Asm America, Inc.

Asm IP Holding B.v.

3dam Technologies, Llc/3dam Holdings, LLC

Johnson, Wayne, L.

Mike Halpin

Eric James Shero

Carl Louis White

Todd Robert Dunn

Loren R Jacobs

Ravinder K Aggarwal

Kyle Fondurulia

Sokol Ibrani

Matt G Goodman

Dave Marquardt

Fred Pettinger

Ivo Johannes Raaijmakers

Mark R Hawkins

Herbert Terhorst

Robert Michael Vyne

Paul D Brabant

Jerry Winkler

Tony J Keeton

Joseph P Italiano

Armand Ferro

Bob Haro

Gregory M Bartlett

Lee Haen

Jereon Stoutyesdijk

Andy Yednak

Buz Darabnia

Wayne L Johnson

Dennis L Goodwin

John F Wengert

Eric R Wood

Michael J Meyer

Eric Alan Barrett

Ken O'Neill

Jim Alexander

Frank Van Bilsen

Blake Samuels

Lawrence Murr

Patrick Franz

Jeroen Stoutyesdijk

Matt Goodman

Bobby Vyne

Embodiments related to managing the process feed conditions for a semiconductor process module are provided. In one example, a gas channel plate for a semiconductor process module is provided. The example gas channel plate includes a heat exchange surface including a plurality of heat exchange structures separated from one another by intervening gaps. The example gas channel plate also includes a heat exchange fluid director plate support surface for supporting a heat exchange fluid director plate above the plurality of heat exchange structures so that at least a portion of the plurality of heat exchange structures are spaced from the heat exchange fluid director plate.

Process feed management for semiconductor substrate processing

Apparatus and methods are described for performing additive manufacturing. The apparatus includes a vacuum chamber for fabricating a workpiece composed of deposited metal, a table positioned within the vacuum chamber, and configured to support fabrication of the workpiece on a substrate, and one or more multiple droplet emitters coupled to the vacuum chamber, and arranged to irradiate the workpiece with a stream of molten metal droplets during fabrication.

Systems and methods for depositing charged metal droplets onto a workpiece

A vapor deposition device includes a reactor including a reaction chamber and an injector for injecting vapor into the reaction chamber. The device also includes a manifold for delivering vapor to the injector. The manifold includes a manifold body having an internal bore, a first distribution channel disposed within the body in a plane intersecting the longitudinal axis of the bore, and a plurality of supply channels disposed within the body and in flow communication with the first distribution channel and with the bore. Each of the first supply channels is disposed at an acute angle with respect to the longitudinal axis of the bore, and each of the supply channels connects with the bore at a different angular position about the longitudinal axis. The distribution channel (and thus, the supply channels) can be connected with a common reactant source. Related deposition methods are also described.

Pulsed valve manifold for atomic layer deposition

A thermocouple for use in a semiconductor processing reaction is described. The thermocouple includes a sheath having a measuring tip and an opening at the opposing end. A support member that receives a portion of a first wire and a second wire is received within the sheath. The first and second wires form a junction that contacts the inner surface of the sheath at the measuring tip. A spacing member is secured at the opening of the sheath and receives the support member. The spacing member allows the support member, first wire, and second wire to freely thermally expand relative to each other without introducing compression or tension stresses therein.

Thermocouple

A substrate support system comprises a substrate holder having a plurality of passages extending between top and bottom surfaces thereof. The substrate holder supports a peripheral portion of the substrate backside so that a thin gap is formed between the substrate and the substrate holder. A hollow support member provides support to an underside of, and is configured to convey gas upward into one or more of the passages of, the substrate holder. The upwardly conveyed gas flows into the gap between the substrate and the substrate holder. Depending upon the embodiment, the gas then flows either outward and upward around the substrate edge (to inhibit backside deposition of reactant gases above the substrate) or downward through passages of the substrate holder, if any, that do not lead back into the hollow support member (to inhibit autodoping by sweeping out-diffused dopant atoms away from the substrate backside).

Substrate support system for reduced autodoping and backside deposition

A thermocouple having a support tube configured to receive a pair of wires of dissimilar metals. The pair of wires of the thermocouple connected at a junction adjacent to one end of the support tube. The thermocouple further including a cap attached to the opposing end of the support tube, wherein the cap receives the free ends of the pair of wires. The cap allowing the pair of wires to translate freely therethrough to accommodate the difference in thermal expansion and contraction of the pair of wires relative to the thermal expansion and contraction of the support tube.

A generally horizontally-oriented quartz CVD chamber is disclosed with front and rear chamber divider plates adjacent a centrally positioned susceptor and surrounding temperature control ring which divide the chamber into upper and lower regions. Improvement to the lifetime of CVD process components and related throughput improvements are disclosed. A getter plate for attracting some of the unused reactant gas is positioned downstream from the susceptor extending generally parallel to and spaced between the divider plate and the upper chamber wall. This getter plate also minimizes deposition on the chamber walls and improves the efficiency of a cleaning step. Reradiating elements are also located adjacent side walls of the chamber to heat cooler chamber wall areas. The getter plate and the reradiating elements plus the susceptor and surrounding ring are all made of solid chemical vapor deposited SiC to improve the life of the chamber. Also, thermocouples adjacent the susceptor are provided with SiC sheaths to enable the thermocouples to withstand more process cycles than that of quartz sheaths. SiC shields may be provided on quartz components throughout the chamber to protect the quartz from devitrification. Throughput is improved by both reducing down time and reducing the cleaning step time of the process cycle.

Long life high temperature process chamber

A system for facilitating wafer transfer comprises a susceptor unit consisting of an inner susceptor section which rests within an outer susceptor section. A vertically movable and rotatable support spider located beneath the susceptor unit can rotate into positions to engage either the inner or the outer susceptor sections. When the inner section is engaged, the support spider lifts the inner section vertically out of the outer section. When the outer section is engaged, the support spider raises and lowers the entire susceptor unit. A fork type robotic arm end effector permits wafer pick up and unloading by the inner susceptor section.

Substrate transfer system for semiconductor processing equipment

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Scottsdale, AZ, United States of America

Mike Halpin