyki-Shiy N Shang

Paul Zachary Wirth

Michael D Willwerth

Leonard Michael Tedeschi

Oleg V Serebryanov

Yaoling Pan

Patrick John Tae

Alexander Goldin

Charles Hardy

Vilen K Nestorov

Sivasankar Nagarajan

Venkata Raghavaiah Chowdhary Kode

A direct current (DC) power is supplied to a heating element embedded into a substrate support assembly (SSA). A voltage across the heating element and a current through the heating element is measured as the DC power is supplied to the heating element. A resistance of the heating element is determined based on the measured voltage and current. A temperature measurement for the heating element and/or a zone including the heating element is obtained based on signal(s) of a temperature sensor. A temperature model is updated based on the determined resistance and the obtained temperature measurement. The heating element embedded in the SSA and/or an additional heating element embedded in the SSA or in another SSA is controlled based on the updated temperature model during a substrate process.

Methods and systems for temperature control for a substrate

Embodiments disclosed herein include a method of calibrating a tool for converting photonic signals to electrical signals. In an embodiment, the method comprises connecting a calibration module to a calibrated current source, finding a transfer function for a plurality of modes with the calibration module, and storing the transfer functions in a lookup table.

Algorithm for accurately converting a wide range of photo signals into an electrical current

A direct current (DC) power is supplied to heating elements embedded in zones of a substrate support assembly (SSA) of a processing chamber. A determination is made, based on a voltage measured across the heating elements and a current measured through the heating elements as the DC power is supplied to the heating elements, that the temperature of the SSA does not satisfy a temperature condition. A zone of the SSA that is at a temperature that does not correspond to a target temperature for the zone based on the temperature condition is identified based on the measured voltage and the measured current. The DC power supplied to the heating elements embedded within the identified zone is modified to cause the temperature of the zone to be modified to the target temperature and the temperature of the substrate support assembly to satisfy the temperature condition.

Implementations disclosed describe an integrated sensor controller comprising a sensor circuit and a logic circuit. The sensor circuit includes a light source driver to generate a driving signal, a demultiplexer to produce, using the driving signal, a plurality of output driving signals to be delivered to one of a plurality of sensors, and an amplifier to: receive a first signal from a first sensor, the first signal being associated with a first event representative of a position of a substrate within a device manufacturing machine, and generate a second signal. The sensor circuit further includes an analog-to-digital converter to receive the second signal and generate a third signal. The logic circuit includes a memory device and a processing device coupled to the memory device, the processing device to obtain based on the third signal, information about the position of the substrate.

Multiplexing control of multiple positional sensors in device manufacturing machines

A method for controlling a temperature of a substrate support assembly is provided. A first direct current (DC) power is supplied to a heating element embedded in a zone of the substrate support assembly included in a processing chamber. A voltage is measured across the heating element. Similarly, a current is measured through the heating element. A temperature of the zone of the substrate support assembly is determined based on the voltage across the heating element and the current through the heating element. A temperature difference between the determined temperature of the zone and a target temperature for the zone is determined. A second DC power to deliver to the heating element is determined to achieve the target temperature based at least in part on the temperature difference. The second DC power is supplied to the heating element to cause the temperature of the zone to be modified to the target temperature.

Capacitive sensors and capacitive sensing data integration for plasma chamber condition monitoring are described. In an example, a plasma chamber monitoring system includes a plurality of capacitive sensors, a capacitance digital converter, and an applied process server coupled to the capacitance digital converter, the applied process server including a system software. The capacitance digital converter includes an isolation interface coupled to the plurality of capacitive sensors, a power supply coupled to the isolation interface, a field-programmable gate-array firmware coupled to the isolation interface, and an application-specific integrated circuit coupled to the field-programmable gate-array firmware.

Capacitive sensing data integration for plasma chamber condition monitoring

A method for precise endpoint detection during etch processing of a substrate based on adaptive filtering of the optical emission spectrum (OES) data, even in low open area etching, is provided. Endpoint detection performed in this manner offers the benefits of increased signal-to-noise ratio and decreased computation costs and delay when compared to conventional endpoint detection techniques.

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Santa Clara, CA, United States of America

Mikhail Taraboukhine