Turun Yliopisto

Sisusemi Oy

Mikhail Kuzmin

Pekka Laukkanen

Marko Punkkinen

Marjukka Tuominen

Jaakko Mäkelä

Kalevi Kokko

Johnny Dahl

Veikko Tuominen

Antti Lahti

Juha-Pekka Lehtiö

Yasir Muhammad

A method for forming a semiconductor structure comprising a silicon-on-insulator layer structure with crystalline silicon oxide SiOas the insulator material comprises: providing a crystalline silicon substrate having a substantially clean deposition surface in a vacuum chamber; heating the silicon substrate to an oxidation temperature Tin the range of 550 to 1200 ° C.; supplying, while keeping the silicon substrate in the oxidation temperature, with an oxidation pressure Pin the range of 1·10to 1·10mbar in the vacuum chamber, molecular oxygen Ointo the vacuum chamber with an oxygen dose Din the range of 0.1 to 1000 Langmuir; whereby a crystalline silicon oxide layer with a thickness of at least two molecular layers is formed within the silicon substrate, between a crystalline silicon base layer and a crystalline silicon top layer. Related semiconductor structures are described.

Silicon-on-insulator with crystalline silicon oxide

A method for forming a foreign oxide or foreign nitride layer () on a substrate () of a semiconductor comprises providing a semiconductor substrate () having an oxidized or nitridized surface layer (), supplying a foreign element () on the oxidized or nitridized surface layer; and keeping the oxidized or nitridized surface layer () at an elevated temperature so as to oxidize or nitridize at least partially the foreign element by the oxygen or nitrogen, respectively, initially present in the oxidized or nitridized surface layer ().

Manufacturing of foreign oxide or foreign nitride on semiconductor

A method () for forming a semiconductor structure () comprising a silicon-on-insulator layer structure with crystalline silicon oxide SiOas the insulator material comprises: providing () a crystalline silicon substrate () having a substantially clean deposition surface () in a vacuum chamber; heating () the silicon substrate to an oxidation temperature To in the range of 550 to 1200, 550 to 1000, or 550 to 850&#xb0; C.; supplying (), while keeping the silicon substrate in the oxidation temperature, with an oxidation pressure Po in the range of 1&#xb7;10to 1&#xb7;10mbar in the vacuum chamber, molecular oxygen Ointo the vacuum chamber with an oxygen dose Din the range of 0.1 to 1000 Langmuir; whereby a crystalline silicon oxide layer () with a thickness of at least two molecular layers is formed within the silicon substrate, between a crystalline silicon base layer () and a crystalline silicon top layer ().

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St. Petersburg, Russia

Mikhail Kuzmin