Northrop Grumman Systems Corporation

Northrop Grumman Space & Mission Systems Corporation

Mike Barsky

Jennifer Wang

Po-Hsin Liu

Weidong Liu

Jane Lee

Wayne Yoshida

Linh Dang

Rich Lai

Huai-Min Sheng

Gerry Mei

In a method of forming a semiconductor device on a semiconductor substrate (), a photoresist layer () is deposited on the semiconductor substrate; a window () is formed in the photoresist layer () by electron beam lithography; a conformal layer () is deposited on the photoresist layer () and in the window (); and substantially all of the conformal layer () is selectively removed from the photoresist layer () and a bottom portion of the window to form dielectric sidewalls () in the window ().

High electron mobility transistor semiconductor device and fabrication method thereof

Accordingly, this invention relates to an dry etching process for semiconductor wafers. More particularly, the present invention discloses a dry etching process including a halogen etchant () and a nitrogen gas () that selectively etches a compound semiconductor material () faster than the front-side metal layers (A)(B). Further, the dry etching process produces a vertical wall profile on compound semiconductor material () in both X () and Y () crystalline directions without undercutting the top of a via-opening.

Dry etching process for compound semiconductors

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Sherman Oaks, CA, United States of America

Mike Barsky