Skyworks Solutions, Inc.

Fairchild Semiconductor Corporation

Triquint Semiconductor Corporation

Mikhail Shirokov

Steven Christopher Sprinkle

Dima Prikhodko

Gene A Tkachenko

Sergey Nabokin

Jason Chiesa

Jerod F Mason

Richard A Carter

John Pessia

Steven P Matte

Atiqul Baree

Robert Aigner

Gernot G Fattinger

Gary Hau

John A DeFalco

James A Roche, Jr

Jun C Jadormio

Grant A Small

A switch element includes a switch device having a drain, a source and a plurality of gates, and at least one additional interconnect located between the plurality of gates, the additional interconnect operative to establish a constant potential between the at least two gates.

Compact switch with enhanced linearity performance

An RF system includes a power amplifier with output impedance and a BAW filter with an input impedance and output impedance. A matching network includes an inductance connecting the power amplifier to the BAW filter and an impedance transformation ratio of at least 1:10 is provided at the output impedance of the power amplifier to the output impedance of the BAW filter.

Power amplifier matching RF system and method using bulk acoustics wave device

Compact low loss high frequency switch with improved linearity performance

A circuit having a substrate, a generator with a field effect transistor (FET) portion and a heterojunction bipolar transistor (HBT) portion integrated in the substrate, a voltage-to-voltage conveyor integrated in the substrate, a bias circuit, and a power amplifier is disclosed.

Voltage regulator circuit

According to one exemplary embodiment, a low harmonic switching device includes a first switching block including a first multi-gate FET, where the first switching block is coupled to a first input and a shared output of the low harmonic switching device. A first capacitor is coupled between a first gate and a source of the first multi-gate FET and a second capacitor is coupled between a second gate and a drain of the first multi-gate FET so as to cause a reduction in a harmonic amplitude in the shared output. A resistor can couple the source to the drain of the first multi-gate FET. The first switching block can further include a second multi-gate FET, where a source of the second multi-gate FET is coupled to the drain of the first multi-gate FET and a drain of the second multi-gate FET is coupled to the shared output.

High-frequency switching device with reduced harmonics

A voltage regulator integrated with a monolithic microwave integrated circuit (MMIC) power amplifier that supplies a regulated bias current to the MMIC power amplifier that is compensated for temperature and voltage supply variations. The regulator circuit includes HBT transistors for current mirrors and a voltage regulator where a base-emitter voltage drop compensates for a similar base emitter drop in the current mirrors. The regulator circuit is designed to maintain constant the bias voltage and mirror currents with changes in Vcc and temperature. The compensated constant bias current to the MMIC power amplifier maintains uniform operating parameters for the power amplifier.

Temperature compensated voltage regulator integrated with MMIC's

A power amplifier includes an input network, output stages, coupled in parallel and configured to output power optimally in corresponding power-ranges, the output stages coupled to the input network, an output impedance matching network, coupled to the output stages and not containing a switching element, and a bias-control network, coupled between the output impedance matching network, the input network, and the output stages. In some amplifiers the output impedance matching network does not contain a switching element corresponding to the output stage configured to output power in the highest range. In other amplifiers the bias-control network is configured to isolate output stages by providing a hard shut-off to transistors of the isolated output stages.

Multi-mode power amplifier

A switchable amplifier circuit having a current mirror. The mirror includes: a first current source for producing a reference current; an output transistor having an input electrode and an output electrode; and a current gain device connected between an output of the first current source and the input electrode of the output transistor. A bias current is produced through the output electrode of the output transistor, such bias current being a function of the reference current produced by the first current source. A second current source has an output coupled to an input of the current gain device. The second current source provides a current which is a fraction of the reference current. A switching transistor has an output electrode coupled to: (1) an input of the current gain device; and, (2) an output of the second current source. The switching transistor: (1) sinks the current from the second current source in response to an input signal fed to such switching transistor inhibiting current from the second current source to pass to the current gain device and thereby remove the bias current for the output transistor driving the output transistor to a non-conducting condition; or (2) enables the current from the second current source to pass to the current gain device in response to the input signal fed to such switching transistor driving the output transistor to a conducting condition.

Switchable amplifier circuit having reduced shutdown current

Growing community of inventors

Methuen, MA, United States of America

Mikhail Shirokov