Infineon Technologies Ag

Siemens Aktiengesellschaft

Kabushiki Kaisha Toshiba

Mike A Killian

Oliver Kiehl

Thomas Vogelsang

Gerhard Mueller

Gerd Frankowsky

Hartmud Terletzki

Harald Streif

Ernst Stahl

Manfred Reithinger

Martin Brox

Thilo Schaffroth

Naokazu Miyawaki

Franz Freimuth

Stefan Wuensche

Wolfgang H Krautschneider

A memory device () includes an array () of memory cells arranged in rows and columns. Preferably, each memory cell includes a pass transistor coupled to a storage capacitor. A row decoder () is coupled to rows of memory cells while a column decoder () is coupled to columns of the memory cells. The column decoder () includes an enable input. A variable delay () has an output coupled to the enable input of the column decoder (). The variable delay () receives an indication (R/W') of whether a current cycle is a read cycle or a write cycle. In the preferred embodiment, a signal provided at the output of the variable delay () is delayed if the current cycle is a read cycle compared to if the current cycle is a write cycle.

Memory device with column select being variably delayed

A semiconductor packaging arrangement, or module, includes a printed circuit board having an electrical interconnect thereon and a semiconductor package mounted to the printed circuit board. The semiconductor package includes a fractional portion of a semiconductor wafer having a plurality of integrated circuit chips thereon, such chips being separated by regions in the fractional portion of the wafer. The fractional portion of the wafer has a plurality of electrical contacts electrically connected to the chips. The package also includes a dielectric member having an electrical conductor thereon. The electrical conductor are electrically connected to the plurality of electrical contacts of the plurality of chips to electrically interconnect such plurality of chips with portions of the electrical conductor spanning the regions in the fractional portion of the wafer. A connector is provided for electrically connecting the electrical conductor of the package to the electrical interconnect of the printed circuit board.

Multiple chip semiconductor arrangement having electrical components in separating regions

A memory device () includes an array () of memory cells arranged in rows and columns. Preferably, each memory cell includes a pass transistor coupled to a storage capacitor. A row decoder is coupled to rows of memory cells while a column decoder () is coupled to columns of the memory cells. The column decoder () includes an enable input. A variable delay () has an output coupled to the enable input of the column decoder (). The variable delay () receives an indication (R/W') of whether a current cycle is a read cycle or a write cycle. In the preferred embodiment, a signal provided at the output of the variable delay () is delayed if the current cycle is a read cycle compared to if the current cycle is a write cycle.

System and method for detecting a reference signal. A preferred embodiment comprises a latch (such as the latch) and a filter (such as the filter). The latch tracks a reference signal at its input and reflects the reference signal at its output. The filter can be coupled to the output of the latch and may inject a delay to help eliminate the effects of glitches and noise. When the reference signal reaches a specified value, a control signal from the filter causes the latch to store the reference signal. A delay imparted by the filter ensures that the latch does not store the reference signal until a finite amount of time after the reference signal reaches the specified value.

Reference voltage detector for power-on sequence in a memory

Semiconductor package and method

A circuit embodying the invention includes a gating circuit responsive to a first control signal and to a second externally supplied control signal having an active state and an inactive state. The first control signal is produced by a power supply circuit which is responsive to the application of an externally supplied operating voltage for producing an 'internal' operating voltage and which produces the first control signal having an active state when the internal operating voltage reaches a predetermined value. The gating circuit has an output for producing a third control signal which is enabling only if the second control signal goes from its inactive state to its active state when the first control signal is already in, and remains in, its active state. The gating circuit prevents a chip from operating in an unintended mode at power-up.

Apparatus for controlling circuit response during power-up

In order to restrict the voltage across the gate oxide of an input pass-through transistor which operates as an input signal source to a MOS inverter, a MOS transistor wired as a MOS diode is connected between the source and gate electrode of the pass-through transistor. The diode connected transistor allows the use of a thin oxide device for the pass-through transistor which enables a high transconductance device to be employed while restricting the voltage across the gate oxide of the pass-through transistor to an acceptable value.

Protection apparatus for series pass MOSFETS

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Burlington, VT, United States of America

Mike A Killian